Magneto-Seebeck effect in bismuth

Spathelf, Felix; Fauqué, Benoît; Behnia, Kamran

doi:10.1103/physrevb.105.235116

Cited by 4 publications

(1 citation statement)

References 45 publications

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“…Recent attention focuses on finding topologically non-trivial states both for the surfaces and the hinges of bismuth crystals [11][12][13][14][15][16][17][18][19][20] . Recent transport studies on macroscopic crystals have revealed a non-trivial variation of the magnetoresistance 21 and the Seebeck effect 22 with the amplitude and the orientation of the magnetic field. A robust boundary conductance emerges at quantizing magnetic field, which is yet to be understood 23 .…”

Section: Introductionmentioning

confidence: 99%

High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals

Ye,

Yamada,

Kinoshita

et al. 2024

npj Quantum Mater.

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Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complemented with Nernst, ultrasound, and magneto-optic data. All observed anomalies can be explained in a single-particle picture of a sample consisting of two twinned crystals tilted by 108° and with two adjacent crystals keeping their own chemical potentials despite a shift between chemical potentials as large as 68 meV at 65 T. This implies an energy barrier between adjacent twinned crystals reminiscent of a metal- semiconductor Schottky barrier or a p-n junction. We argue that this barrier is built by accumulating charge carriers of opposite signs across a twin boundary.

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Section: Introductionmentioning

confidence: 99%

High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals

Ye,

Yamada,

Kinoshita

et al. 2024

npj Quantum Mater.

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Influence of carrier doping on thermo- and galvano-magnetic effects of Bi88Sb12 alloys

Murata,

Nagase,

Aoyama

et al. 2023

Journal of Applied Physics

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In this study, the influence of carrier doping on the thermo- and galvano-magnetic effects of Bi–Sb alloys was investigated. Seven types of Bi88Sb12 alloys, namely, the undoped and 0.01, 0.02, and 0.04 at. % Te- and Sn-doped alloys, were fabricated via the spark plasma sintering method and solid phase reaction. The magnetic field dependencies of the diagonal resistivity, Hall resistivity, thermal conductivity, Seebeck thermopower, and Nernst thermopower were measured in the range of −5–5 T at 300 K, and the dimensionless figures of merit for the Seebeck and Nernst effects, i.e., the zST and zNT, respectively, were determined. As a result, both the zT values in the magnetic field were improved by the addition of a trace amount of Te. To better understand this behavior, a computational model that qualitatively describes the Seebeck, Nernst, magnetoresistance, and Hall effects, as well as the carrier thermal conductivity of Bi in the magnetic field, was developed based on the Boltzmann equation by considering the relaxation time approximation. The influence of carrier doping on the thermo-magnetic effect was considered by shifting the chemical potential with the rigid-band model in the established computational model. The computational results demonstrated that zST and zNT in the magnetic field were improved by shifting the chemical potential. These findings revealed that carrier doping could be a promising approach to improve the zT, namely, the zST for the Seebeck effect and zNT for the Nernst effect in Bi–Sb alloys in a magnetic field.

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Controllable Nernst and Seebeck effects in graphene with O-shaped Kekulé structure

Zhang,

Wang,

et al. 2023

Applied Physics Letters

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The Nernst and Seebeck effects in graphene with uniform Kekulé lattice distortion have been studied using the tight-binding model combined with the nonequilibrium Green's function method. Numerical results of this work showed that due to the electron–hole symmetry, the Nernst coefficient is an even function of the Fermi energy, while the Seebeck coefficient is an odd function regardless of the magnetic field. The Nernst and Seebeck coefficients show peaks when the Fermi energy crosses the Landau levels at high magnetic fields or crosses the transverse subbands at the zero magnetic fields. The peak height can be very large when the Fermi energy approaches the Dirac point, the Seebeck coefficient can reach about 0.78 mV/K, and the Nernst coefficient can reach about 0.95 mV/K at the corresponding hopping energy modification parameter δ=0.03 and T=0.009t/kB≈288 K. When δ=0.08 and T=0.024t/kB≈766 K, the Seebeck coefficient (or Nernst coefficient) is still up to about 0.78 mV/K (or 0.95 mV/K). This suggests that tunable Seebeck and Nernst coefficients can be achieved because the bandgap is a function of the corresponding hopping energy modification parameter δ. Experimentally, δ can be modulated by changing the type and amount of atoms adsorbed on graphene. In strong magnetic fields, the Nernst coefficient does not depend on the chirality of the nanoribbon.

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Magneto-Seebeck effect in bismuth

Cited by 4 publications

References 45 publications

High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals

High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals

Influence of carrier doping on thermo- and galvano-magnetic effects of Bi88Sb12 alloys

Controllable Nernst and Seebeck effects in graphene with O-shaped Kekulé structure

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