Magnetoelectric write and read operations in a stress-mediated multiferroic memory cell

Klimov, A. A.; Tiercelin, Nicolas; Dusch, Yannick; Giordano, Stefano; Mathurin, Théo; Pernod, Philippe; Preobrazhensky, V.; Churbanov, Anton; Никитов, С. А.

doi:10.1063/1.4983717

Cited by 49 publications

(52 citation statements)

References 30 publications

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“…We note that this energy expression is essentially the same as what was reported in Ref. [25] expressed using magnetization components, m x , m y , m z . For example, the anisotropy energy is written in [25] as −E A sin 2 φ, LLG (a) (b) Fig.…”

Section: Experimental Benchmarksupporting

confidence: 68%

“…2. Experiment vs circuit model: (a) The results of the self-consistent circuit model for the structure in (b) are in good agreement with the experimental results in [25]. VME is the mathematical difference of two measurements of VR with and without the external magnetic field, VME = VR(H = 0) − VR(H = 0).…”

Section: Experimental Benchmarksupporting

confidence: 61%

“…We start with the MELRAM device ( Fig. 2b) reported recently in [25] where the magnetic energy has the form…”

Section: Experimental Benchmarkmentioning

confidence: 99%

“…[25] expressed using magnetization components, m x , m y , m z . For example, the anisotropy energy is written in [25] as −E A sin 2 φ, LLG (a) (b) Fig. 2.…”

Section: Experimental Benchmarkmentioning

confidence: 99%

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Equivalent Circuit for Magnetoelectric Read and Write Operations

et al. 2018

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We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where the "1" and "0" states are not represented by states with net magnetization (like mx, my or mz) but by different easy axes, quantitatively described by (m 2x − m 2 y ) which switches from "0" to "1" through the write voltage. This change is directly detected as a read signal through the inverse effect. The use of (m 2x − m 2 y ) to represent a bit is a radical departure from the standard convention of using the magnetization (m) to represent information. We then show how the equivalent circuit can be used to build a device exhibiting tunable randomness and suggest possibilities for extending it to non-volatile memory with read and write capabilities, without the use of external magnetic fields or magnetic tunnel junctions.

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Section: Experimental Benchmarksupporting

confidence: 68%

Section: Experimental Benchmarksupporting

confidence: 61%

“…We start with the MELRAM device ( Fig. 2b) reported recently in [25] where the magnetic energy has the form…”

Section: Experimental Benchmarkmentioning

confidence: 99%

“…[25] expressed using magnetization components, m x , m y , m z . For example, the anisotropy energy is written in [25] as −E A sin 2 φ, LLG (a) (b) Fig. 2.…”

Section: Experimental Benchmarkmentioning

confidence: 99%

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Equivalent Circuit for Magnetoelectric Read and Write Operations

et al. 2018

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“…If the magnetic state of the magnetostrictive nanomagnet changed, then it will induce a magnetoelectric voltage in the piezoelectric layer which can be read. If no toggling occurs, this voltage will not be produced [132]. Fig.…”

Section: Fig 29mentioning

confidence: 99%

Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

et al. 2018

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The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate 'switches' that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ∼1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is 'non-volatile', so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets, with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches-a field known as 'straintronics'. It also outlines key challenges in straintronics.

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Spatially Resolved Electric‐Field Manipulation of Magnetism for CoFeB Mesoscopic Discs on Ferroelectrics

Liu

et al. 2018

Adv Funct Materials

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Electric-field control of magnetism in ferromagnetic/ferroelectric multiferroic heterostructures is a promising way to realize fast and nonvolatile random-access memory with high density and low-power consumption. An important issue that has not been solved is the magnetic responses to different types of ferroelectric-domain switching. Here, for the first time three types of magnetic responses are reported induced by different types of ferroelectric domain switching with in situ electric fields in the CoFeB mesoscopic discs grown on PMN-PT(001), including type I and type II attributed to 109°, 71°/180° ferroelectric domain switching, respectively, and type III attributed to a combined behavior of multiferroelectric domain switching. Rotation of the magnetic easy axis by 90° induced by 109° ferroelectric domain switching is also found. In addition, the unique variations of effective magnetic anisotropy field with electric field are explained by the different ferroelectric domain switching paths. The spatially resolved study of electric-field control of magnetism on the mesoscale not only enhances the understanding of the distinct magnetic responses to different ferroelectric domain switching and sheds light on the path of ferroelectric domain switching, but is also important for the realization of low-power consumption and high-speed magnetic random-access memory utilizing these materials.

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Magnetoelectric write and read operations in a stress-mediated multiferroic memory cell

Cited by 49 publications

References 30 publications

Equivalent Circuit for Magnetoelectric Read and Write Operations

Equivalent Circuit for Magnetoelectric Read and Write Operations

Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

Spatially Resolved Electric‐Field Manipulation of Magnetism for CoFeB Mesoscopic Discs on Ferroelectrics

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