Magnetocapacitance of a MODFET under two-dimensional periodic potential modulation

Kliros, George S.; Divari, P. C.

doi:10.1016/j.mejo.2007.02.004

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…Such devices have a small DOS for channel carriers and the resultant small quantum capacitance due to the DOS may have a serious influence on the device properties. The magnetocapacitance of a gated MIS-structure per unit area C(B), at a finite temperature T, can be calculated through the relation [9] 1…”

Section: Quantum Capacitancementioning

confidence: 99%

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Quantum capacitance of MIS structures based on diluted magnetic semiconductors

Kliros

2009

2009 International Conference on Microelectronics - ICM

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Quantum capacitance has an important role in nanoscale device modelling. In the present paper, we investigate the quantum magneto-capacitance of metal-insulatorsemiconductor (MIS) structures based on diluted magnetic semiconductors (DMS) in the presence of Rashba spin-orbit interaction (SOI). Typical beating patterns with well defined nodepositions in the oscillating quantum capacitance are observed. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the giant Zeeman splitting (including s-d exchange interaction) and the Rashba SOI, is discussed.

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Section: Quantum Capacitancementioning

confidence: 99%

“…Recently, the magnetocapacitance oscillations in MODFETs have been studied in detail [9], [10]. In this communication, we investigate the quantum capacitance of a metal-insulator-semiconductor (MIS) structure based on a DMS in the presence of a perpendicular magnetic and electric field.…”

Section: Introductionmentioning

confidence: 99%