Magneto-optical and thermo-optical modulations of Goos-Hänchen effect in one-dimensional photonic crystal with graphene-VO2

Yu, Bo; Tang, Tingting; Wang, Rui; Qiao, Shaojie; Li, Yuanxun; Li, Chaoyang; Shen, Jian; Huang, Xiaolei; Cao, Yang

doi:10.1016/j.jmmm.2021.167946

Cited by 13 publications

(7 citation statements)

References 24 publications

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“…In another study, Zhang et al created a 1D PhC structure with a VO 2 layer sandwiched between Ge and ZnS layers to realize the temperature-dependent infrared emitting effect [47]. In a 1D photonic superlattice using graphene-VO 2 , Yu et al, investigated the thermo-optical modulations of the Goos-Hänchen phenomenon to study the temperature modulation [48]. Switchable NIR absorption with a 1D PhC in the phase transition of VO 2 nanoparticles was explored by Rashidi et al, for multichannel absorbers [49].…”

Section: Introductionmentioning

confidence: 99%

Photonic bandgap engineering in (VO₂)_n/(WSe₂)_n photonic superlattice for versatile near- and mid-infrared phase transition applications

Basyooni¹,

Zaki²,

Tihtih³

et al. 2022

J. Phys.: Condens. Matter

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The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition (MIT) near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO2) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO2 as a strongly correlated phase transition material and tungsten diselenide (WSe2) as a 2-dimensional transition metal dichalcogenide (TMD) layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO2 with WSe2 in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO2 layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO2 thickness. For the monoclinic case of VO2, the number of the forbidden bands increases with the number of layers of WSe2. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.

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Section: Introductionmentioning

confidence: 99%

Photonic bandgap engineering in (VO₂)_n/(WSe₂)_n photonic superlattice for versatile near- and mid-infrared phase transition applications

Basyooni¹,

Zaki²,

Tihtih³

et al. 2022

J. Phys.: Condens. Matter

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“…Since the THz wavelength is 2-3 orders of magnitude longer than that of the visible wavelength, it is easier to observe Goos-Hänchen and Imbert-Fedorov shifts in the THz region. Some striking materials, such as metamaterials [79,80], 2D materials [81,82], and photonic crystals [83,84] etc, have been proposed to effectively understand Goos-Hänchen and Imbert-Fedorov shifts. However, in order to manipulate the intensity and the direction of these shifts, designable hybrid interfaces must be considered.…”

Section: Thz Wave Goos-hänchen and Imbert-fedorov Shifts At Interfacesmentioning

confidence: 99%

Terahertz interface physics: from terahertz wave propagation to terahertz wave generation

Du¹,

Huang²,

Zhou³

et al. 2022

J. Phys. D: Appl. Phys.

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Terahertz (THz) interface physics as a new interdiscipline between THz technique and condensed matter physics has undergone rapid developments in recent years. Especially, the developments of advanced materials, such as graphene, transitional metal dichalcogenides, topological insulators, ferromagnetic metals, and metamaterials, have revolutionized the interface field and further promotes the development of THz functional devices based on interface physics. Moreover, playing at the interface with these advanced materials could unveil a wealth of fascinating physical effects such as charge transfer, proximity effect, inverse spin-Hall effect, and Rashba effect with THz technology by engineering the charge, spin, orbit, valley, and lattice degrees of freedom. In this review, we start from the discussion of the basic theory of THz interface physics, including interface formation with advanced materials, THz wave reflection and transmission at the interface, and band alignment and charge dynamics at the interface. Then we move to recent progresses in advanced materials from THz wave propagation to THz wave generation at the interface. In the THz wave propagation, we focus on the THz wave impedance-matching, Goos–Hänchen and Imbert–Fedorov shifts in THz region, interfacial modulation and interfacial sensing based on THz wave. In the THz wave generation, we summarize the ongoing coherent THz wave generation from van der Waals interfaces, multiferroic interfaces, and magnetic interfaces. The fascinating THz interface physics in advanced materials is promising and promoting novel THz functional devices for manipulating the propagation and generation of THz wave at the interfaces.

