Magnetic tunnel sensors with Co-Cu artificial antiferromagnetic (AAF) hard subsystem

Berg, Holger; Altmann, J.; Bär, L.; Gieres, G.; Kinder, R.; Rupp, G.; Vieth, M.; Wecker, J.

doi:10.1109/20.801016

Cited by 25 publications

(14 citation statements)

References 5 publications

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“…The M͑H͒ curve shows a well-defined anisotropy and a good antiparallel alignment during the magnetization reversal of the net moment of the AFi. 2,14 The coupling does not change signifi-cantly with annealing up to temperatures of 300-350°C. Using M 1,2 = 860± 50 kA/ m, as determined from alternating gradient magnetometer measurement of the single CoFeB layer with 6 nm thickness we calculate the coupling energy J = − 0 H sat M 1 t 1 M 2 t 2 / ͑M 1 t 1 + M 2 t 2 ͒.…”

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confidence: 97%

Antiferromagnetically coupled CoFeB∕Ru∕CoFeB trilayers

Wiese

Dimopoulos

Rührig

et al. 2004

Applied Physics Letters

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This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x = 1.0 to 1.1 nm. We have studied the switching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and found that the coercivity depends on the net magnetic moment, i.e. the thickness difference of the two CoFeB layers. The antiferromagnetic coupling is almost independent on the annealing temperatures up to 300 • C while an annealing at 350 • C reduces the coupling and increases the coercivity, indicating the onset of crystallization. Used as a soft electrode in a magnetic tunnel junction, a high tunneling magnetoresistance of about 50%, a well defined plateau and a rectangular switching behavior is achieved.

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confidence: 97%

Antiferromagnetically coupled CoFeB∕Ru∕CoFeB trilayers

Wiese

Dimopoulos

Rührig

et al. 2004

Applied Physics Letters

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“…2,3 The TMR is based on spin polarized tunneling of electrons between two ferromagnetic electrodes separated by an insulator. The insulating barrier must be very thin, typically 1-3 nm, in order to increase the TMR effect.…”

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confidence: 99%

Oxide thickness mapping of ultrathin Al2O3 at nanometer scale with conducting atomic force microscopy

Olbrich

Ebersberger

Boit

et al. 2001

Applied Physics Letters

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In this work, we introduce conducting atomic force microscopy (C-AFM) for the quantitative electrical characterization of ultrathin Al2O3 films on a nanometer scale length. By applying a voltage between the AFM tip and the conductive Co substrate direct tunneling currents in the sub pA range are measured simultaneously to the oxide surface topography. From the microscopic I–V characteristics the local oxide thickness can be obtained with an accuracy of 0.03 nm. A conversion scheme was developed, which allows the calculation of three-dimensional maps of the local electrical oxide thickness with sub-angstrom thickness resolution and nanometer lateral resolution from the tunneling current images. Local tunneling current variations of up to three decades are correlated with the topography and local variations of the electrical oxide thickness of only a few angstroms.

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“…Magnetic tunnel junctions (MTJ) have gained considerable interest in recent years due to their high potential as sensor elements (1) and as programmable resistance in data storage (MRAM) (2) or even data processing (3). The basic design of a spin valve consists of a hard magnetic reference electrode separated from the soft magnetic sense or storage layer by a tunnel barrier like Al 2 O 3 .…”

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confidence: 99%

Magnetic properties of antiferromagnetically coupled CoFeB/Ru/CoFeB

Wiese

Dimopoulos

Rührig

et al. 2005

Journal of Magnetism and Magnetic Materials

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This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost independent on the annealing temperature up to more than 300 • C. An annealing at more than 325 • C significantly increases the coercivity, Hc, indicating the onset of crystallization.

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Magnetic tunnel sensors with Co-Cu artificial antiferromagnetic (AAF) hard subsystem

Cited by 25 publications

References 5 publications

Antiferromagnetically coupled CoFeB∕Ru∕CoFeB trilayers

Antiferromagnetically coupled CoFeB∕Ru∕CoFeB trilayers

Oxide thickness mapping of ultrathin Al2O3 at nanometer scale with conducting atomic force microscopy

Magnetic properties of antiferromagnetically coupled CoFeB/Ru/CoFeB

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