2018
DOI: 10.1038/s41598-018-25464-y
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Magnetic resonance probing of ground state in the mixed valence correlated topological insulator SmB6

Abstract: Introducing of topological insulator concept for fluctuating valence compound – samarium hexaboride – has recently initiated a new round of studies aimed to clarify the nature of the ground state in this extraordinary system with strong electron correlations. Here we discuss the data of magnetic resonance in the pristine single crystals of SmB6 measured in 60 GHz cavity experiments at temperatures 1.8–300 K. The microwave study as well as the DC resistivity and Hall effect measurements performed for the differ… Show more

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Cited by 19 publications
(7 citation statements)
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“…The key assumptions of this scenario, namely (i) presence of valence fluctuations (VFs), (ii) existence of an impurity band (IB), and (iii) the Fermi level lying in the IB, are in agreement with theoretical studies of impurity states in mixed-valent materials [23,25,26], studies of electrodynamic properties of SmB 6 in the low-frequency regime [6], optical conductivity studies of SmB 6 [27,28], observation of presence of variable-range hopping transport in SmB 6 at lowest temperatures [7], and many other experimental observations reported for SmB 6 (see e.g. [6,[27][28][29] and references therein). As explained in [18], the energy of an impurity in the semiconductor with an IB that contains metallic ions in two different valency states (e.g.…”
supporting
confidence: 87%
See 1 more Smart Citation
“…The key assumptions of this scenario, namely (i) presence of valence fluctuations (VFs), (ii) existence of an impurity band (IB), and (iii) the Fermi level lying in the IB, are in agreement with theoretical studies of impurity states in mixed-valent materials [23,25,26], studies of electrodynamic properties of SmB 6 in the low-frequency regime [6], optical conductivity studies of SmB 6 [27,28], observation of presence of variable-range hopping transport in SmB 6 at lowest temperatures [7], and many other experimental observations reported for SmB 6 (see e.g. [6,[27][28][29] and references therein). As explained in [18], the energy of an impurity in the semiconductor with an IB that contains metallic ions in two different valency states (e.g.…”
supporting
confidence: 87%
“…Nevertheless in can be still expected that such change of E 0 will be associated with change of physical properties of the system in a certain temperature region. As possible (or perhaps accidental) analogy with the above provided picture we would like to mention very recent ESR studies of SmB 6 [29]. The ESR signal observed at T = 5 K was not more observed at T = 6 K [29]; moreover, the critical behavior of the integrated ESR intensity, I(T ) ∼ (T * − T ) ν , with characteristic temperature T * = 5.34 ± 0.05 K and exponent ν = 0.38 ± 0.03 was observed, and the authors [29] mentioned a possibility of "some abrupt structural/magnetic transition" to explain experimental results and emphasized the importance of re-considering "5 K anomaly" in context of modern topological physics of SmB 6 .…”
mentioning
confidence: 64%
“…In consequence, several studies have been conducted to compare the impact of non-magnetic and magnetic impurities on the surface states [102,149,150,207,208] for insight into the surface states. It should also be noted that SmB 6 doped with Gd or Eu was also used for electron spin resonance (ESR) investigations [209,210]. Moreover, Gd-and Fe-substituted samples were investigated in Ref.…”
Section: Substituted Smb6mentioning
confidence: 99%
“…It should also be noted that SmB 6 doped with Gd or Eu was also used for electron spin resonance (ESR) investigations. [209,210] Moreover, Gd-and Fe-substituted samples were investigated in ref. [128] to identify the 2 × 1 reconstructed surface.…”
Section: Substituted Smbmentioning
confidence: 99%