Magnetism of compounds with a layered crystal structure

Баранов, Н. В.; Gerasimov, E. G.; Мушников, Н. В.

doi:10.1134/s0031918x11070039

Cited by 24 publications

(17 citation statements)

References 90 publications

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“…Kagome layers are known for unusual magnetic behavior due to geometric frustration and the role of spin-orbit coupling via the DM interaction. All known hexagonal R166 compounds possess FM kagome layers with an easy-plane Mn magnetic anisotropy which minimizes the role of intralayer geometric frustration [37]. However, the competition between Mn-Mn FM and AF interlayer magnetic interactions is known to cause magnetic instabilities in Y166 that lead to complex helical phases [12,14].…”

Section: Minimal Heisenberg Model For the Spin Excitationsmentioning

confidence: 99%

Competing magnetic energy scales in the topological flat-band ferrimagnet TbMn6Sn6

Riberolles¹,

Slade²,

Abernathy³

et al. 2021

Preprint

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TbMn6Sn6 is a metallic ferrimagnet displaying signatures of Weyl-semimetallic behavior and topological magnons arising from flat-band magnetism and spin-orbit coupling within its Mn kagome layers. Inelastic neutron scattering measurements find strong ferromagnetic (FM) interactions within the Mn kagome layer and reveal a magnetic bandwidth of ∼ 230 meV. The low-energy magnetic excitations are characterized by strong FM Mn-Mn and antiferromagnetic (AF) Mn-Tb interlayer magnetic couplings. We observe weaker, competing long-range FM and AF Mn-Mn interlayer interactions similar to those driving helical magnetism in the YMn6Sn6 system. Combined with density-functional theory calculations, we find that competing Mn-Mn interlayer magnetic interactions occur in all RMn6Sn6 compounds with R = Y, Gd−Lu, resulting in magnetic instabilities and tunability when Mn-R interactions are weak. In the case of TbMn6Sn6, strong AF Mn-Tb coupling ensures a highly stable three-dimensional ferrimagnetic network.

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Section: Minimal Heisenberg Model For the Spin Excitationsmentioning

confidence: 99%

Competing magnetic energy scales in the topological flat-band ferrimagnet TbMn6Sn6

Riberolles¹,

Slade²,

Abernathy³

et al. 2021

Preprint

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“…13 On the other hand, the physics of magnetic frustration and spin liquid in metallic systems is relatively unexplored, largely due to a lack of model systems. For instance, in the wellexplored RMn 6 X 6 (R = rare earth ion, X = Sn, Ge) family 14 with Mn Kagome nets, all members order magnetically with relatively high transition temperatures. Magnetic frustration suppresses magnetic order via competing interactions, and so conversely the observation of magnetic order at high temperatures implies that frustration is ineffectual in these compounds.…”

Section: ■ Introductionmentioning

confidence: 99%

New Kagome Metal Sc₃Mn₃Al₇Si₅ and Its Gallium-Doped Analogues: Synthesis, Crystal Structure, and Physical Properties

Miiller

Aronson

2014

Inorg. Chem.

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We report the synthesis, crystal structure, and basic properties of the new intermetallic compound Sc3Mn3Al7Si5. The structure of the compound was established by single-crystal X-ray diffraction, and it crystallizes with a hexagonal structure (Sc3Ni11Si4 type) with Mn atoms forming the Kagome nets. The dc magnetic susceptibility measurements reveal a Curie-Weiss moment of ~0.51 μ(B)/Mn; however, no magnetic order is found for temperatures as low as 1.8 K. Electrical resistivity and heat capacity measurements show that this compound is definitively metallic, with a relatively large specific heat Sommerfeld coefficient, indicating strong electronic correlations. Intriguingly, these features have revealed Sc3Mn3Al7Si5 as a possible quantum spin liquid. With chemical and lattice disorder introduced by doping, a spin liquid to spin glass transition is observed in the highest Ga-doped compounds. The roles of the geometrically frustrated structure and Mn-ligand hybridization in the magnetism of the title compounds are also discussed.

