Magnetocaloric properties in the PrFe2Ge2 antiferromgnet

Xu, Zhiyu; Gong, Wenyu; Lin, Aiming; Zhang, Yan; Wang, Licheng

doi:10.2991/icsmme-15.2015.28

Cited by 2 publications

(1 citation statement)

References 20 publications

(37 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These domains are anti-ferromagnetically ordered up to 200 Oe. The Arrot plot (Figure b (right inset)) provides the evidence of non saturating AFM in an SAF layer for a low field. − These [Co/Pt] 4 and SAF get coupled with Co 20 Fe 60 B 20 , resulting in the pinning of the RL.…”

Section: Resultsmentioning

confidence: 99%

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Moinuddin

Lone

Srinivasan

et al. 2019

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

This study reports the current-induced switching of a Co20Fe60B20/MgO/Co20Fe60B20-based perpendicular magnetic tunnel junction (p-MTJ) with a [Co/Pt]4 stack as a synthetic anti-ferromagnetic (SAF) layer. Electrical and spectroscopic evidence of p-MTJs reveals that the pinning of the Co20Fe60B20 layer by the SAF through a Ta spacer layer enhances the switching resistance after annealing at 650 K (375 °C). A drastic improvement of 6 times in the tunneling magnetoresistance (TMR) was observed after annealing in an external magnetic field (14% for as-deposited and 83% for annealed both for zero bias). The TMR also shows a gradual increased behavior with bias at room temperature, which may be attributed to the multi-domain switching with increase in current. The analogous SAF-based MTJ devices were modeled using the non-equilibrium Green’s function (NEGF) to validate the experimental results. The existence of a stable TMR and the low switching current density of the fabricated p-MTJ structures provides higher reliability and low-power operation. This makes it attractive for next-generation MTJ applications, especially for embedded memory, system-on-chip, IoT, and neuromorphic computing applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Moinuddin

Lone

Srinivasan

et al. 2019

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

Effects of annealing on nanocrystalline GdVO4 and its magnetocaloric properties

Ryu

Nam

2020

Appl. Phys. A

View full text Add to dashboard Cite

Magnetocaloric properties in the PrFe2Ge2 antiferromgnet

Abstract: Abstract-Magnetic properties and magnetocaloric effects (MCE) of the tetragonal (ThCr

Cited by 2 publications

References 20 publications

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Effects of annealing on nanocrystalline GdVO4 and its magnetocaloric properties

Contact Info

Product

Resources

About

Magnetocaloric properties in the PrFe2Ge2 antiferromgnet

Abstract: Abstract-Magnetic properties and magnetocaloric effects (MCE) of the tetragonal (ThCr

Cited by 2 publications

References 20 publications

Realization of Large Area Co20Fe60B20-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Realization of Large Area Co20Fe60B20-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Effects of annealing on nanocrystalline GdVO4 and its magnetocaloric properties

Contact Info

Product

Resources

About

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application