Magneto-optical properties of GaBiAs layers

Optical and spin properties of localized and free excitons in GaBixAs1−x/GaAs multiple quantum wells

“…III-V dilute bismide semiconductor material has attracted much attention in recent years due to its potential applications for near infrared wavelength photonics and spintronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. The incorporation of Bi has been shown to have a dramatic impact on the band structure of GaAs.…”

“…The incorporation of Bi has been shown to have a dramatic impact on the band structure of GaAs. A band gap reduction of around 90 meV per percent of Bi and a large increase of spin-orbit (SO) split-off energy have been observed [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This increase of spin-orbit interaction could suppress the non-radiative Auger recombination processes that affect the efficiency of lasers in the near infrared; it is also very attractive for semiconductor spintronics.…”

Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

“…Furthermore, due to the relatively large size of bismuth atoms, a strong deformation of the GaAs lattice occurs producing an increase of the carrier-phonon coupling [5]. However, incorporation of Bi into GaAs causes a strong effect on the carrier recombination processes due to an increase of the density of the localized states [6][7][8]. As a result of this effect, an extension of the band-edge toward lower energies, the so-called band-tail states is created [9].…”

Luminescent properties of GaAsBi/GaAs double quantum well heterostructures

“…While such losses are a common problem for telecommunication devices, utilization of GaAsBi alloys could benefit laser diodes operating in the 1.3-1.6 µm spectral range with improved operation efficiency and temperature insensitivity [9,12,18]. These and other applications have stimulated extensive recent studies of dilute bismides [19][20][21][22][23][24][25][26][27][28][29][30]. They could make use of high quality GaAs 1-x Bi x /GaAs separate confinement heterostructures [14,31,32] and multiple quantum wells [31,[33][34][35][36][37] in the active regions.…”