Magneto-transport properties of B-, Si- and N-doped graphene

Abstract

The effect due to doping by B, Si, N on the magneto-transport properties of graphene is investigated using the generalized tight-binding model in conjunction with the Kubo formula. The crucial electronic and transport properties are greatly diversified by the type of dopant and doping concentration. The contribution from the guest atoms may open a band gap, thereby giving rise to the rich Landau level energy spectra and consequently the unique quantum Hall conductivity. The Fermi energy-dependent quantum Hall effect appears as a step structure having both integer and half-integer plateaus. Doping leads to the occurrence of zero conductivity, unlike the plateau sequence for pristine graphene. The predicted dopant-and concentration-enriched quantum Hall effect for doped graphene should provide useful information for magneto-transport measurements and possible technological applications as well as metrology.

Atomistic Band-Structure Computation for Investigating Coulomb Dephasing and Impurity Scattering Rates of Electrons in Graphene

“…In recent years, by using the low-energy Dirac Hamiltonian [ 4 ], we have extensively explored varieties of dynamical properties of electrons in graphene and other two-dimensional materials, including Landau quantization [ 18 , 31 , 32 , 33 , 34 , 35 ], many-body optical effects [ 36 , 37 , 38 , 39 , 40 , 41 ], band and tunneling transports [ 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ], etc. In this paper, we particularly focus on the application of computed electronic states and band structures from a tight-binding model to the calculations of Coulomb and impurity scatterings of electrons in graphene on the basis of a many-body theory [ 3 , 4 ], where the former and latter determine the lineshape [ 1 ] of an absorption peak and the transport mobility [ 44 ], respectively.…”

Rich p -type-doping phenomena in boron-substituted silicene systems

“…On the other hand, the generalized tight-binding model [ 10 ], being very suitable under a uniform perpendicular magnetic field, is successfully established for layered graphene systems [ 11 ]. The diverse phenomena of magnetic quantization are clearly revealed in the various two-dimensional emergent materials [ 12 ], such as the unusual magnetic properties of group-IV [ 13 ] and group-V [ 14 ] few-layer systems.…”

Unusual features of nitrogen substitutions in silicene

“…These atomic congurations are quite different from those of the isolated atoms; therefore, the material surfaces are able to provide very active chemical environments. Diverse properties are easily achieved by modulating various critical factors including lattice symmetries, 10,11 planar/buckled/curved geometries, 12,13 stacking congurations [simple/greatly enlarged unit cells 14 ], chemical adatom adsorption, 15 guest atom substitutions, 16 defects/ vacancies, 17 quantum connement and edge structures, 18 heterojunctions, 19 gate voltages, 20 magnetic elds, 21 and mechanical strain. 22 In this paper, a theoretical framework built from rst-principles calculations is developed to comprehend the highly diverse essential properties of nitrogen-substituted silicene systems, especially the charge- 23 and spin-created quasiparticle behavior.…”