Magnetic Properties of SrRuO3 and CaRuO3

Longo, J.M.; Raccah, P. M.; Goodenough, John B

doi:10.1063/1.1656282

Cited by 424 publications

(240 citation statements)

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“…All of the cubic-type ARuO 3 perovskites (A = Ca, Sr, Ba) are metallic to lowest measured temperatures. SrRuO 3 and BaRuO 3 are Stoner ferromagnets with Curie temperatures of T C = 160 and 60 K respectively [4,5,6,7], but CaRuO 3 shows non-Fermi liquid behaviour without a magnetic transition [8]. Another ruthenate perovskite, PbRuO 3 , was synthesised at high pressures in 1970 [9], but the electronic properties of this material have not been reported.…”

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Metal-Insulator Transition and Orbital Order inPbRuO3

Kimber

Rodgers

et al. 2009

Phys. Rev. Lett.

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Anomalous low temperature electronic and structural behaviour has been discovered in and metallic conductivity at 290 K are similar to those of SrRuO 3 and other ruthenate perovskites, but a sharp metal-insulator transition at which the resistivity increases by four orders of magnitude is discovered at 90 K. This is accompanied by a first order structural transition to an Imma phase (a = 5.56962(1), b = 7.74550(1), c = 5.66208(1) Å at 25 K) that shows a coupling of Ru 4+ 4d orbital order to distortions from Pb 2+ 6s6p orbital hybridization.The Pnma to Imma transition is an unconventional reversal of the group-subgroup symmetry relationship. No long range magnetic order is evident down to 1.5 K. Electronic structure calculations show that hybridization of Pb 6s6p and Ru 4d orbitals and strong spin-orbit coupling stabilise this previously hidden ground state for ruthenate perovskites.

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confidence: 99%

Metal-Insulator Transition and Orbital Order inPbRuO3

Kimber

Rodgers

et al. 2009

Phys. Rev. Lett.

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“…3,4 The actual nature of magnetism in this material, usually considered as an example of pure itinerant magnetism, 5 is not fully understood yet. This system can be included in the group of the so-called ''bad metals,'' 5,6 strongly correlated electron systems showing remarkable electrical and magnetic properties.…”

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“…1,2 This compound has a 4d 4 low spin configuration (Sϭ1) and is believed to have a narrow * band resulting from Ru t 2g and O 2 p orbitals, which governs magnetic ordering. 3,4 The actual nature of magnetism in this material, usually considered as an example of pure itinerant magnetism, 5 is not fully understood yet. This system can be included in the group of the so-called ''bad metals,'' 5,6 strongly correlated electron systems showing remarkable electrical and magnetic properties.…”

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Metal–insulator transition in SrRuO3 induced by ion irradiation

