Magnetoelectric and multiferroic properties of ternary copper chalcogenides Cu2MIIMIVS4

Nénert, Gwilherm; Palstra, Thomas

doi:10.1088/0953-8984/21/17/176002

Cited by 25 publications

(23 citation statements)

References 46 publications

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“…Quaternary chalcogenides form a large class of materials generally composed of earth-abundant and nontoxic elements that are of interest for potential applications in solar-cell absorbers [1], photo catalysts for solar water splitting [2], and magneto-optic and magneto-ferroics [3,4]. The crystal structure can accommodate a large number of different elements at different lattice sites thus allowing for relatively complex electronic and structural properties as compared to binary or ternary chalcogenide materials.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

Nolas

Hassan

Dong

et al. 2016

Journal of Solid State Chemistry

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Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM 2 InTe 4 (M=Zn, Cd), Journal of Solid State Chemistry, http://dx. AbstractQuaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn 2 InTe 4 and CuCd 2 InTe 4 which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn 2 InSe 4 . These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications.

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Section: Introductionmentioning

confidence: 99%

“…The crystal structural relationship between ZnS and CuM 2 InQ 4 (M = Zn, Cd; Q = Se, Te) can be understood by cross substitution of cations to obtain higher order materials [15]. (Zn 2+ ) 4 reported study [19].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

Nolas

Hassan

Dong

et al. 2016

Journal of Solid State Chemistry

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“…[21,22] Nenért et al [9] have built up the free energy equation by considering two Mn spins (S 1 with position (0,0,0) and S 2 with position (…”

Section: Magnetically Induced Ferroelectric Polarization a Landmentioning

confidence: 99%

“…The search for novel multiferroics other than oxides has already started: recently Nénert et al [9] have suggested the ternary copper chalcogenide Cu 2 MnSnS 4 (with nominal valences as Cu 1+ , Mn 2+ , Sn 4+ , and S 2− ) as a candidate of "improper" ferroelectricity, using a symmetrybased analysis and the Landau phenomenological theory, with the ferroelectricity induced by a peculiar antiferromagnetic (AFM) Mn spin configuration. Experimentally, neutron diffraction measurements have clarified that such AFM configuration occurs under T N =8.8 K, with Mnspins slightly deviating from the c axis by an angle between 6…”

Section: Introductionmentioning

confidence: 99%

“…the crystallographic b direction) with possibly large magnetoelectric coupling. [9] The Landau phenomenological theory, based on the symmetry analysis of both the crystal structure and the magnetic order, is a powerful tool to investigate magnetically-induced ferroelectricity. [5,13] However, in order to quantify the value of P and to clarify the relation between magnetism and ferroelectricity via the electronic structure, a combination of Landau theory and ab initio density functional theory (DFT) calculations is desirable.…”

Section: Introductionmentioning

confidence: 99%

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Magnetically induced ferroelectricity inCu2MnSnS4andCu2

2010

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We investigate magnetically-induced ferroelectricity in Cu2MnSnS4 by means of Landau theory of phase transitions and of ab initio density functional theory. As expected from the Landau approach, ab initio calculations show that a non-zero ferroelectric polarization P along the y direction (of the order of a tenth of µC/cm 2 ) is induced by the peculiar antiferromagnetic configuration of Mn spins occurring in Cu2MnSnS4. The comparison between P , calculated either via density-functionaltheory or according to Landau approach, clearly shows that ferroelectricity is mainly driven by Heisenberg-exchange terms and only to a minor extent by relativistic terms. At variance with previous examples of collinear antiferromagnets with magnetically-induced ferroelectricity (such as AFM-E HoMnO3), the ionic displacements occurring upon magnetic ordering are very small, so that the exchange-striction mechanism (i.e. displacement of ions so as to minimize the magnetic coupling energy) is not effective here. Rather, the microscopic mechanism at the basis of polarization has mostly an electronic origin. In this framework, we propose the small magnetic moment at Cu sites induced by neighboring Mn magnetic moments to play a relevant role in inducing P . Finally, we investigate the effect of the anion by comparing Cu2MnSnSe4 and Cu2MnSnS4: Se-4p states, more delocalized compared to S-3p states, are able to better mediate the Mn-Mn interaction, in turn leading to a higher ferroelectric polarization in the Se-based compound.

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Multifunctional Copper‐Based Quaternary Chalcogenide Semiconductors Toward State‐of‐the‐Art Energy Applications

Kush

Deka

2018

ChemNanoMat

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Cu-based quaternary chalcogenide semiconductors have been attractive materials in many aspects since the last decade. Most of the scientific literature about quaternary chalcogenides is dedicated to photovoltaic (PV) research with no astonishment as the material initially emerged as a costeffective replacement of expensive Si for PV applications. These materials possess all the important properties such as, abundant and non-toxic constituent elements, efficient charge transport, optimum band gap, and high absorption coefficient for being an efficient PV material in either thin film or nanoparticle form. However, in the recent few years, a new range of quaternary materials Cu 2 M I M II X 4 (where, M I =Zn, Ni, Co, Fe, Mn, Cd and Hg; M II =Si, Sn and Ge and X=S and/or Se) have evolved and found applications in thermoelectrics, photocatalysis and photoelectrocatalysis, sensors and bat-teries etc. The combination of properties exhibited by these quaternary chalcogenides such as optical and electric, optical and magnetic, electric and thermal makes them potential materials, which could be utilized in multiple applications. Although the PV properties of these quaternary chalcogenides has been discussed earlier in many reports, the other versatile applications of the material have not been reviewed yet. The present article sheds light on the multifunctional aspects of various new Cu-based quaternary chalcogenides, their synthesis, effect of doping on their properties, and then elaborating the discussion on their chemical and physical properties that are helpful in different applications along with photovoltaics. Here, we discuss synthetic methods bestowing enhanced features and also summarize their achieved efficiency in recent years. Scheme 1. Schematic representation for the derivation of quaternary chalcogenides. 2 3 4 5 6 7 8

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Magnetoelectric and multiferroic properties of ternary copper chalcogenides Cu₂M^IIM^IVS₄

Cited by 25 publications

References 46 publications

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

Magnetically induced ferroelectricity inCu2MnSnS4andCu2

Multifunctional Copper‐Based Quaternary Chalcogenide Semiconductors Toward State‐of‐the‐Art Energy Applications

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