Magneto-Transport Characterization of p-Type HgCdTe

Tsen, G.K.O.; Musca, Charles; Dell, John; Antoszewski, J.; Faraone, Lorenzo

doi:10.1007/s11664-007-0103-y

Cited by 9 publications

(6 citation statements)

References 9 publications

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“…Although their measurements utilized high magnetic fields, the sample temperature was limited to 180 K. More recently, 4-300 K measurements on molecular beam epitaxy grown samples followed by data analysis using a hybrid mobility spectrum and least-squares fitting to extract mobilities of heavy and light holes were reported by Gui et al, 9 but the modeling was based on the relaxation time approximation ͑RTA͒ which is inaccurate for polar optical phonon ͑POP͒ scattering. Similar measurements in the same temperature range were also reported by Tsen et al 10 on liquid phase epitaxy ͑LPE͒ layers.…”

Section: Multicarrier Conduction and Boltzmann Transport Analysis Of supporting

confidence: 88%

“…Without adjustable parameters, the experimental mobilities could be reproduced very well by the calculations. The apparent increase in the experimental mobility at the highest temperatures, which has been observed previously, 10 is probably an artifact of the analysis insensitivity when B Ӷ 1. Figure 6 shows the experimental heavy hole mobilities for both bulk samples A and B ͑points͒ along with the calculations ͑lines͒.…”

Section: Resultssupporting

confidence: 66%

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Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Murthy

Venkataraman

Sharma

et al. 2009

Journal of Applied Physics

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Magnetotransport measurements in pulsed fields up to 15 T have been performed on mercury cadmium telluride (Hg1−xCdxTe, x∼0.2) bulk as well as liquid phase epitaxially grown samples to obtain the resistivity and conductivity tensors in the temperature range 220–300 K. Mobilities and densities of various carriers participating in conduction have been extracted using both conventional multicarrier fitting (MCF) and mobility spectrum analysis. The fits to experimental data, particularly at the highest magnetic fields, were substantially improved when MCF is applied to minimize errors simultaneously on both resistivity and conductivity tensors. The semiclassical Boltzmann transport equation has been solved without using adjustable parameters by incorporating the following scattering mechanisms to fit the mobility: ionized impurity, polar and nonpolar optical phonons, acoustic deformation potential, and alloy disorder. Compared to previous estimates based on the relaxation time approximation with outscattering only, polar optical scattering and ionized impurity scattering limited mobilities are shown to be larger due to the correct incorporation of the inscattering term taking into account the overlap integrals in the valence band.

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Section: Multicarrier Conduction and Boltzmann Transport Analysis Of supporting

confidence: 88%

Section: Resultssupporting

confidence: 66%

Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Murthy

Venkataraman

Sharma

et al. 2009

Journal of Applied Physics

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“…Surface passivation does not always bring desirable results due to n-type inversion layer. One of quantitative technique which can help interpret p-HgCdTe Hall data is quantitative mobility spectrum analysis (QMSA) [7]. Using this technique, both free-carrier densities and mobilities can be automatically determine from magnetic field dependent Hall and resistivity data.…”

Section: Growth and Characterization Of Hgcdte Structuresmentioning

confidence: 99%

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

et al. 2010

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One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P + -contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R0A product of HgCdTe photodiodes in temperatures close to 230 K.

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“…Highly doped as-grown material demonstrated n-type conduction with low carrier concentrations, implying that the majority of arsenic incorporate as neutral complexes during growth. After a high-temperature anneal, only about 20% of arsenic becomes activated indicating a different annealing approach is required for full activation to p-type [28]. Techniques improving the control of the growth process were also studied.…”

Section: -2009 Mbe Hgcdtementioning

confidence: 99%

HgCdTe technology in Australia

2009

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In this paper a brief history of HgCdTe based research and development in Australia is presented. It describes some of the motivation behind decisions made in Australia related to the HgCdTe international research effort, the early stages of development of HgCdTe materials and device research in Australia, and main research activities in Australia over a period of twenty five years. Also presented are some of the major achievements and inevitable failures.

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Magneto-Transport Characterization of p-Type HgCdTe

Cited by 9 publications

References 9 publications

Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

HgCdTe technology in Australia

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