Magneto-optical measurements of the negatively charged 
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 exciton in 
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Sell, Julia; Vannucci, J. R.; Suárez-Forero, D. G.; Cao, Bingchen; Session, Deric; Chuang, Hsun-Jen; McCreary, Kathleen M.; Rosenberger, Matthew R.; Jonker, B. T.; Mittal, Sanjiv; Hafezi, Mohammad

doi:10.1103/physrevb.106.l081409

Cited by 2 publications

(1 citation statement)

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“…states. Although excitonic states of the s-type are observable in the linear optical spectra of S-TMD MLs, i.e., photoluminescence [4][5][6][7][8], transmission [9][10][11], and reflectance contrast [6,12,13], the excitonic states of the p-and d-types can be seen in nonlinear experiments performed on S-TMD MLs, i.e., second harmonic generation or two-photon absorption [14][15][16][17]. It turns out that the energy spectrum of s-type states in these atomically-thin semiconductors does not reproduce the conventional Rydberg series of a 2D hydrogen atom [18,19].…”

Section: Introductionmentioning

confidence: 99%

Exciton spectrum in atomically thin monolayers: The role of hBN encapsulation

Slobodeniuk¹,

Molas²

2023

Preprint

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The high-quality structures containing semiconducting transition metal dichalcogenides (S-TMDs) monolayer (MLs) required for optical and electrical studies are achieved by their encapsulation in hexagonal BN (hBN) flakes. To examine the effect of hBN thickness in these systems, we consider a model with an S-TMD ML placed between a semi-infinite in the out-of-plane direction substrate and complex top cover layers: a layer of finite thickness, adjacent to the ML, and a semi-infinite in the out-of-plane direction top part. We obtain the expression for the Coulomb potential for such a structure. Using this result we demonstrate that the energies of excitonic s states in the structure with WSe2 ML change significantly for the top hBN with thickness <30 layers. We observed that the excitonic binding energy (E b ) is reduced by almost 40% in the transition from the sample without the top hBN layer (E b =256 meV) to the one with an infinite thickness of the top hBN layer (E b =165 meV).

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