Magnetic properties of Mn-doped ZnO

Fukumura, Tomoteru; Jin, Zhengwu; Kawasaki, Masashi; Shono, Tomohiro; Hasegawa, Tetsuya; Koshihara, Shin‐ya; Koinuma, Hideomi

doi:10.1063/1.1348323

Cited by 601 publications

(341 citation statements)

References 10 publications

Supporting

Mentioning

310

Contrasting

Unclassified

Order By: Relevance

“…Both the existence and absence of FM have been reported in Mn-doped ZnO thin fi lms. Spin-glass behavior [4], paramagnetism [5], FM with a T C of 45 K [6], and room-temperature FM [7] have been observed. This suggests a strong dependence of magnetic properties on the sample-preparation conditions [8].…”

mentioning

confidence: 92%

Structure and magnetic properties of Mn-doped ZnO thin films

Zhang¹,

Li²,

Shi³

et al. 2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We report the structure and magnetic properties of Zn1−xMnxO thin films grown on Si(001) substrates by pulsed laser deposition. Structure and phase evolution with Mn doping has been studied using x-ray diffraction, electron diffraction, and high-resolution electron microscopy. The undoped and 1% Mn-doped ZnO films are completely (001) oriented, and further Mn doping deteriorates the (001) orientation. For Mn concentrations below 3%, only the hexagonal ZnO phase exists in the films without secondary phases. As the Mn concentration reaches 5%, secondary phase Mn2O3 was found aggregating at grain boundaries. All the Mn-doped films show ferromagnetic properties at room temperature, and the magnetic moment decreases as the Mn concentration increases. Our results suggest that the ferromagnetism observed in Zn1−xMnxO thin films is intrinsic rather than associated with secondary phases.

show abstract

mentioning

confidence: 92%

Structure and magnetic properties of Mn-doped ZnO thin films

Zhang¹,

Li²,

Shi³

et al. 2007

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…For example, studies have been reported on Ti--doped [6], V -doped [7], Cr-doped [8], Mn-doped [9], Fe--doped [10], Co-doped [11], Ni-doped [12], and Cu-doped [13] ZnO.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Mekki

Tabet

2014

Acta Phys. Pol. A

View full text Add to dashboard Cite

Transparent zinc oxide thin lms doped with molybdenum have been prepared using a DC reactive magnetron sputtering on glass substrates from metallic ZnMo target. The three lms, called A, B, and C, had 1.9 at.% Mo, 2.8 at.% Mo and 4.7 at.% Mo, respectively. The composition of the lms was determined by X-ray photoelectron spectroscopy. The analysis of Mo 3d 5/2 core level spectra indicated that Mo exist in the lms in Mo 6+ oxidation state irrespective of the Mo content in the lm. The X-ray di raction spectrum of lm A showed a texture along the 002 orientation, while that of lm B showed two peaks, one at θ ≈ 34.5 • and the other at ≈ 36.5 • corresponding to 002 and 101 orientations, respectively. Film C showed two small peaks corresponding to 100 and 110 orientations. Optical measurements showed that all three lms had a transmittance of about 80%. The energy band gap showed a linear increase as Mo concentration increases from 3.29 eV to 3.38 eV. The atomic force microscopy image of lm A showed a homogeneous morphology of the surface of the lm, while the atomic force microscopy images of lms B and C showed an inhomogeneous one.

show abstract

“…The exact nature of the ferromagnetism also remains unclear [1,8,11,13]; among possible problems are the formation of metallic TM or TM-oxide clusters [9,[12][13][14]17] or magnetism from the substrate on which thin films are deposited [18]. Two recent review papers on the subject concluded that a more precise control of the TM dopant in the oxide and careful structural and microstructural analyses are needed [1,11].Experimentally TM dopants have been introduced both during ZnO powder synthesis [10,14,16] and growth of epitaxial thin films [6][7][8][9]11,15,18]. In addition, ion implantation is also actively being explored for TM doping of ZnO [1,12,13,19].…”

mentioning

confidence: 99%

Lattice location and thermal stability of implanted Fe in ZnO

Rita

Wahl

Correia

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

The emission channeling technique was applied to evaluate the lattice location of implanted 59 Fe in singlecrystalline ZnO. The angular distribution of β − particles emitted by 59 Fe was monitored with a position-sensitive electron detector, following 60-keV low dose (2.0×10 13 cm −2 ) room-temperature implantation of the precursor isotope 59 Numerous technological breakthroughs are envisaged with the use of magnetic semiconductor materials that show a ferromagnetic ordering temperature at or above room temperature, e.g., spin transistors, ultradense nonvolatile memories and optical emitters with polarized output [1]. One class of materials, which are especially promising for applications, are diluted magnetic semiconductors, usually ternary systems of the type III 1-x -TM x -V or II 1-x -TM x -VI, where a 3d transition metal (TM) partly substitutes up to a few per cent of the group III or group II cations. It has been predicted by theory that the III-nitride semiconductors GaN and InN and the II-oxide semiconductor ZnO are suitable hosts to exhibit ferromagnetism close to or above room temperature [2,3]. In the case of ZnO, besides V, Cr, Mn, Co and Ni, Fe should also act as a ferromagnetic dopant [3][4][5]. Several reports on ferromagnetic systems based on ZnO can be found in the literature [1,[6][7][8][9][10][11][12][13][14]. Cases in which no ferromagnetic behavior was observed [7,[15][16][17][18] revealed systematic trends for the various transition metals, doping concentrations, and differences between n-and p-type ZnO, but also conflicting results between different authors. It was thus argued [11,14] that experimental reproducibility needs to be improved. The exact nature of the ferromagnetism also remains unclear [1,8,11,13]; among possible problems are the formation of metallic TM or TM-oxide clusters [9,[12][13][14]17] or magnetism from the substrate on which thin films are deposited [18]. Two recent review papers on the subject concluded that a more precise control of the TM dopant in the oxide and careful structural and microstructural analyses are needed [1,11].Experimentally TM dopants have been introduced both during ZnO powder synthesis [10,14,16] and growth of epitaxial thin films [6][7][8][9]11,15,18]. In addition, ion implantation is also actively being explored for TM doping of ZnO [1,12,13,19]. With respect to implantation, the questions that should be clarified, are: to what extent are TMs incorporated into the proper lattice sites (substituting for Zn atoms), what is the microstructure of substitutional TMs, and what are the optimum annealing conditions.We have partly addressed some of these issues in a previous study on Fe-implanted ZnO [20], which, however, focused on its optical properties. In that case, 56 Fe was implanted at 100 keV up to a fluence of 10 16 cm −2 into ZnO single crystals, followed by Rutherford backscattering spectroscopy (RBS) analysis of the damage and its recovery during thermal annealing. Since Fe in ZnO cannot be detected by RBS, particle-induced X-ray emiss...

show abstract

Magnetic properties of Mn-doped ZnO

Cited by 601 publications

References 10 publications

Structure and magnetic properties of Mn-doped ZnO thin films

Structure and magnetic properties of Mn-doped ZnO thin films

Synthesis, Structural and Optical Properties of Mo-Doped ZnO Thin Films

Lattice location and thermal stability of implanted Fe in ZnO

Contact Info

Product

Resources

About