Magnetoresistance and electronic structure of asymmetric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mo>/</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</

Makarovskii, O. N.; Smrčka, L.; Vašek, P.; Jungwirth, T.; Cukr, M.; Jansen, L.

doi:10.1103/physrevb.62.10908

Cited by 19 publications

(19 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Magneto-optical measurements of similar structures have been reported by Folkes et al 13 However, their sample has a 50 Å AlGaAs barrier between SQW and SHJ such that two quantum wells do not have a strong tunnel split feature and hence no ⌬ SAS . Magnetotransport measurements of similar structures have also been reported by Makarovskii et al 14 The experimental conditions for the dc and pulsed field PL studies are understandably slightly different. For our a͒ Author to whom correspondence should be addressed.…”

Section: Softening Of the Tunneling Gap In Modulation-doped Gaas/algamentioning

confidence: 70%

Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields

Shin

Park

Perry

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Section: Softening Of the Tunneling Gap In Modulation-doped Gaas/algamentioning

confidence: 70%

Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields

Shin

Park

Perry

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…In the resonant regime, when a magnetic field B is applied parallel to the current I, oscillations have been reported in the I(B) curves [10][11][12][13][14][15], from which the charge buildup in the well and the dimensionality (2D or 3D) of the emitter can be deduced. Theoretical models for this regime have been published [16,17].…”

Section: Introductionmentioning

confidence: 99%

Magnetotunneling in GaAs/AlxGa1-xAs Double Barrier Heterostructures with and without On-Center-Well Impurity Planes

Gutiérrez

Latgé

Porras‐Montenegro

2002

phys. stat. sol. (b)

View full text Add to dashboard Cite

By means of the diagrammatic techniques for nonequilibrium processes proposed by Keldysh and adopting a simple one-band tight-binding Hamiltonian, we study the resonant tunneling in GaAs/ Al x Ga 1 À x As double-barrier heterostructures (DBH) in the presence of a magnetic field applied parallel to the current direction in this work. We have found that the number of Landau levels that contribute to the resonant tunneling diminishes with the magnetic field, all centered around the position of the resonance. Also, we have calculated the conductance versus bias voltage and we have found that the maxima and minima of the conductance move towards higher bias with the magnetic field in good agreement with experimental reports. We have considered the effects of isoelectronic impurity-planes localized at the well region on the J-V characteristics of the system and on the conductance versus voltage. The presence of the impurity-plane induces a shift to higher (lower) energies of the density of states, of the J-V characteristic curves and of the conductance versus voltage, corresponding to a repulsive (attractive) potential.

show abstract

“…E i,σ (k x ) are the spin-dependent xz-plane eigenenergies. We notice that in the general case, E i,σ (k x ) must be self-consistently calculated [7,5,6,8]. Equation (1) is valid for any type of interplay between spatial and magnetic confinement i.e.…”

Section: Theorymentioning

confidence: 99%

Spin polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states

Simserides¹

2005

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Abstract. We study the magnetization, M , and the spin polarization, ζ, of n-doped nonmagnetic-semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / ndoped NMS quantum wells, as a function of the temperature, T , and the in-plane magnetic field, B. Under such conditions the density of states (DOS) deviates from the occasionally stereotypic step-like form, both quantitatively and qualitatively. The DOS modification causes an impressive fluctuation of M in cases of vigorous competition between spatial and magnetic confinement. At low T , the enhanced electron spin-splitting, Uoσ, acquires its bigger value. At higher T , Uoσ decreases, augmenting the influence of the spin-up electrons. Increasing B, Uoσ increases and accordingly electrons populate spin-down subbands while they abandon spin-up subbands. Furthermore, due to the DOS modification, all energetically higher subbands become gradually depopulated. . IntroductionDuring the last few years, the advancement of growth, characterization and understanding of transition-metal-doped III-V semiconductors has been impressive. In magnetic semiconductor heterostructures based e.g. on (Ga,Mn)As, Mn substitutes a small fraction of cations providing holes and local magnetic moments. Many new phenomena have been accordingly brought to light e.g. tunnel magnetoresistance, spin-dependent scattering, interlayer coupling due to carrier polarization, electrical electron and hole spin injection, and electric field control of ferromagnetism [1]. Most of the structures used are based on III-V magnetic semiconductors like (In,Mn)As and (Ga,Mn)As which utilize the valence band [1]. The highest ferromagnetic transition temperature, T C , reported so far for III-V-based valence-band magnetic semiconductors is 110 K for (Ga,Mn)As and 60 K for (In,Mn)As, for bulk materials, while T C can reach 150 K for some heterostructures [1].On the other hand, in II-VI materials, Mn provides only local magnetic moments, and the corresponding heterostructures e.g. ZnSe/Zn 1−x−y Cd x Mn y Se/ZnSe utilize the conduction band.

show abstract

Magnetoresistance and electronic structure of asymmetricGaAs/Al0.3Ga0.7As

Cited by 19 publications

References 23 publications

Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields

Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields

Magnetotunneling in GaAs/AlxGa1-xAs Double Barrier Heterostructures with and without On-Center-Well Impurity Planes

Spin polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states

Contact Info

Product

Resources

About