Magnetoelectric properties of magnetite thin films

Feng, J.; Pashley, R.; Nicolet, M.‐A.

doi:10.1088/0022-3719/8/7/017

Cited by 47 publications

(27 citation statements)

References 23 publications

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“…The deduced data were given in Table I. Whereas the high-temperature values are in agreement with the values reported by Feng et al, 10 the low-temperature values are seen to be lower than the bulk one ͑105 meV͒. All the activated energy values of the ultrathin films are similar.…”

Section: Resultssupporting

confidence: 85%

The magnetic and magnetoresistance properties of ultrathin magnetite films grown on MgO substrate

Yinqing

McEvoy

Ramos

et al. 2006

Journal of Applied Physics

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We report on the properties of ultrathin ͑2, 4, 6, and 8 nm͒ epitaxial films of magnetite, Fe 3 O 4 , grown on MgO ͑100͒. Atomic force microscopy image and V-I curves suggest that the films at this thickness are still continuous. The resistivity versus temperature results imply that the conductivity mechanism in all these films is similar. The resistivity of 4 nm thick film is much greater than that of 6 and 8 nm films. The films show ferrimagnetic instead of reported superparamagnetic behavior. The dead layer formed by Mg diffusion between MgO substrate and magnetite films and also the dead layer on the top uncapped film could be the possible reasons for the anomalous resistivity and magnetic properties of the ultrathin films. The effect of the "dead layer" in the thinner film is relatively greater than the one in the thicker film and should lead to a lower magnetoresistance.

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Section: Resultssupporting

confidence: 85%

The magnetic and magnetoresistance properties of ultrathin magnetite films grown on MgO substrate

Yinqing

McEvoy

Ramos

et al. 2006

Journal of Applied Physics

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“…with the scaling exponent generically larger than unity [3][4][5][6][7][8][9][10][11][12][13][14] . Earlier experiments on AHE in this regime was done in magnetite Fe 3 O 4 3 , and the recent experimental observations of this scaling are reported in a large range of materials including granular Fe/SiO 2 films, magnetite epitaxial thin films, dilute magnetic semiconductor (DMS) Ga 1−x Mn x As, and ferromagnetic semiconductor anatas Ti 1−x Co x O 2−δ .…”

Section: 40∼175 XXmentioning

confidence: 99%

Scaling of the anomalous Hall effect in the insulating regime

Liu

Sinova

2011

Phys. Rev. B

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We develop the theory of the scaling of the anomalous Hall effect (AHE) in the insulating regime, which is observed in experiments to relate the anomalous Hall and diagonal conductivities by σ AH xy ∝ σ 1.40∼1.75 xx for a large range of materials. This scaling is qualitatively different from the ones observed in metals. Basing our theory on the phonon-assisted hopping mechanism and percolation theory in random networks, we derive a general formula for the anomalous Hall conductivity (AHC), in which the percolation theory averaging of the random linked triad clusters is a key aspect that captures the correct observed physics. We show that it scales with the longitudinal conductivity as σ AH xy ∼ σ γ xx with γ predicted to be 1.33 ≤ γ ≤ 1.76, quantitatively in agreement with the experimental observations. Our theory predicts that this scaling remains similar regardless of whether the hopping process is long range type (variable range hopping) or short range type (activation hopping), or is influenced by interactions, i.e. Efros-Shklovskii (E-S) regime. Our theory completes the understanding of the AHE phase diagram in the insulating regime.

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“…36) Hematite has a resistivity of over 10 5 ³ cm, 7) while magnetite has a lower resistivity of approximately 10 ¹3 ³ cm. 8,9) The bandgaps of these oxides also differ significantly. 10,11) Therefore, the electrical properties of Fe-O films can be significantly changed with the oxygen concentration.…”

Section: Introductionmentioning

confidence: 99%

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

et al. 2014

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We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O 2 and N 2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O 2 and N 2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O 2 and N 2 gas flow rate. The resistivity increase with the O 2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe 3 O 4 , to a mixed phase of FeO+¡-Fe 2 O 3 , and to a single phase of ¡-Fe 2 O 3 , as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N 2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Keywords: iron oxide, nitrogen-doped, electrical resistivity, effects of oxygen and nitrogen flow rate

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Magnetoelectric properties of magnetite thin films

Cited by 47 publications

References 23 publications

The magnetic and magnetoresistance properties of ultrathin magnetite films grown on MgO substrate

The magnetic and magnetoresistance properties of ultrathin magnetite films grown on MgO substrate

Scaling of the anomalous Hall effect in the insulating regime

Effects of O<sub>2</sub> and N<sub>2</sub> Flow Rate on the Electrical Properties of Fe-O-N Thin Films

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