Magnetic Properties of Dy Thin Films Grown on Al2O3 Substrates with Different Crystallographic Orientations

Influence of Dimensional Effects on the Curie Temperature of Dy and Ho Thin Films

“…Thus, the prepared structures are model systems, which can be used to study the influence of dimensional effects on the magnetic structure of thin rare-earth films in the absence of epitaxial strains. Figures 2 and 3 show the temperature dependences of the magnetization of Dy and Ho and literature data for bulk crystals [17,19]. It should be noted that, above the Curie temperature of Dy and temperature of phase transition to the conic phase of Ho crystals, the behavior of the magnetization of thin films slightly differs from that of bulk crystals, and, in particular, the Néel temperatures are sufficiently close.…”

“…Al [17], are realized, and the complete relaxation of the crystal lattices of Nb and rare-earths occurs. Thus, the prepared structures are model systems, which can be used to study the influence of dimensional effects on the magnetic structure of thin rare-earth films in the absence of epitaxial strains.…”

“…Typical growth rates did not exceed 1 monolayer/min; this favored the epitaxial growth in a thermodynamically equilibrium mode [15,16] RE (RE = Dy, Ho) are realized, which were not observed previously, and epitaxial stresses in the rare-earth films are not induced. In the present study, we investigate the magnetic structure of Dy and Ho films 200 nm thick, which were grown according to the protocol [17]; it is assumed that the effect of epitaxial stresses on the magnetic structure is absent.…”

Tuning Epitaxial Growth of Nb on MgO(100)

“…[6][7][8] Niobium is also known to be a strong hydrogen absorber with a rich phase diagram depending on temperature, pressure, film thickness, and structural quality. [9][10][11][12][13] Epitaxial Nb films are often used as a buffer layer for controllable growth of rare-earth films, [14,15] exchange biased, [16] and GMR systems. [17] Thus, the controlled growth of niobium films with a given crystal orientation and high quality of the layer and surface is an important task for many areas of science and technology.…”