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“…[27] Furthermore, the interfacial coupling between plasmonic and magnetic components becomes an intriguing direction toward nanophotonic device integration. Such magneto-optical (MO) coupling has been demonstrated in graphene/VO 2 and [Pt/Co] 2 /VO 2 /[Co/Pt] 2 , [28,29] whereas the exploration on FM materials/VO 2 systems with the goals of T c tuning and magnetic incorporation is lacking.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Ni‐Nanoinclusions in VO₂ Thin Films for Broad Tuning of Phase Transition Properties

He,

Jian,

Quigley

et al. 2023

Advanced Physics Research

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Mott insulator VO2 exhibits an ultrafast and reversible semiconductor‐to‐metal transition (SMT) near 340 K (67 °C). In order to fulfill the multifunctional device applications, effective transition temperature (Tc) tuning as well as integrated functionality in VO2 is desired. In this study, multifunctionalities including tailorable SMT characteristics, ferromagnetic (FM) integration, and magneto‐optical (MO) coupling, have been demonstrated via metal/VO2 nanocomposite designs with controlled morphology, i.e., a two‐phase Ni/VO2 pillar‐in‐matrix geometry and a three‐phase Au/Ni/VO2 particle‐in‐matrix geometry. Evident Tc reduction of 20.4 to 54.9 K has been achieved by morphology engineering. Interestingly, the Au/Ni/VO2 film achieves a record‐low Tc of 295.2 K (22.2 °C), slightly below room temperature (25 °C). The change in film morphology is also correlated with unique property tuning. Highly anisotropic magnetic and optical properties have been demonstrated in Ni/VO2 film, whereas Au/Ni/VO2 film exhibits isotropic properties because of the uniform distribution of Au/Ni nanoparticles. Furthermore, a strong MO coupling with enhanced magnetic coercivity and anisotropy is demonstrated for both films, indicating great potential for optically active property tuning. This demonstration opens exciting opportunities for the VO2‐based device implementation towards smart windows, next‐generation optical‐coupled switches, and spintronic devices.

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Magneto-optical and thermo-optical modulations of Goos-Hänchen effect in one-dimensional photonic crystal with graphene-VO2

Cited by 13 publications

References 24 publications

Photonic bandgap engineering in (VO₂)_n/(WSe₂)_n photonic superlattice for versatile near- and mid-infrared phase transition applications

Photonic bandgap engineering in (VO₂)_n/(WSe₂)_n photonic superlattice for versatile near- and mid-infrared phase transition applications

Terahertz interface physics: from terahertz wave propagation to terahertz wave generation

Magnetic Ni‐Nanoinclusions in VO₂ Thin Films for Broad Tuning of Phase Transition Properties

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Magneto-optical and thermo-optical modulations of Goos-Hänchen effect in one-dimensional photonic crystal with graphene-VO2

Cited by 13 publications

References 24 publications

Photonic bandgap engineering in (VO2) n /(WSe2) n photonic superlattice for versatile near- and mid-infrared phase transition applications

Photonic bandgap engineering in (VO2) n /(WSe2) n photonic superlattice for versatile near- and mid-infrared phase transition applications

Terahertz interface physics: from terahertz wave propagation to terahertz wave generation

Magnetic Ni‐Nanoinclusions in VO2 Thin Films for Broad Tuning of Phase Transition Properties

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Product

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Photonic bandgap engineering in (VO₂)_n/(WSe₂)_n photonic superlattice for versatile near- and mid-infrared phase transition applications

Photonic bandgap engineering in (VO₂)_n/(WSe₂)_n photonic superlattice for versatile near- and mid-infrared phase transition applications

Magnetic Ni‐Nanoinclusions in VO₂ Thin Films for Broad Tuning of Phase Transition Properties