Magnetism and luminescence evolution due to nitrogen doping in manganese–gallium oxide nanowires

Selective Growth of Straight and Zigzagged Ga1-xMnxN (0 ≤ x ≤ 0.05) Nanowires and Dependence of Their Electronic Structure and Magnetization on the Mn Content

“…The present Mn-doped GaN NWs exhibit ferromagnetic properties, as in the case of the previously reported ferromagnetic Mn-doped GaN nanowires/nanorods, and this will be discussed below (Section 3.5). − For the room-temperature ferromagnetic Co-doped ZnO (Zn 1- x Co x O, x = 0.020, 0.056, and 0.098) nanoparticles reported by Xu and co-workers, there was a strong correlation between the XPS peak position and the saturation magnetic moment . The shift of the Zn 2p core-level to a high-energy region was maximized for x = 0.056, showing the same trend as the saturation magnetic moment.…”

“…In particular, well-defined single-crystalline 1D nanostructures enable us to scrutinize precisely the magnetic properties and electronic structures of DMSs depending on their crystal structure and Mn-doping levels. There have been a number of reports on the synthesis of room-temperature ferromagnetic Mn (≤9%)-doped GaN nanorods/nanowires. − Their growth direction was either [101̄0] or [0001], determined by the growth conditions. To understand fully the magnetic properties, it is probably important to investigate its dependence on the growth direction.…”

MnGa2O4 and Zn-doped MnGa2O4 1-Dimensional Nanostructures

“…As has been reported for the bulk, the origin of the antiferromagnetic nature below 33 K could be associated with the Mn 3+ ions at the octahedral sites . In contrast, the ferromagnetic behaviors of the nanowires was reported by Yu and co-workers . The paramagnetic behaviors of the present nanowires would be caused by the typical nanosize effect that the magnetic transition temperature usually decreases as the size of nanocrystals decreases.…”

Ni-doped zinc oxide nanocombs and phonon spectra properties

“…Wang and co-workers [4,5] have synthesized ZnO nanocantilevers. As far as we know, doping in semiconductor with selective elements offers an effective approach to adjust the electrical, optical, and magnetic properties, which is crucial for practical applications [11][12][13][14][15][16][17][18][19][20]. Recently, Wang's [20] and Yang's [11,12] research groups, as well as our group [1,[15][16][17][18][19] have reported on doping ZnO nanowires and tunable their physical properties.…”