Magnetic TFET (MAG-TFET)

Boonlua, Thanet; Poyai, Amporn; Phetchakul, Toempong

doi:10.1109/ieecon53204.2022.9741704

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2023

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“…The operation uses a tunneling mechanism that is controlled by the gate voltage. This structure is also used to detect vertical magnetic fields, known as MAG-TFET (Magnet TFET) [11]. In this paper, a comparison of magnetic sensing based on carrier diffraction mechanisms between TFET and FinFET structures via MAG-TFET and MAG-FinFET devices is presented in this paper by using drift with different current generation between tunneling and channel induction.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Carrier Deflection between MAG-TFET and MAG-FinFET

Boonlua

Poyai

Phetchakul

2023

MSF

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This paper is a comparison of the carrier deflection mechanism of a new magnetic sensor structure between the tunneling Field Effect Transistor (TFET) structure and the FinFET structures so-called MAG-TFET and MAG-FinFET.The device relies on carrier deflection from magnetically induced forces. The MAG-TFET current is caused by electron tunneling and drifting through the bulk under gate while the MAG-FinFET current is caused by the drift channel carrier from the inversion layer induced by gate voltages and there is also a bulk current beneath the substrate. The carrier deflection of the device is due to the current in the induced channel and current in the bulk. From the results, carrier deflection in the induced channel is better than in the bulk. The device sensitivity depends on the proportion of these two currents.

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Section: Introductionmentioning

confidence: 99%