Magnetic thin films in recording technology

Speriosu, V. S.; Herman, D. A.; Yogi, T.; Sanders, I.L.

doi:10.1147/rd.346.0884

Cited by 56 publications

(17 citation statements)

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“…As mentioned above, the initial increase in H C without biasing at t AF = 3 nm indicates that AF order is already established and that certain fraction of frustrated spins in the FeMn rotates reversibly with the FM magnetization during the measurement of a hysteresis loop. The increase in H C close to the AF thickness for onset of biasing could alternatively be attributed to imperfections in the AF, e.g., embedded impurities or crystal defects, irreversible transitions of grains, 38 to pinning the partial wall formed in the AF, 36 interfacial magnetic frustration, 39 or to regions with locally different blocking temperatures 40 depending on t AF . Despite that FeMn is already behaving as an AF, at t AF = 3 nm it is still not capable to accommodate a planar domain wall, resulting in zero field shift.…”

Section: Fig 3 ͑Color Online͒ Af Thickness Dependencies Of the Expementioning

confidence: 99%

Discrimination between coupling and anisotropy fields in exchange-biased bilayers

Geshev

Nicolodi

Silva

et al. 2009

Journal of Applied Physics

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In the framework of models that assume planar domain wall formed at the antiferromagnetic part of the interface of exchange-biased bilayers, one cannot distinguish between the cases of high or low ratios between the coupling and the antiferromagnet's anisotropy fields by using hysteresis loop measurement, ferromagnetic resonance, anisotropic magnetoresistance, or ac susceptibility techniques applied on one and the same sample. The analysis of the experimental data obtained on a series of FeMn/Co films indicated that once the biasing is established the variation in the coercivity with the FeMn layer thickness could be essential for solving this problem. If the coercivity decreases with the thickness then the interlayer exchange coupling is the parameter that varies while the domain-wall energy of the antiferromagnet remains practically constant.

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Section: Fig 3 ͑Color Online͒ Af Thickness Dependencies Of the Expementioning

confidence: 99%

Discrimination between coupling and anisotropy fields in exchange-biased bilayers

Geshev

Nicolodi

Silva

et al. 2009

Journal of Applied Physics

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“…1 Recently, the interest in this effect revived, 2-5 due its application in magneto-resistive sensors. 6 Still, the microscopic origin of this effect is poorly understood. In the extensively studied Ni-Fe/Fe-Mn system the magnitude of the loop shift or bias field, H eb , is smaller by more than two orders of magnitude than calculated according to the original interpretation.…”

Section: Introductionmentioning

confidence: 99%

“…In the extensively studied Ni-Fe/Fe-Mn system the magnitude of the loop shift or bias field, H eb , is smaller by more than two orders of magnitude than calculated according to the original interpretation. 4,6 In this interpretation the biasing is caused by a unidirectional anisotropy arising from nearest-neighbor exchange coupling across a perfectly flat interface which is magnetically uncompensated at the AF side. 1 If the ferromagnet is made single domain by a large applied field above T N of the AF component, field cooling through T N results in alignment of the AF interface spins to the aligned F interface spins.…”

Section: Introductionmentioning

confidence: 99%

Exchange biasing in MBE grown Fe3O4/CoO bilayers: The antiferromagnetic layer thickness dependence

Zaag

Ball

Feiner

et al. 1996

Journal of Applied Physics

137

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Exchange bias, training effect, hysteretic behavior of angular dependence, and rotational hysteresis loss in NiFe/FeMn bilayer: Effect of antiferromagnet layer thickness J. Appl. Phys. 105, 053913 (2009); 10.1063/1.3087450Thickness and angular dependencies of exchange bias in ferromagnetic/antiferromagnetic bilayers Exchange biasing has been studied for a series of ͓100͔ and ͓111͔ oriented, epitaxial Fe 3 O 4 /CoO bilayers grown by oxidic MBE. The low-temperature exchange biasing versus CoO layer thickness is compared to theoretical models for exchange biasing. We argue that the Malozemoff random field model does not apply to this system. The exchange biasing calculated according to the Meiklejohn-Bean model, assuming nearest-neighbor exchange coupling across a flat and magnetically uncompensated interface, differs for ͓100͔ oriented bilayers by a factor of Ӎ8 from the experimental value.

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“…Noise property of thin film media continues to be an active area of [16,17,18]. Several approaches can effectively reduce the transition noise in Co-alloy recording media.…”

Section: Transition Noise and Suchmentioning

confidence: 99%

High Density Magnetic Recording for Rigid Disk Systems

Yogi¹

1991

J. Magn. Soc. Jpn.

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A?stract ---The areal density of rigid ~isk drive~ is cUlTently approaching 100 Mb/in2 and is expected to con~I1~ue ~o double. every 2-3 years, reach1l1g 1 Gb/m 2 by the year 2000. We will review the current status o~ ngId dISk record111g and I:e~ent pI:ogress iI~ ex~endiI~g th~ areal density into the gigabit/in2 regime. Emphasis wIll be placed on the transItIOn nOIse of th111 film dIsks 111 the hio-h density environment. We will examine some of the challenges and possible limitations in-attaining high d~nsity operation.

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Magnetic thin films in recording technology

Cited by 56 publications

References 0 publications

Discrimination between coupling and anisotropy fields in exchange-biased bilayers

Discrimination between coupling and anisotropy fields in exchange-biased bilayers

Exchange biasing in MBE grown Fe3O4/CoO bilayers: The antiferromagnetic layer thickness dependence

High Density Magnetic Recording for Rigid Disk Systems

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