Magnetic properties, spin waves and interaction between spin excitations and 2D electrons in interface layer in Y₃Fe₅O₁₂/AlO _x /GaAs-heterostructures

Abstract

We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAsheterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of the linewidth ∆H. At the same time, for all samples FMR linewidths are high. Sputtered YIG films have magnetic inhomogeneity, which gives the main contribution to the FMR linewidth. Transistor structures with two-dimensional electron gas (2DEG) channels in AlOx / GaAs interface governed by YIG-film spin excitations are designed. An effective influence of spin excitations on the current flowing through the GaAs 2DEG channel is observed. Light illumination results in essential changes in the FMR spectrum. It is found that an increase of the 2DEG current leads to an inverse effect, which represents essential changes in the FMR spectrum.

Spin excitations in laser-molecular-beam epitaxy-grown nanosized YIG films: towards low relaxation and desirable magnetization profile

“…This is important for microwave applications. Synthesis of nanometer YIG films of high quality on semiconductor substrates (Si, GaN and GaAs) produced by the two-stage ion-beam sputtering [26][27][28] gives us the possibility to grow high-quality YIG films on semiconductor substrates by the LMBE technique. How do we reduce the relaxation in spin-wave devices produced on nanosized YIG film / semiconductor structures and grow YIG films with desirable effective magnetization profile?…”

“…(3) In accordance with [26][27][28], the third layer is a buffer YIG layer with a thickness of 2-3 In order to smooth surface of this layer, it is desirable to grow it at a high growth temperature. The purpose of this buffer YIG layer is to prevent diffusion of fast-relaxing ions Gd 3 + and Nd 3 + in the main YIG layer from GGG and NdGG layers, respectively.…”

“…It should be noted that the spin Seebeck effect is of crucial importance in spintronics, since it enables the simple and versatile generation of a spin current from heat [22][23][24][25]. It was found that Au in Au/YIG bilayers are a good spin current detector, far better than the Pt ones in Pt/YIG [23] Recent progress in the synthesis of nanometer YIG films of high quality on semiconductor substrates (Si, GaN and GaAs) provides the possibility to construct spin-wave devices on semiconductor chips operating at microwave frequencies [26][27][28]. In addition, nanometer magnetic films have a region of low relaxation of long-wavelength spin waves [29].…”

Lateral semiconductor magnonics: an array of GaAs stripes atop the YIG layer

“…(GGG). However, these substrates have recently become semiconductor materials: Si, GaAs, GaN, etc [12,13]. The main idea of this is to combine magnonics with conventional CMOS technologies.…”

Магнитоупругие свойства пленок железо-иттриевого граната, полученных ионно-лучевым распылением на подложках Si и GaAs

“…В то же время используемая технология жидкофазной эпитаксии (ЖФЭ) [4] получения пленок ЖИГ существенно ограничивает перспективы их интеграции с полупроводниковыми технологиями, результатом которой может быть создание монолитных гибридных устройств. В этой связи в последнее время существенно возрос интерес к альтернативным технологиям получения пленок ЖИГ и, в частности, к методу ионно-лучевого распыления [5] не только на подложки ГГГ (гадолинийгаллиевый гранат) [6], но и на полупроводниковые подложки [7][8][9]. В настоящей работе сообщается о результатах исследования магнитоупругих свойств пленок ЖИГ, полученных методом ионно-лучевого испарения на подложки Si и GaAs.…”