Magnetic properties of <i>n</i>-GaMnN thin films

Thaler, G. T.; Overberg, M. E.; Gila, B. P.; Frazier, R. M.; Abernathy, C. R.; Pearton, S. J.; Lee, J. S.; Lee, S. Y.; Park, Y. D.; Khim, Z. G.; Kim, J.; Ren, F.

doi:10.1063/1.1481533

Cited by 344 publications

(223 citation statements)

References 24 publications

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“…New excitement cames with the synthesis of ferromagnetic (Ga,Mn)N [6,7,8,9] with T c well above room temperature. High T c in this material was somehow expected after the predictions of Dietl et al [10], who calculated the magnetic properties of various semiconductors incorporating Mn, and concluded that wide gap semiconductors might offer better possibility for high T c .…”

Section: Introductionmentioning

confidence: 99%

Different origins of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N

2004

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The mechanism for the ferromagnetic order of (Ga,Mn)As and (Ga,Mn)N is extensively studied over a vast range of Mn concentrations. We calculate the electronic structures of these materials using density functional theory in both the local spin density approximation and the LDA+U scheme, that we have now implemented in the code SIESTA. For (Ga,Mn)As, the LDA+U approach leads to a hole mediated picture of the ferromagnetism, with an exchange constant N β= -2.8 eV. This is smaller than that obtained with LSDA, which overestimates the exchange coupling between Mn ions and the As p holes. In contrast, the ferromagnetism in wurtzite (Ga,Mn)N is caused by the double-exchange mechanism, since a hole of strong d character is found at the Fermi level in both the LSDA and the LDA+U approaches. In this case the coupling between the Mn ions decays rapidly with the Mn-Mn separation. This suggests a two phases picture of the ferromagnetic order in (Ga,Mn)N, with a robust ferromagnetic phase at large Mn concentration coexisting with a diluted weak ferromagnetic phase.

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Section: Introductionmentioning

confidence: 99%

Different origins of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N

2004

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“…However, it is difficult to synthesis of DMS having high Curie temperature at or above room temperature. Several materials have been reported to exhibit ferromagnetism in semiconductors based on IV [1], II-VI [2,3,4], and III-V [5,6,7] compounds. As a new DMS, vanadium-doped ZnSe is theoretically predicted to exhibit ferromagnetism at or above room temperature without carrier doping [8].…”

Section: Introductionmentioning

confidence: 99%

Crystal growth of vanadium-doped ZnSe using triethoxyvanadyl by metal-organic vapor phase epitaxy

Tahashi

Goto

et al. 2008

IEICE Electron. Express

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Abstract:As a new diluted magnetic semiconductor, vanadiumdoped ZnSe is theoretically predicted to induce ferromagnetism above room temperature without carrier doping. Vanadium-doped ZnSe was epitaxially grown on (100) GaAs substrate by metal-organic vapor phase epitaxial method in an atmospheric pressure. As a dopant source of vanadium, triethoxyvanadyl was used. The influences of molar supply ratio of dimethylzinc to dimethylselenide on crystallinity were investigated in order to research the optimum vanadium-doping condition. The crystal growth condition of vanadium-doped ZnSe changed from epitaxial growth to polycrystal growth at molar supply ratio between 1.2 and 1.5.

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“…In samples of Ga 1−x Mn x As with selective p−doping [12] it was reported a Curie temperature T c ∼ 172K. Today it is possible to make semiconductors that are ferromagnetic at room temperature [4][5][6][7]. Several spintronic devices like spin valves, spin filters, polarizers and analyzers have been made using heterostructures including DMS [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Transport properties of a Ga1-xMn xAs/Ga1-yAl yAs double-barrier

Ritter¹,

Makler²,

Lima³

2006

Braz. J. Phys.

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We study the transport properties of a spin filter consisting of a double-barrier resonant tunneling device in which the well is made of a semimagnetic material. Even if the device could be made of several materials, we discuss here the case of a Ga 1−x Mn x As/Ga 1−y Al y As system because it can be integrated into the well known AlAs/GaAs technology. We solve the Hamiltonianrepresent the kinetic energy, the double-barrier profile, the applied bias, the magnetic interaction, the holeimpurity attraction and the hole-hole repulsion, respectively. A very simple one-dimensional Green function is introduced to solve self-consistently the Poisson equation for the profile due to the charge distribution. A real space renormalization formalism is used to calculate exactly the currents. In a previous work we have shown that the Rashba effect is weak. Therefore the results show very well defined spin-polarized currents. Our results confirm that this system is a good device for spintronics.

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Magnetic properties of n-GaMnN thin films

Cited by 344 publications

References 24 publications

Different origins of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N

Different origins of the ferromagnetic order in (Ga,Mn)As and (Ga,Mn)N

Crystal growth of vanadium-doped ZnSe using triethoxyvanadyl by metal-organic vapor phase epitaxy

Transport properties of a Ga1-xMn xAs/Ga1-yAl yAs double-barrier

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