Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates

Abstract

Mn4N is a compound magnetic material that can be grown using MBE while exhibiting several desirable magnetic properties such as strong perpendicular magnetic anisotropy, low saturation magnetization, large domain size, and record high domain wall velocities. In addition to its potential for spintronic applications exploiting spin orbit torque with epitaxial topological insulator/ferromagnet bilayers, the possibility of integrating Mn4N seamlessly with the wide bandgap semiconductors GaN and SiC provides a pathway to merge logic, memory and communication components. We report a comparative study of MBE grown Mn4N thin films on four crystalline substrates: cubic MgO, and hexagonal GaN, SiC and sapphire. Under similar growth conditions, the Mn4N film is found to grow single crystalline on MgO and SiC, polycrystalline on GaN, and amorphous on sapphire. The magnetic properties vary on the substrates and correlate to the structural properties. Interestingly, the field dependent anomalous Hall resistance of Mn4N on GaN shows different behavior from other substrates such as a flipped sign of the anomalous Hall resistance.

Progress in ferrimagnetic Mn4N films and its heterostructures for spintronics applications

“…The AHE of Mn 4 N films on semiconductors substrates have also been reported [61]. Figures 15(a)-(d) show the anomalous Hall resistance of all the films.…”

“…The epitaxial growth of Mn 4 N films on SiC implies the potential for the application with wide bandgap semiconductors. In 2020, Zhang et al reported the structure and magnetic properties of Mn 4 N films on MgO, SiC, GaN and sapphire [61]. The crystal quality of Mn 4 N films was observed by RHEED.…”

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

“…Instead of (001) orientation, 111-oriented films can be grown on various substrates, such as 6H-SiC [232] and GaN. [233][234][235] Judging from the nanoelectron-beam diffraction patterns, the superlattice structure of antiperovskite-type Mn 4 N crystal is evident, even when using a MgO(111) substrate. [236] Noncollinear magnetic structures are favored in the 111-oriented Mn 4 N films, efficient STT and/or SOT-induced magnetization switching can be expected for bilayer systems in accordance with previous work.…”

Microstructure, magnetic and electronic transport properties of reactively facing-target sputtered epitaxial Mn4N films

“…Recently, the strong correlation between magnetic anisotropy and inplane strain has been confirmed by growing Mn 4 N films on different substrates [32]. Besides, the structure and magnetic properties of Mn 4 N films on semiconductor grown by MBE have also been reported [33]. However, the magnetic and electronic transport properties of Mn 4 N films influenced by film thickness and temperature have remained confusing.…”