Magnetophonon Resonance in In<sub>x</sub>Ga<sub>1-x</sub>As (x=0.53)

Sugimasa, Tetsuya; Yamasaki, Takahiro; Hazama, H.; Imachi, Tadashi; Hamaguchi, Chihiro

doi:10.7567/jjaps.25s1.55

Cited by 3 publications

(1 citation statement)

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“…The Monte Carlo simulation here includes all the major scattering mechanisms except electron-electron scattering: acoustic, polar optical, intra-and inter-valley nonpolar optical phonon scattering, ionized impurity scattering and random alloy scattering. Experimentally it has been observed that InGaAs possesses both InAs-like LO phonons and GaAslike phonons [30,31]. However, Kobayashi et al [9] have observed that the existence of these two phonon modes has only a minor effect on charge transport and therefore they are neglected in this work.…”

Section: Scattering Rates In a Two-dimensional Electron Gasmentioning

confidence: 87%

Monte Carlo simulation of electron transport in delta-doped lattice-matched and strained-balanced InGaAs/InAlAs quantum wells

Watling

Walker

Harris

et al. 1999

Semicond. Sci. Technol.

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Strained-balanced In x Ga 1−x As/InAlAs quantum well structures have been shown to generate high carrier density, high-mobility layers suitable for power field effect transistor (FET) applications. Doped channel devices allow higher carrier densities than modulation-doped structures but with reduced carrier velocities due to increased ionized impurity scattering. The amount of ionized impurity scattering may be reduced by the introduction of compositional grading in In x Ga 1−x As quantum wells which results in an increasing depth of the quantum well on the opposite side to the delta-doped plane. The grading is achieved by the use of a number of steps, where each step has a fixed value of x. An ensemble Monte Carlo simulation has been used to calculate the velocity-field characteristics of the conduction electrons confined within the quantum well in such a structure. Here the envelope wavefunctions for the confined electrons are calculated using a self-consistent Poisson-Schrödinger solver. Our velocity-field characteristics show good agreement with experiment for the three-step structure but the agreement is noticeably worse for lattice-matched and five-step structures. We have shown that a correlation between the low-field mobility and saturation velocity observed experimentally for GaAs/AlGaAs and In x Ga 1−x As quantum wells and theoretically for GaAs/AlGaAs quantum wells is also valid for the predicted results in these structures. A similar explanation to that provided for the GaAs/AlGaAs quantum wells is shown to hold here.

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Section: Scattering Rates In a Two-dimensional Electron Gasmentioning

confidence: 87%