Magneto-optical absorption spectrum of a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="italic">D</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">−</mml:mi></mml:mrow></mml:msup></mml:mrow></mml:math>ion in a GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.75</mml:mn></mml:mrow></mml:msub></

Fujito, Masamichi; Natori, Akiko; Yasunaga, Hitoshi

doi:10.1103/physrevb.51.4637

Cited by 12 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The semiconductor heterostructures GaAs/Ga 0.75 Al 0.25 As are good for investigation of MI states. In these structures the effective mass of carriers is isotropic, and the barrier height between the layers is ∼ 200 meV [7]. Therefore, the changing of the potential at the layer boundaries by infinite is correct.…”

Section: Discussionmentioning

confidence: 94%

Particle in short-range potential in two dimensional structure in magnetic field

Andreev¹,

Павлова²

2006

Laser Phys. Lett.

View full text Add to dashboard Cite

An exact solution is given for the problem of determining the ground state of a charge particle in a zero range force field located in a quantum well and in a magnetic field. The dependence of the electron's ground state on the potential depth and the magnetic field is investigated in a semiconductor layer of an arbitrary width. In particular, it is shown that in the twodimensional case the bound state exists in potential at the definite relation between the scattering length, the magnetic length, and the layer width, in contrast to the three-dimensional case, where the bound state always exists in an arbitrary potential in the magnetic field.

show abstract

Section: Discussionmentioning

confidence: 94%

Particle in short-range potential in two dimensional structure in magnetic field

Andreev¹,

Павлова²

2006

Laser Phys. Lett.

View full text Add to dashboard Cite

show abstract

Numerical study of spin effects in single and double quantum dots

Tamura

1998

Physica B: Condensed Matter

View full text Add to dashboard Cite

Negatively charged donors in semiconductor quantum wells in the presence of longitudinal magnetic and electric fields

Dacal

Brum

2002

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We present variational calculations of the binding energy for negatively charged donors in GaAs/Al 0.3 Ga 0.7 As quantum wells. We show that the electronic quantum well ground state and parabolic energy dispersions are enough to obtain accurate results compared with previous Monte Carlo calculations. The configuration interaction method is used with a physically meaningful basis set. We study the charged donor binding energy dependence on the quantum well width and donor position in the presence of external electric and magnetic fields.

show abstract

Magneto-optical absorption spectrum of aD−ion in a GaAs-Ga0.75

Cited by 12 publications

References 14 publications

Particle in short-range potential in two dimensional structure in magnetic field

Particle in short-range potential in two dimensional structure in magnetic field

Numerical study of spin effects in single and double quantum dots

Negatively charged donors in semiconductor quantum wells in the presence of longitudinal magnetic and electric fields

Contact Info

Product

Resources

About