Magnetic proximity effect and spin-orbital texture at the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mi mathvariant="normal">EuS</mml:mi></mml:math>interface

Lee, Alex Taekyung; Han, Myung Joon; Park, Kyungwha

doi:10.1103/physrevb.90.155103

Cited by 45 publications

(52 citation statements)

References 38 publications

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“…We adopted the generalized gradient approximation (GGA) for the description of exchangecorrelation interaction among electrons [35], along with the van der Waals correction for a better description of the long-range dispersion force [36]. Eu f-orbitals were considered as valence electrons and their U and J values were set at 8 eV and 1 eV, respectively [29]. The trend of unusual magnetic behavior is qualitatively the same as that without employing the GGA+U scheme.…”

mentioning

confidence: 85%

“…Due to the potential difference between EuS and Bi 2 Se 3 and hence the charge redistribution at the interface (see Fig. S5 in SM), the band bending occurs and two linear Dirac cones (red dotted boxes) with the same spin helicity can be seen [29,30]. The X-shape band around -0.3 eV in the vicinity of the Γ point (high-energy TSS) results from the rehybridization between TSS and quantumwell states of Bi 2 Se 3 ( Fig.…”

Section: Figure 3 (Color Online) (A) Calculated Magnon Dispersion Relmentioning

confidence: 99%

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Understanding the Giant Enhancement of Exchange Interaction in Bi2Se3−EuS Heterostructures

et al. 2017

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mentioning

confidence: 85%

Section: Figure 3 (Color Online) (A) Calculated Magnon Dispersion Relmentioning

confidence: 99%

Understanding the Giant Enhancement of Exchange Interaction in Bi2Se3−EuS Heterostructures

et al. 2017

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“…Common materials to be used for this purpose include EuO, EuS, and MnSe. While calculated values for the exchange fields range from 8.5 to 54 meV [40][41][42], some evidence of induced gaps as large as 90 meV has been reported for MnSe films expitaxially grown on Bi2Se3 [43]. In our calculations we fix the magnitude of the exchange field to this 90 meV value.…”

Section: A Uniform Magnetizationmentioning

confidence: 99%

Transport in selectively magnetically doped topological insulator wires

2015

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We study the electronic and transport properties of a topological insulator nanowire including selective magnetic doping of its surfaces. We use a model which is appropriate to describe materials like Bi 2 Se 3 within a k · p approximation and consider nanowires with a rectangular geometry. Within this model the magnetic doping at the (111) surfaces induces a Zeeman field which opens a gap at the Dirac cones corresponding to the surface states. For obtaining the transport properties in a two terminal configuration we use a recursive Green's function method based on a tight-binding model which is obtained by discretizing the original continuous model. For the case of uniform magnetization of two opposite nanowire (111) surfaces we show that the conductance can switch from a quantized value of e 2 /h (when the magnetizations are equal) to a very small value (when they are opposite). We also analyze the case of nonuniform magnetizations in which the Zeeman field on the two opposite surfaces change sign at the middle of the wire. For this case we find that conduction by resonant tunneling through a chiral state bound at the middle of the wire is possible. The resonant level position can be tuned by imposing an Aharonov-Bohm flux through the nanowire cross section.

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“…1a. This structure is an important prototype which has been extensively studied 20,39,42,46 , while our model is actually generic and not only restricted to this EuS magnet. For a given localized magnetic ion (Eu ion in green circle) of FMI close to the interface, the interlayer magnetic coupling constant I 12 is an overall effect of the indirect exchange coupling of all the Eu ions (blue ellipse) on the other side of TI/FMI interface, through the coupling of electronic states in TI (orange dashed lines).…”

Section: Theory a Interlayer Exchange Coupling Constantmentioning

confidence: 99%

“…(6), eigenvalues from a model Hamiltonian are needed. Due to the hybridization effect between upper the lower surfaces, the Hamiltonian is a function of the layer thickness with different hybridization gaps 46 . However, for qualitative demonstration purpose, we take a layer-independent Hamiltonian for simplicity.…”

Section: -Band Model Hamiltonian Of Ti Bi2se3mentioning

confidence: 99%

Magnetic proximity effect and interlayer exchange coupling of ferromagnetic/topological insulator/ferromagnetic trilayer

Cui

et al. 2015

Phys. Rev. B

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Magnetic proximity effect between topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly challenging. We theoretically investigate the interlayer exchange coupling of two FMIs separated by a TI thin film, and show that the particular electronic states of the TI contributing to the proximity effect can be directly identified through the coupling behavior between two FMIs, together with a tunability of coupling constant. Such FMI/TI/FMI structure not only serves as a platform to clarify the magnetic structure of FMI/TI interface, but also provides insights in designing the magnetic storage devices with ultrafast response.

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Magnetic proximity effect and spin-orbital texture at theBi2Se3/EuSinterface

Cited by 45 publications

References 38 publications

Understanding the Giant Enhancement of Exchange Interaction in Bi2Se3−EuS Heterostructures

Understanding the Giant Enhancement of Exchange Interaction in Bi2Se3−EuS Heterostructures

Transport in selectively magnetically doped topological insulator wires

Magnetic proximity effect and interlayer exchange coupling of ferromagnetic/topological insulator/ferromagnetic trilayer

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