2020
DOI: 10.1007/s10948-020-05430-4
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Magneto Transport Anomaly of Bismuth Substituted (La, Na) MnO3

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Cited by 9 publications
(2 citation statements)
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“…This behavior may be associated with the quantum paraelectricity of the CTO. A CTO is a quantum paraelectric band insulator with a direct gap of 3.3 eV, where titanium ion is in 4 + valence state Ti 4+ :3d 0 with total spin S = 0 [25][26][27]. The results suggest a wide hysteresis loop with high coercivity and remanent magnetization for the CaMnO 3 compound, typical of ferromagnetic materials.…”
Section: Resultsmentioning
confidence: 99%
“…This behavior may be associated with the quantum paraelectricity of the CTO. A CTO is a quantum paraelectric band insulator with a direct gap of 3.3 eV, where titanium ion is in 4 + valence state Ti 4+ :3d 0 with total spin S = 0 [25][26][27]. The results suggest a wide hysteresis loop with high coercivity and remanent magnetization for the CaMnO 3 compound, typical of ferromagnetic materials.…”
Section: Resultsmentioning
confidence: 99%
“…However, due to the large electronegativity of bismuth, its 6s orbital hybridizes with O-2p orbital. This hybridization through polar covalent bond would hamper the movement of e g electron from one Mn site to the other resulting in electron localization around Bi 3+ ion [22,23]. The formation of localizations state will reflect as distortions in bismuth-substituted samples.…”
Section: Magnetismmentioning
confidence: 99%