Sefrioui

Arias

Navacerrada

et al. 1998

Applied Physics Letters

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We have studied the effect of He ϩ irradiation on the electrical resistivity and Curie temperature of ferromagnetic SrRuO 3 thin films. An evolution from metallic to insulating behavior is observed when He ϩ ion fluence is increased, suggesting a metal-insulator transition. Damage by ion irradiation produces a strong decrease of the Curie temperature. On the other hand, no significant change in T c ͑ϳ160 K͒ takes place in fresh samples grown at different substrate temperatures. We discuss the possible correlation between structural changes induced by irradiation, which reflect in an increase of the pseudocubic lattice parameter, and the observed depression of T c . © 1998 American Institute of Physics. ͓S0003-6951͑98͒03349-X͔ SrRuO 3 is an orthorhombically distorted perovskite ͑space group Pbnm͒, and the only example of ferromagnetic ordering ͑with a Curie temperature T c , of 165 K͒ in conducting 4d transition-metal oxides. 1,2 This compound has a 4d 4 low spin configuration (Sϭ1) and is believed to have a narrow * band resulting from Ru t 2g and O 2 p orbitals, which governs magnetic ordering. 3,4 The actual nature of magnetism in this material, usually considered as an example of pure itinerant magnetism, 5 is not fully understood yet. This system can be included in the group of the so-called ''bad metals,'' 5,6 strongly correlated electron systems showing remarkable electrical and magnetic properties. A common feature of these materials is the high value of their roomtemperature electrical resistivities, close to the theoretical limit for the metallic state ͑Ioffe-Regel limit͒. From the point of view of possible technological applications, both the crystallographic structure ͑pseudocubic perovskite͒ and lattice parameters of this material, close to those of ͑YBCO͒, make it a promising candidate for the fabrication of ͑SNS͒ Josephson junctions of high-T c superconducting oxides. 7 In addition, its conducting character makes it a suitable material for electrodes in other types of devices based on perovskite oxides, as epitaxial conducting oxide-ferroelectric or superconduction-ferroelectric heterostructures. 8 Structural distortions are known to play a central role in the magnetic properties of SrRuO 3 . The absence of ferromagnetic ordering in the isostructural CaRuO 3 has been explained in terms of a stronger orthorhombical distortion in this compound which changes the sign of the magnetic interaction. 9 Both hydrostatic and chemical pressure resulting from the partial substitution of Sr 2ϩ ͑0.62 A͒ by the bigger Ca 2ϩ ͑1.06 A͒ give rise to a decrease of the Curie temperature, but the system remains metallic. This has been explained in terms of the magnetism of this compound being very sensitive to the Ru-Ru distance. 10 On the other hand, substitution of Ru by Ti up to 20% rapidly reduces the critical temperature and causes an increase of the resistivity which undergoes a crossover from metallic to semiconducting behavior at low temperatures. Once again, this has been proposed to occur as a result of local ...

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“…[1][2][3][4] Moreover, the possibility to control and manipulate carrier spin polarization at heterointerfaces between transition metal oxides [5][6] and the demonstration of novel functionalities at the domain walls in multiferroic materials [7][8] have opened new frontiers in oxide spintronics. A promising material among the complex oxides is SrRuO 3, which apart from being metallic is also ferromagnetic (below 160 K) [9] and thus can find use both in oxide electronics and spintronics. In spite of this, not much is known about electron transport across a functional interface of SRO particularly with an oxide semiconductor as Nb doped SrTiO 3 , although the physical properties of SRO films have been extensively studied.…”

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“…A promising material among the complex oxides is SrRuO 3, which apart from being metallic is also ferromagnetic (below 160 K) [9] and thus can find use both in oxide electronics and spintronics. In spite of this, not much is known about electron transport across a functional interface of SRO particularly with an oxide semiconductor as Nb doped SrTiO 3 , although the physical properties of SRO films have been extensively studied.…”

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confidence: 99%

Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

Roy

Kamerbeek

Rana

et al. 2013

Applied Physics Letters

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SrRuO 3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO 3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO 3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport, that originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.Complex oxide heterointerfaces are of immense interest in oxide electronics and has led to the emergence of new physical phenomena that arises due to competing energy scales involved in the interplay between the structural, charge, spin and orbital degrees of freedom. [1][2][3][4] Moreover, the possibility to control and manipulate carrier spin polarization at heterointerfaces between transition metal oxides [5][6] and the demonstration of novel functionalities at the domain walls in multiferroic materials [7][8] have opened new frontiers in oxide spintronics. A promising material among the complex oxides is SrRuO 3, which apart from being metallic is also ferromagnetic (below 160 K) [9] and thus can find use both in oxide electronics and spintronics. In spite of this, not much is known about electron transport across a functional interface of SRO particularly with an oxide semiconductor as Nb doped SrTiO 3 , although the physical properties of SRO films have been extensively studied. It has been reported that the surface terminating plane of the underlying substrate can influence the initial growth of the deposited SRO films and has been proposed to be an interesting approach to fabricate ordered oxide nanostructures [10][11] . Trenches that are created in thin films of SRO are associated with a local surface termination of SrO at the STO substrate, where the initial growth of SRO is unfavorable. Regions in between the trenches are areas of

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Magnetic Properties of SrRuO3 and CaRuO3

Cited by 424 publications

References 4 publications

Metal-Insulator Transition and Orbital Order inPbRuO3

Metal-Insulator Transition and Orbital Order inPbRuO3

Metal–insulator transition in SrRuO3 induced by ion irradiation

Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

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