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“…1(a). The Fe atoms are intercalated in the vdW gap of the TaS 2 crystals and maintain 2H-type layer stacking [17]. The material properties of Fe x TaS 2 are well known in its bulk form, where Fe x TaS 2 shows ferromagnetic ordering accompanied by strong perpendicular magnetic anisotropy when x ranges between 0.15 and 0.45 [18,19].…”

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confidence: 99%

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Arai

Moriya

Yabuki

et al. 2015

Applied Physics Letters

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We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe 0.25 TaS 2 . The vdW interlayer coupling at the Fe-intercalated plane of Fe 0.25 TaS 2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction.*E-mail: moriyar@iis.u-tokyo.ac.jp; tmachida@iis.u-tokyo.ac.jp 2 Recently, studies on two-dimensional (2D) materials such as graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenides (TMDs) have received considerable attention [1,2]. These materials exhibit layered structure in the bulk form, and the van der Waals (vdW) force connects each of the layers. Thus, these crystals can easily be exfoliated down to monolayer and used to construct heterostructures of different 2D materials connected by vdW force [3]. Metal, semiconductor, and insulator 2D materials have been studied, and various functional electronics and opto-electronics devices have been demonstrated with these materials [4][5][6][7]. Further, these 2D materials could be potentially applied in the field of spintronics [8]; for example, long-distance spin transport has been demonstrated in graphene/h-BN heterostructures [9], and spin polarized tunneling has been demonstrated through graphene [10] and h-BN [11,12]. In these experiments, the source for the spin-polarized electrons is a ferromagnetic metal fabricated by the evaporation technique; thus, the interface between the ferromagnetic and non-magnetic materials involves chemical bonding. On the other hand, the vdW interface does not require any chemical bonding at the junction, in principle. Therefore, layered ferromagnetic 2D materials could possibly be used for constructing vdW heterostructures with spintronic functions. Moreover, the vdW hetrostructure could provide another degree of freedom that has not been possible in the conventional spintronics device; such as controlling the interlayer twist [13,14] In Fig. 1(c), optical micrographs of the exfoliated flake and their vdW junction are shown. The area of vdW junction is 67.8 µm 2 . The quality of the vdW interface is analyzed using cross-sectional transmission electron microscopy (TEM), as shown in Fig. 1(d). The TEM image revealed the layered structure of each Fe 0.25 TaS 2 flake with a stacking period of 0.61 nm; this period is close to the reported value for the bulk material [18]. The vdW contact between the flakes is clearly visible in the TEM image [ Fig. 1(d)].The TEM reveals that vdW junction displays different TEM contrast from the flake; this behavior is attributed to the presence of a native oxide layer existing at the surface of cleaved Fe 0.25 TaS 2 . The presence of Ta 2 O 5 oxide layer in the topmost layer of the exfoliated Fe 0.25 TaS 2 surface i...

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Magnetism of compounds with a layered crystal structure

Cited by 24 publications

References 90 publications

Competing magnetic energy scales in the topological flat-band ferrimagnet TbMn6Sn6

Competing magnetic energy scales in the topological flat-band ferrimagnet TbMn6Sn6

New Kagome Metal Sc₃Mn₃Al₇Si₅ and Its Gallium-Doped Analogues: Synthesis, Crystal Structure, and Physical Properties

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

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Magnetism of compounds with a layered crystal structure

Cited by 24 publications

References 90 publications

Competing magnetic energy scales in the topological flat-band ferrimagnet TbMn6Sn6

Competing magnetic energy scales in the topological flat-band ferrimagnet TbMn6Sn6

New Kagome Metal Sc3Mn3Al7Si5 and Its Gallium-Doped Analogues: Synthesis, Crystal Structure, and Physical Properties

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

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Product

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New Kagome Metal Sc₃Mn₃Al₇Si₅ and Its Gallium-Doped Analogues: Synthesis, Crystal Structure, and Physical Properties