Magnetoimpedance and magnetocapacitance of anion-substituted manganese chalcogenides

Abstract

The magnetoresistive effect in MnSe1−XTeX manganese chalcogenides with a substitute concentration of X = 0.1 is studied by impedance spectroscopy. The magnetoimpedance above the Neel temperature is found. The obtained experimental data are explained in the framework of the model of existence of magnetic nanoareas of two types. Two activation energies in the low- and high-frequency regions are determined from the frequency and temperature dependences of the permittivity described in the Debye model. The extrema found in the temperature dependence of the pyroelectric current are consistent with the maxima in the temperature dependence of magnetization. Temperature dependence of the carrier relaxation time is established. The magnetocapacitance of the MnSe1−XTeX solid solutions is found. The change in the carrier type above the Neel temperature and the temperature of the transition to the magnetically ordered state in the MnTe nanoarea is established.

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films

“…In the bulk MnSe 1−Х Te Х samples [6], substitution of tellurium for selenium retains the cubic and magnetic structure. In the MnSe 1−Х Te Х compound with Х=0.1 [14,15], the 100% negative magnetoresistance near the Curie temperature was established. The magnetoresistive effect weakens with increasing tellurium concentration and vanishes at Х=0.3.…”

Concentration dependences of the structural, magnetic and kinetic properties of manganese chalcogenides doped with tellurium

“…Magnetic semiconductors undergoing electronic [1][2][3][4] and magnetic phase transformations [5][6][7][8], both in temperature and in concentration, are promising materials for the development and creation of an element base of microelectronics. The interaction of the magnetic and elastic subsystems leads to a change in the magnetic structure, to new magnetic phases in which the electronic structure and kinetic properties can change [9][10][11]. Such substances include MnSe1-XTeX solid solutions synthesized on basis of manganese monoselenide.…”

Dynamic characteristics of electric charge in HoxMn1–xS

“…In particular, much attention is paid to multiferroics, which have magnetic and ferroelectric ordering and magnetoelectric interaction [4][5][6]. The solution of this problem is associated with manganese sulfides substituted with rare earth elements [7][8][9], in particular with a solid solution of HoxMn1-xS [10]. Substitution of manganese with holmium ions with x = 0.05 leads to a sharp decrease in the paramagnetic Curie temperature by four times, to a change in magnetic properties [11].…”