Magnetic structure of 3d-element doped Mn4N films confirmed by X-ray magnetic circular dichroism – Conditions for magnetic compensation

Komori, Taro; Horiuchi, Takumi; Mitarai, Haruka; Yasuda, Tomohiro; Amemiya, Kenta; Suemasu, Takashi

doi:10.1016/j.jmmm.2022.170050

Cited by 6 publications

(2 citation statements)

References 62 publications

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“…There are two sites on which Mn can be replaced by doping, 1a or 3c. Co tends to replace Mn at the 3c site and Fe, Cr and In have little preference [11,12]. Zhang et al showed that Ga occupies 1a corner positions in the bulk material [6].…”

Section: Magnetic and Magneto-transport Propertiesmentioning

confidence: 99%

“…In the pure form there is no sign of compensation in either bulk or thin films [5,7], but compensation can be realised by atomic substitution for Mn, Mn 4−x Z x N, not only by nonmagnetic atoms [8] but also by Z = Co and Ni [4,9,10]. No compensation is found for Z = Cr and Fe because these dopant atoms occupy both corner and face-centered sites with no particular preference [11]. In the case of In substitution, a ferrimagnetic-ferromagnetic phase transition was reported between x = 0.15 and x = 0.27 based on AHE measurements and first principles calculations [12].…”

Section: Introductionmentioning

confidence: 99%

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Magnetic compensation in sputtered ferrimagnetic Mn 4 − x
Prendeville,
Jiménez-Cavero,
Naden
et al. 2024
J. Phys. D: Appl. Phys.
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Fully compensated ferrimagnets are attracting increasing attention for spintronics. Here we report a series of Mn4−xGaxN ferrimagnetic thin films grown on (100)-oriented MgO by magnetron sputtering. A small tetragonal distortion with c/a = 0.99 leads to perpendicular magnetic anisotropy with a [001] easy axis. The magnetisation decreases with increasing Ga content up to x = 0.18, where the magnetic moment is close to zero at room temperature. It increases with further increase of x, indicating the magnetic compensation composition has been crossed and the dominant sublattice has switched from Mn on the corner sites, where it is progressively replaced by nonmagnetic Ga, to noncollinear Mn on the face-centered sites. Compensation found at 235K in a remanent scan of the x = 0.18 film is confirmed by measurements of the anomalous Hall effect and interpolation of the inverse coercivity. This work establishes the conditions for thin film growth of Mn4−xGaxN that could be used for room-temperature ferrimagnetic spintronics. The behaviour of thin films is compared with that of bulk material.

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Section: Magnetic and Magneto-transport Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Magnetic compensation in sputtered ferrimagnetic Mn 4 − x
Prendeville,
Jiménez-Cavero,
Naden
et al. 2024
J. Phys. D: Appl. Phys.
0
0
0
0
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Room‐Temperature Solid‐State Nitrogen‐Based Magneto‐Ionics in Co_xMn_1−xN Films

López‐Pintó,

Jensen,

Chen

et al. 2024

Adv Funct Materials

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The increasing energy demand in information technologies requires novel low‐power procedures to store and process data. Magnetic materials, central to these technologies, are usually controlled through magnetic fields or spin‐polarized currents that are prone to the Joule heating effect. Magneto‐ionics is a unique energy‐efficient strategy to control magnetism that can induce large non‐volatile modulation of magnetization, coercivity and other properties through voltage‐driven ionic motion. Recent studies have shown promising magneto‐ionic effects using nitrogen ions. However, either liquid electrolytes or prior annealing procedures are necessary to induce the desired N‐ion motion. In this work, magneto‐ionic effects are voltage‐triggered at room temperature in solid state systems of CoxMn1‐xN films, without the need of thermal annealing. Upon gating, a rearrangement of nitrogen ions in the layers is observed, leading to changes in the co‐existing ferromagnetic and antiferromagnetic phases, which result in substantial increase of magnetization at room temperature and modulation of the exchange bias effect at low temperatures. A detailed correlation between the structural and magnetic evolution of the system upon voltage actuation is provided. The obtained results offer promising new avenues for the utilization of nitride compounds in energy‐efficient spintronic and other memory devices.

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Growth of ultrathin Mn4N epitaxial films on SrTiO3(001) and their thickness-dependent magnetic structures

Yasuda,

Amemiya,

Suemasu

2023

Applied Physics Letters

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Mn4N thin films meet the requirements for efficient current-driven magnetic domain wall motion, such as perpendicular magnetic anisotropy and small magnetization. To demonstrate efficient field-free spin–orbit torque (SOT)-driven domain wall motion, the thickness of the Mn4N layer must be reduced. In this study, we focus on the fabrication of Mn4N ultrathin films on SrTiO3(001) substrates and demonstrate the epitaxial growth of Mn4N films as thin as around 4 nm. Surprisingly, the sign of the anomalous Hall resistivity of Mn4N reverses when the thickness of Mn4N decreases from approximately 8 to 4 nm. X-ray magnetic circular dichroism measurements suggest that the magnetic structure of Mn4N with a thickness of around 4 nm is different from that of conventional ferrimagnetic Mn4N films. The results obtained in this study are of great importance when considering the use of SOT and the interfacial Dzyaloshinskii–Moriya interaction in Mn4N ultrathin films.

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Magnetic structure of 3d-element doped Mn4N films confirmed by X-ray magnetic circular dichroism – Conditions for magnetic compensation

Cited by 6 publications

References 62 publications

Magnetic compensation in sputtered ferrimagnetic Mn 4 − x
Prendeville,
Jiménez-Cavero,
Naden
et al. 2024
J. Phys. D: Appl. Phys.
0
0
0
0
View full text Add to dashboard Cite

Magnetic compensation in sputtered ferrimagnetic Mn 4 − x
Prendeville,
Jiménez-Cavero,
Naden
et al. 2024
J. Phys. D: Appl. Phys.
0
0
0
0
View full text Add to dashboard Cite

Room‐Temperature Solid‐State Nitrogen‐Based Magneto‐Ionics in Co_xMn_1−xN Films

Growth of ultrathin Mn4N epitaxial films on SrTiO3(001) and their thickness-dependent magnetic structures

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Magnetic structure of 3d-element doped Mn4N films confirmed by X-ray magnetic circular dichroism – Conditions for magnetic compensation

Cited by 6 publications

References 62 publications

Magnetic compensation in sputtered ferrimagnetic Mn 4 − x Prendeville, Jiménez-Cavero, Naden et al. 2024J. Phys. D: Appl. Phys.0000View full textAdd to dashboardCite

Magnetic compensation in sputtered ferrimagnetic Mn 4 − x Prendeville, Jiménez-Cavero, Naden et al. 2024J. Phys. D: Appl. Phys.0000View full textAdd to dashboardCite

Room‐Temperature Solid‐State Nitrogen‐Based Magneto‐Ionics in CoxMn1−xN Films

Growth of ultrathin Mn4N epitaxial films on SrTiO3(001) and their thickness-dependent magnetic structures

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Resources

About

Magnetic compensation in sputtered ferrimagnetic Mn 4 − x
Prendeville,
Jiménez-Cavero,
Naden
et al. 2024
J. Phys. D: Appl. Phys.
0
0
0
0
View full text Add to dashboard Cite

Magnetic compensation in sputtered ferrimagnetic Mn 4 − x
Prendeville,
Jiménez-Cavero,
Naden
et al. 2024
J. Phys. D: Appl. Phys.
0
0
0
0
View full text Add to dashboard Cite

Room‐Temperature Solid‐State Nitrogen‐Based Magneto‐Ionics in Co_xMn_1−xN Films