Magneto-optical and transport studies of ZnO-based dilute magnetic semiconductors

Behan, A.J.; Neal, James R.; Ibrahim, Ragheed M.; Mokhtari, Abbas; Ziese, M.; Blythe, H. J.; Fox, A. M.; Gehring, G. A.

doi:10.1016/j.jmmm.2006.11.024

Cited by 11 publications

(10 citation statements)

References 10 publications

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“…7 as a function of Fe concentration with characteristic features near 2.0 eV and 3.2 eV. The feature above ß3 eV is characteristic of oxide magnetism occurring under the band gap [10,27,36] and arises from transitions to gap states localized either on oxygen vacancies or on grain boundaries.…”

Section: Magneto-optical Propertiesmentioning

confidence: 99%

Magnetic properties ofIn2O3containingFe3O4nanoparticles

et al. 2014

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Films of Fe-doped In 2 O 3 that were deliberately fabricated so they contained Fe 3 O 4 nanoparticles were deposited on sapphire substrates by pulsed laser deposition at low oxygen pressure. The concentration of Fe was varied between 1% and 5%, and the effect of including 5% of Sn and vacuum annealing were also investigated. Structural analysis indicated a high concentration of Fe 3 O 4 nanoparticles that caused substantial values of the coercive field at room temperature. Transport measurements indicated that the films were metallic, and an anomalous Hall effect was observed for the sample with 5% of Fe. The concentration of nanoparticles was reduced dramatically by the inclusion of 5% of Sn. Magnetic circular dichroism spectra taken in field and at remanence were analyzed to show that the samples had a magnetically polarized defect band located below the conduction band as well as magnetic Fe 3 O 4 nanoparticles. The signal from the defect states near the band edge was enhanced by increasing the number of carriers by either including Sn or by annealing in vacuum.

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Section: Magneto-optical Propertiesmentioning

confidence: 99%

Magnetic properties ofIn2O3containingFe3O4nanoparticles

et al. 2014

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“…Zinc oxide (ZnO) [3] is one of the most extensively studied materials as an alternative photo anode to TiO 2 [4].ZnO thin film has high transparency [5], piezoelectricity [6], room-temperature ferromagnetism [7], and huge magneto-optic [8] effect , it can be grown into many different nanoscale forms, thus allowing various novel devices to be achieved , also doping can improved some proprieties of ZnO [9], like conductivity which may change at will from metallic to insulting (including n-type and p-type conductivity. It has wide band gap energy of 3.37 eV, high exciton binding energy of 60 meV, a wide range resistivity, high electron Hall mobility (200 cm2.V.s −1 ) and high transparency at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Effect of Zn Concentration On Structural and Optical Proprieties Of ZNO Thin Films Deposited By Spray Pyrolysis.

Alami¹,

Salem²,

Gaidi³

2015

AEIJ

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ZnO thin film were deposited by spray pyrolysis on glass substrates, using zinc nitrate as precursor with different molar concentrations varying from 0.05M to 0.2 M. To study the structural proprieties of the film , the different technique was used as the X-ray diffraction, atomic force microscopy (AFM), Raman scattering , and FTIR. The optical properties were explored by transmission, reflectivity and Photoluminescence techniques. The ZnO thin films obtained in this paper are polycrystallines, the grain size increases when the molar concentration of Zn precursor was increasing. The films are transparent in visible region, this transmission values decreases when the molar concentration increase caused by the increasing of surface roughness

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“…Consequently, the high Curie temperature ferromagnetism of ZnO and related materi-als, doped with transition metal (TM) ions, is also expected to have applications in spintronics, including in information storage and data-processing devices [56]. The electronic, optical and magnetic properties of TM-doped ZnO and related materials have been studied extensively [57][58][59][60][61][62][63][64]. However, the behavior and characteristics of ZnO optoelectronic devices in a magnetic field have seldom been investigated.…”

Section: Zno/sio 2 /Si Uv Photodiodesmentioning

confidence: 99%

Si-Based ZnO Ultraviolet Photodiodes

Chen¹

2012

Photodiodes - From Fundamentals to Applications

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We are IntechOpen, the first native scientific publisher of Open Access books 12.2%108,000 1.7 M TOP 1% 151 3,350Chapter 6 Si-Based ZnO Ultraviolet Photodiodes Lung-Chien ChenAdditional information is available at the end of the chapter http://dx.doi.org/10.5772/48825 . IntroductionSemiconductor-based ultraviolet UV photodiodes have been continuously developed that can be widely used in various commercial, civilian areas, and military applications, such as optical communications, missile launchinμ detection, ame detection, UV radiation calibration and monitorinμ, chemical and bioloμical analysis, optical communications, and astronomical studies, etc. [ -]. All these applications require very sensitive devices with hiμh responsivity, λast response time, and μood siμnal-to-noise ratio is common desirable characteristics. Currently, liμht detection in the UV spectral ranμe still uses Si-based optical photodiodes. Due to the Si-based photodiodes are sensitive to visible and inλrared radiation, the responsivity in the UV reμion is still low [ -]. To avoid these disadvantaμes, wide-bandμap materials such as diamond, SiC, III-nitrides and wide-bandμap II-VI materials are under intensive studies to improve the responsivity and stability oλ UV photodiodes, because oλ their intrinsic visible-blindness [ ].Amonμ them, zinc oxide ZnO is another wide direct bandμap material due to its sensitive and UV photoresponse in the UV reμion [ -]. ZnO has attracted attention as a promisinμ material λor optical devices, owinμ to its larμe direct band μap enerμy oλ . eV and a larμe exciton bindinμ enerμy oλ meV at room temperature compared to other II-VI semiconductors [ -]. Thereλore, ZnO is promisinμ λor use in liμht-emittinμ diodes LEDs , laser diodes LDs , ultraviolet UV detection devices [ -]. Several deposition methods have been employed λor the μrowth oλ ZnO layers, includinμ metal-orμanic chemical vapor deposition MOCVD , molecular beam epitaxy MBE , pulsed laser deposition PLD , sol-μel and spray pyrolysis [ -]. The synthesis oλ p-type ZnO λilms with acceptable stability and reproduci-

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Magneto-optical and transport studies of ZnO-based dilute magnetic semiconductors

Cited by 11 publications

References 10 publications

Magnetic properties ofIn2O3containingFe3O4nanoparticles

Magnetic properties ofIn2O3containingFe3O4nanoparticles

Effect of Zn Concentration On Structural and Optical Proprieties Of ZNO Thin Films Deposited By Spray Pyrolysis.

Si-Based ZnO Ultraviolet Photodiodes

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