Magnetization reorientation induced by interfacial structures in ultrathin disordered FePt film sandwiched by SiO2 layers

Yang, Guang; Zhang, Jingyan; Wang, Shouguo; Jiang, Shaolong; Zhao, Yuzhen; Ma, Qidi; Wang, Chao; Dong, Bin; Liu, Jia-Long; Zhang, Ying; Sun, Young; Wu, Zhenglong; Yu, Guo

doi:10.1016/j.apsusc.2015.06.134

Cited by 6 publications

(1 citation statement)

References 28 publications

(30 reference statements)

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“…In theory, first-principles calculation has been used to study the FM/Oxide interface, showing that the interfacial magnetic anisotropy is strongly affected by the hybridization between FM-3d and O-2p orbits [18,19]. In addition, previous researches have reported that the orbital hybridization between FM and oxide is sensitive to the annealing process [20,21]. By annealing, the activated oxygen atoms could migrate to the interface, producing a bonding between FM atoms and oxygen atoms.…”

Section: Resultsmentioning

confidence: 99%

Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers

Yang

Chen

et al. 2016

Advances in Condensed Matter Physics

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Ultrahigh anomalous Hall sensitivity has been demonstrated in Ta/CoFe/Oxide/Ta multilayers. By changing oxides (MgO and HfO2) and annealing temperature, different annealing dependence of sensitivity was found in MgO-sample and HfO2-sample. For the MgO-sample, the anomalous Hall sensitivity reaches 18792 Ω/T in the as-deposited state and significantly reduces as annealing temperature increases. On the contrary, the sensitivity of the as-deposited HfO2-sample is only 765 Ω/T, while it remarkably increases with annealing temperature increasing, finally reaching 14741 Ω/T at 240°C. The opposite variation of anomalous sensitivity in two samples originates from the different change of magnetic anisotropy and anomalous Hall resistance during the annealing process. Our study provides a new perspective that both the choice of oxide material and the optimization of annealing treatment are important to the anomalous Hall sensitivity.

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