Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

Dielectric breakdown of BaO–B2O3–ZnO–[(BaZr0.2Ti0.80)O3]0.85 [(Ba0.70Ca0.30)TiO3]0.15 glass-ceramic composites

“…The dielectric energy storage density values were calculated using the formula, E d =(ε 0 ε r E b 2 )/2, where E d is the energy storage density (J/cm 3 ), ε 0 is the permittivity of free space (8.85 × 10 − 14 F/cm), ε r is the relative permittivity. Pure BZT-BCT ceramics prepared through solid-state sintering route exhibit, dielectric breakdown strength of 153 kV/cm and a high energy storage density of~7.48 J/cm 3 , where the real breakdown voltage occurred and the calculated value using above formula and the measured energy density for pure ferroelectric BZT-BCT~2.10 J/cm 3 from P-E hysteresis [22]. 50 wt.% of glass mixed ceramic BZT-BCT (BZCTG50) composition exhibited a maximum of 600 kV/cm dielectric breakdown field strength even though the dielectric breakdown field strengths for glass mixed ceramics are moderately high, whose energy storage density values calculated are considerably low (~0.14 J/cm 3 , 0.15 J/cm 3 , 0.04 J/cm 3 , 0.02 J/cm 3 , 0.12 J/cm 3 ), which were due to the low room temperature dielectric permittivity values.…”

“…3, in order to explore the phase structural transformation of the sintered pellets at room temperature. The shape of the Raman spectra resembles that of lead-free BZT-BCT ceramics [13,22]. The BZT-BCT has a basic matrix of BaTiO 3 , with an ABO 3 type perovskite structure.…”

“…Depending upon the sample dimensions and test protocol, glass synthesized by a bulk process can exhibit dielectric breakdown strengths in the range of 4-9 MV/cm [6]. Conventional ceramics show low breakdown strength of 10 kV/mm, despite having high dielectric permittivity values, during solid-state reaction process due to residual pores formed [7,22]. A glass-ceramic material is a composite created through controlled crystallization of an appropriate glass composition with pore-free structure and fine grains [8,9].…”

Magnetoelectric and Multiferroic Properties of BaTiO3/NiFe2O4/BaTiO3 Heterostructured Thin Films Grown by Pulsed Laser Deposition Technique

“…Here, in this case, we have platinum (Pt) as both top and bottom electrodes. The J-E relationship curve in the region of low electric field, the MIM structure was found to follow an ohmic conduction mechanism (J α E n , n~1) [21,22]. Whereas, in the region of higher electric field, the observed behavior may be attributed to Schottky type conduction and space charge-limited current (SCLC) conduction model (J α E n , n > 1) [23,24].…”

“…Thin film growth is an ever growing advanced miniaturization technique or technology with a controlled way of synthesis for producing high quality thin films with improved properties for existing materials by strain engineering and is opening doors for their utilization in device applications. In addition to single-phase BFO and/or chemically doped/substituted BFO thin films, bi-ferroic BiMnO 3 nebulized spray pyrolysis thin films [11,18,19,[21][22][23], few other hexagonal manganite [ErMnO 3 and YMnO 3 (YMO)]-based thin films [24,25], orthorhombically distorted perovskite structured TbMnO 3 thin films [26], Bi 5 Ti 3 FeO 15 thin films [27], and the epitaxial Bi 5 Ti 3 FeO 15 -CoFe 2 O 4 multiferroic nanostructures were grown by pulsed laser deposition [28] were produced using various deposition techniques, around the globe for their suitability towards magnetoelectric multiferroic applications.…”