Abstract:Present study reports the magnetocaloric effect (MCE) and piezoresponse of integrated ferroelectric-ferromagnetic heterostructures of PbZr0.52Ti0.48O3 (PZT) (5 nm)/ Bi-Sr-Ca-Cu2-OX (BSCCO) (5 nm)/ La0.67Sr0.33MnO3 (LSMO) (40 nm)/ MgO. Magnetic and pizoresponse behavior of the heterostructures are found to be governed by magneto-electric coupling and induced lattice strains. In addition, the MCE is studied using Maxwell equations from both Field Cooled (FC) and Zero Field Cooled (ZFC) magnetization data. Maximu… Show more
“…Mechanical switching has been reported in a series of ferroelectric materials, such as BiFeO 3 , 17−19 BaTiO 3 , 10,20 (1 − x)Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (x = 0.32, 0.40), 21 (Zr 0.2 Ti 0.8 )O 3 , 22 PbZr 0.48 Ti 0.52 O 3 . 23 The flexoelectric effect on ferroelectric polarization was investigated by regulating the lattice mismatch with the substrates, 4 oxygen vacancy, 7,24,25 and deposition temperature 26 during the film growth and bending the substrate directly. 27 Many strategies have been conducted to decrease the threshold force of ferroelectric domain switching.…”
Section: ■ Introductionmentioning
confidence: 99%
“…(a) The threshold force for mechanically induced single-domain inversion in several ferroelectric films reported to date. (b) Relationshipbetween threshold force and in-plane strain 10,19,23,28,29.…”
Low-energy switching of ferroelectrics has been intensively
studied
for energy-efficient nanoelectronics. Mechanical force is considered
as a low-energy consumption technique for switching the polarization
of ferroelectric films due to the flexoelectric effect. Reduced threshold
force is always desirable for the considerations of energy saving,
easy domain manipulation, and sample surface protection. In this work,
the mechanical switching behaviors of BaTiO3/SrRuO3 epitaxial heterostructure grown on Nb:SrTiO3 (001)
substrate are reported. Domain switching is found to be induced by
an extremely low tip force of 320 nN (estimated pressure ∼0.09
GPa), which is the lowest value ever reported. This low mechanical
threshold is attributed to the small compressive strain, the low oxygen
vacancy concentration in BaTiO3 film, and the high conductivity
of the SrRuO3 electrode. The flexoelectricity under both
perpendicular mechanical load (point measurement) and sliding load
(scanning measurement) are investigated. The sliding mode shows a
much stronger flexoelectric field for its strong trailing field. The
mechanical written domains show several advantages in comparison with
the electrically written ones: low charge injection, low energy consumption,
high density, and improved stability. The ultralow-pressure switching
in this work presents opportunities for next-generation low-energy
and high-density memory electronics.
“…Mechanical switching has been reported in a series of ferroelectric materials, such as BiFeO 3 , 17−19 BaTiO 3 , 10,20 (1 − x)Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (x = 0.32, 0.40), 21 (Zr 0.2 Ti 0.8 )O 3 , 22 PbZr 0.48 Ti 0.52 O 3 . 23 The flexoelectric effect on ferroelectric polarization was investigated by regulating the lattice mismatch with the substrates, 4 oxygen vacancy, 7,24,25 and deposition temperature 26 during the film growth and bending the substrate directly. 27 Many strategies have been conducted to decrease the threshold force of ferroelectric domain switching.…”
Section: ■ Introductionmentioning
confidence: 99%
“…(a) The threshold force for mechanically induced single-domain inversion in several ferroelectric films reported to date. (b) Relationshipbetween threshold force and in-plane strain 10,19,23,28,29.…”
Low-energy switching of ferroelectrics has been intensively
studied
for energy-efficient nanoelectronics. Mechanical force is considered
as a low-energy consumption technique for switching the polarization
of ferroelectric films due to the flexoelectric effect. Reduced threshold
force is always desirable for the considerations of energy saving,
easy domain manipulation, and sample surface protection. In this work,
the mechanical switching behaviors of BaTiO3/SrRuO3 epitaxial heterostructure grown on Nb:SrTiO3 (001)
substrate are reported. Domain switching is found to be induced by
an extremely low tip force of 320 nN (estimated pressure ∼0.09
GPa), which is the lowest value ever reported. This low mechanical
threshold is attributed to the small compressive strain, the low oxygen
vacancy concentration in BaTiO3 film, and the high conductivity
of the SrRuO3 electrode. The flexoelectricity under both
perpendicular mechanical load (point measurement) and sliding load
(scanning measurement) are investigated. The sliding mode shows a
much stronger flexoelectric field for its strong trailing field. The
mechanical written domains show several advantages in comparison with
the electrically written ones: low charge injection, low energy consumption,
high density, and improved stability. The ultralow-pressure switching
in this work presents opportunities for next-generation low-energy
and high-density memory electronics.
