Magnetic susceptibility and heat capacity of V2O3 and V1.973Me0.020O3 (Me = Fe, Cr, and Al)

Lyakh, O. V.; Surikov, Vad. I.; Prokudina, N. A.

doi:10.1007/s11182-012-9783-8

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2022

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“…8(a). The calculated entropy change across the magnetic and structural transition is S ∼ 3.65 J mol -1 K -1 , which is less than undoped V 2 O 3 ( S ∼ 10.8 J mol -1 K -1 ) [44,45].…”

Section: (A)-6(d)mentioning

confidence: 99%

Effects of Ga doping on the phase transitions of V2O3

et al. 2022

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“…8(a). The calculated entropy change across the magnetic and structural transition is S ∼ 3.65 J mol -1 K -1 , which is less than undoped V 2 O 3 ( S ∼ 10.8 J mol -1 K -1 ) [44,45].…”

Section: (A)-6(d)mentioning

confidence: 99%

Effects of Ga doping on the phase transitions of V2O3

et al. 2022

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Imaging of Electrothermal Filament Formation in a Mott Insulator

et al. 2021

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The high-power consumption caused by Joule heating is one reason for the emergence of the research area of neuromorphic computing. However, Joule heating is not only detrimental. In a specific class of devices considered for emulating firing of neurons, the formation of an electro-thermal filament sustained by locally confined Joule heating accompanies resistive switching. Here, the resistive switching in a V2O3-thin-film device is visualized via high-resolution wide-field microscopy. Although the formation and destruction of electro-thermal filaments dominate the resistive switching, the strain-induced coupling of the structural and electronic degrees of freedom leads to various unexpected effects like oblique filaments, filament splitting, memory effect, and a hysteretic current-voltage relation with saw-tooth like jumps at high currents. Main Text:The strongly correlated electron system (SCES) V2O3 is a prototypical Mott-Hubbard insulator [1]. At room temperature, stoichiometric V2O3 is a paramagnetic metal with corundum structure, which undergoes a metal-to-insulator-transition (MIT) in cooling below about 150 K. The insulating phase is antiferromagnetic with monoclinic structure.Upon heating the insulating phase undergoes an insulator-to-metal-transition (IMT) [2][3][4]. In recent years, there has been a growing interest in the resistive switching of SCES-devices [5].

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Magnetic susceptibility and heat capacity of V2O3 and V1.973Me0.020O3 (Me = Fe, Cr, and Al)

Cited by 2 publications

References 3 publications

Effects of Ga doping on the phase transitions of V2O3

Effects of Ga doping on the phase transitions of V2O3

Imaging of Electrothermal Filament Formation in a Mott Insulator

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