2006
DOI: 10.1016/j.jmmm.2006.01.224
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Magnetic, structural and electrical properties of ordered and disordered Co50Fe50 films

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Cited by 10 publications
(4 citation statements)
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“…The change in the coercivity with T m of the free layer in spin valve is nonmonotonic, and the maximum value appears at T m = 225 • C. This phenomenon has also been observed in exchange-coupled NiFe [27] and CoFe films. [28,29] T m (C) When the temperature is lower than 225 • C, both T m and H cf increase, mainly because of the phase transition of the CoFe free layer. In general, when CoFe is deposited on the Cu layer, an fcc structure forms easily.…”
Section: Resultsmentioning
confidence: 99%
“…The change in the coercivity with T m of the free layer in spin valve is nonmonotonic, and the maximum value appears at T m = 225 • C. This phenomenon has also been observed in exchange-coupled NiFe [27] and CoFe films. [28,29] T m (C) When the temperature is lower than 225 • C, both T m and H cf increase, mainly because of the phase transition of the CoFe free layer. In general, when CoFe is deposited on the Cu layer, an fcc structure forms easily.…”
Section: Resultsmentioning
confidence: 99%
“…4. The temperature coefficient of resistance (TCR) value is defined as TCR =(1/R)/(∆R/∆T), where R is the electrical resistance at temperature T, and ∆R is the resistance difference due to the temperature change ∆T [8]. According to the change of TCR on the reduced electrical resistivity temperature curve, the two values dependent on glass transition range are found [9].…”
Section: Resultsmentioning
confidence: 99%
“…This explains the observed improvement of the magnetic properties when thin films and devices based on CoFe are post-annealed at this temperature. 14 …”
Section: -2mentioning
confidence: 99%