“…Piezocomposites contain piezoelectric materials as the fibre phase and a passive material (epoxy) as the matrix phase. Piezocomposites are predominantly used in the actuator, vibration control, energy harvesting and cooling applications [2,[5][6][7][8][9][10][11][12][13][14][15][16][17].…”
Section: Introductionmentioning
confidence: 99%
“…Due to low phase-transition temperature of ferromagnetic materials, extensive studies have been carried out for magnetocaloric effect with their applications in solid-state ferromagnetic refrigeration devices [14,18,19] as compared to electrocaloric effect (ECE). Though ferromagnetic materials can produce giant cooling effect near room temperature [20,21], it requires a strong magnetic field.…”
Ferroelectric materials are soon to be considered as an alternate replacement for the vapour compression, and vapour absorption cooling systems and efficient energy harvesters from low-grade waste heat due to their electrocaloric and elastocaloric response. In the current work, a theoretical framework based on a thermodynamical approach is proposed to estimate the electrocaloric, elastocaloric and electro-elastocaloric effect as an isothermal change in the entropy or adiabatic temperature change (ΔT) in the piezocomposites. The proposed nonlinear constitutive model has been incorporated into a non-iterative algorithmic setup to capture the ferroelectric and ferroelastic response at different temperatures for piezocomposites. The model parameters are obtained by performing experiments for various fibre volume fractions of 1–3 type piezocomposites and are used to simulate the relations between polarization–temperature and strain–temperature at different external mechanical and electric fields. Using the present model, an Olsen cycle (pyroelectric energy harvesting cycle) is drawn to predict the pyroelectric energy density (ND) of piezocomposites.
“…[1 ] In a related attempt Edwards et al [6] reported the mechanical switching threshold (1000 nN: estimated tip pressure = 0.8 GPa; tip radius = 20 nm) of polycrystalline PbZr 0.53 Ti 0.47 O 3 , which lays at the morphotropic phase boundary (MPB) of the Pb(Zr x Ti (1−x) )O 3 family. Compositions close to the MPB of Pb(Zr x Ti (1−x) )O 3 offer the possibility of transitions between tetragonal and rhombohedral phases due to small strains [27][28][29][30][31] as well as the co-existence of tetragonal and rhombohedral phases, [5,32] and have been investigated with respect to thickness-dependent flexoelectric fields, [32] making them ideal for pressure-induced polarization switching. Therefore, in this work, we explore the ferroelectric and mechanical Figure 1a shows the room temperature (297 K) HR-X-ray diffraction (XRD) patterns of the PZT/YBCO/LAO heterostructures.…”
several mechanisms [4] including flexoelectric effect, [1] ferroelectric-ferroelastic switching [5,6] and chemical modifications on the surface [7] and in the bulk. [8,9] The electrochemical effect in the bulk can be induced by diffusion of oxygen vacancies, [10] which in turn can lead to electrostatic or Vegard strain. [4] The contribution of the aforementioned mechanisms in depicting mechanical switching of ferroelectrics has been discussed recently, [4,11] while further work is still required to gain a more complete understanding. Scanning probe-based investigations of mechanical behavior in ferroelectrics, [12] especially localized mechanical writing of nanoscale domains and mechanical erasing of electrically written domains [1] provide a suitable platform for further investigation of mechanoelectric devices [13,14] and concepts. [15,16] Ultralow pressure mechanical writing and noncontact reading might lead to new low energy electronics concepts and information storage energy costs of attojoule/bit, which has been explored for example through electrical control of magnetism concepts. [17] Mechanical switching has been reported in a range of ferroelectric materials from single crystals (BaTiO 3 , [18] (1 − x) Pb(Mg 1/3 Nb 2/3)O 3 − xPbTiO 3 (x = 0.32, 0.40) [19]) to thin films (Pb(Zr 0.2 Ti 0.8)O 3 , [20,21] BaTiO 3 , [1,22] BiFeO 3
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