Magnetic study of epitaxial Fe∕InGaAs∕InP(100) deposited by ion-beam sputtering

Abstract

Fe layers, 3, 6, 10, and 25 nm thick, were epitaxially deposited by ion-beam sputtering on InGaAs∕InP(100) wafers. For the 3-nm-thick layer, the sample shows a strong in-plane uniaxial magnetic anisotropy along the [110] direction between 5 and 300 K. The 6-nm film exhibits competition between the uniaxial magnetic anisotropy and the magnetic anisotropy of the bulk bcc Fe. The fourfold magnetic anisotropy of the bulk Fe dominates for the 10-nm Fe film. A decrease of the magnetization is observed for the thinner sample as compared to the bulk. This decrease is discussed in terms of Fe thickness, interface effect, diffusion effect, and possible phases at the interface with the semiconductor.

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

“…One major driving factor behind this is the fact that MBE growth is both expensive and time-consuming; consequently making this technique unattractive for industrial application. Ion-beam sputter deposition has been used for epitaxial growth of Fe on GaAs(001), by Damm et al 82 , and on InGaAs(001) by Richomme et al 47 , and in both cases the structural quality of the films, in addition to the magnetic anisotropies, are found to be comparable to those obtained in the respective MBE-grown systems.…”

Comparison between the in-plane anisotropies and magnetostriction constants of thin epitaxial Fe films grown on GaAs and Ga0.8In0.2As substrates, with Cr overlayers

“…The differences in the magnitudes for the uniaxial constants between the Cr/ Fe/ Ga 0.8 In 0.2 As films and the Cr/ Fe/ GaAs films will be due to the size of the distortions to the bcc cell depending on the other atoms in the substrate, i.e., Ga and In and the surface reconstruction. As uniaxial anisotropy has also been observed in Fe/ InAs films, 5 Fe/ Ga 0.5 In 0.5 As films, 7 and Fe/ AlAs films, 20 this backs up the idea that it is the Fe-As bonds rather than the Ga or In, which causes the uniaxial anisotropy.…”

“…The study of Fe films on semiconductor substrates is of interest for spintronic devices. 1,2 Previous research has investigated Fe films on GaAs, 3,4 on InAs 5,6 and on Ga 0.5 In 0.5 As 7 substrates. For all these Fe films an in-plane uniaxial anisotropy was present when the Fe thickness was less than 25 nm, as well as the magnetocrystalline cubic anisotropy characteristic of the bulk.…”

In-plane anisotropy and magnetostriction constants of Fe/Ga0.8In0.2As films with Cr overlayers

“…If the uniaxial anisotropy observed in Fe/GaAs films [29,30], Fe/Ga 0.5 In 0.5 As films [19] and Fe/InAs films [12] was due to the different lattice mismatch, it would be expected that the Fe films grown on the lattice-matched Ga 0.8 In 0.2 As substrates would have no uniaxial anisotropy.…”

“…Thus the direction of the uniaxial easy axis in Fe/InAs(001) films is perpendicular to the uniaxial easy axis direction in Fe/GaAs(001) films. Recently Fe films on Ga 0.5 In 0.5 As substrate have been studied [19]. For these Fe films it was determined that a uniaxial anisotropy was present with the easy axis along the [110] direction, i.e.…”