Magnetic properties of CrSBr

Göser, O.; Paul, W.; Kahle, H. G.

doi:10.1016/0304-8853(90)90689-n

Cited by 76 publications

(111 citation statements)

References 3 publications

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“…The sharpness of the AF–FP transition along the b ‐axis confirms that it is the magnetic easy axis. [ 25 ] The saturation magnetic fields determined from the magnetization curves correlate well with H S extracted from the magnetoresistance data for each field direction. From the combined magnetotransport and magnetization measurements, we conclude that the electrical properties of CrSBr are strongly coupled to the magnetic order; the observed magnetotransport properties are a direct result of the layered antiferromagnetic structure of CrSBr.…”

Section: Figurementioning

confidence: 67%

“…Along the b ‐axis, M sharply transitions from zero to the saturation magnetization, typical of a first order AF–FP spin‐flip transition (Figure 4B). [ 25,37 ] The M versus B curves along the a ‐ and c ‐axes (in‐plane intermediate and out‐of‐plane hard magnetic axes, respectively) exhibit a continuous increase of M from zero to the saturation magnetization, indicating that the spins are progressively canting to align with B (Figure 4A,C). The sharpness of the AF–FP transition along the b ‐axis confirms that it is the magnetic easy axis.…”

Section: Figurementioning

confidence: 99%

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Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

et al. 2020

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The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air‐stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, TN = 132 ± 1 K, CrSBr adopts an A‐type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is ΔE = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin‐based electronics.

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Section: Figurementioning

confidence: 67%

Section: Figurementioning

confidence: 99%

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

et al. 2020

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“…1c), which is an air-stable vdW semiconductor (bandgap of ~1.5 eV; see Supplementary Section 18 for transport measurements) with an interlayer AFM ordering up to a relatively high Néel temperature of T N ≈ 132 K (refs. [34][35][36][37] ). Furthermore, the antiferromagnetism promises ultrafast operations and robustness against external magnetic fields 38 and also is expected to be tunable by a gate electric field 35,39 .…”

Section: Electrical and Thermal Generation Of Spin Currents By Magnet...mentioning

confidence: 99%

Electrical and thermal generation of spin currents by magnetic bilayer graphene

et al. 2021

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“…[2,4] In this report, we demonstrate a versatile approach to engineer the structural landscape and the related spin textures in layered vdW magnets with singleatom precision. We conduct our study on the recently rediscovered vdW layered magnet CrSBr [31][32][33][34] that constitutes an ideal candidate due to its known amenability for intrinsic structural changes [32] and its highly promising electronic, optical and magnetic properties. [31][32][33][34][35][36][37] CrSBr is an air-stable ferromagnetic (FM) insulator in the monolayer limit with a direct band gap of ∼ 1.6 eV [33][34][35] hosting tightly bound magneto-excitons.…”

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confidence: 99%

“…We conduct our study on the recently rediscovered vdW layered magnet CrSBr [31][32][33][34] that constitutes an ideal candidate due to its known amenability for intrinsic structural changes [32] and its highly promising electronic, optical and magnetic properties. [31][32][33][34][35][36][37] CrSBr is an air-stable ferromagnetic (FM) insulator in the monolayer limit with a direct band gap of ∼ 1.6 eV [33][34][35] hosting tightly bound magneto-excitons. [37] The magnetic easy axis is in-plane with an antiferromagnetic (AFM) interlayer coupling in the bulk with a Néel temperature of T N = 132 K [32,36] and a recently suggested intermediate soft magnetic phase up to 160 K. [35] The combination of these properties and the crystal stability makes CrSBr ideal for nanoscale structural modification, and hence the creation of spin textures with atomic resolution, a key requirement for building advanced spintronic and magneto-electric devices.…”

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confidence: 99%

Atomistic spin textures on-demand in the van der Waals layered magnet CrSBr

Klein¹,

Pham²,

Thomsen³

et al. 2021

Preprint

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Controlling magnetism in low dimensional materials is essential for designing devices that have feature sizes comparable to several critical length scales that exploit functional spin textures, allowing the realization of low-power spintronic and magneto-electric hardware. [1] Unlike conventional covalently-bonded bulk materials, van der Waals (vdW)-bonded layered magnets [2-4] offer exceptional degrees of freedom for engineering spin textures. [5] However, their structural instability has hindered microscopic studies and manipulations. Here, we demonstrate nanoscale structural control in the layered magnet CrSBr creating novel spin textures down to the atomic scale. We show that it is possible to drive a local structural phase transformation using an electron beam that locally exchanges the bondings in different directions, effectively creating regions that have vertical vdW layers embedded within the horizontally vdW bonded exfoliated flakes. We calculate that the newly formed 2D structure is ferromagnetically ordered in-plane with an energy gap in the visible spectrum, and weak antiferromagnetism between the planes. Our study lays the groundwork for designing and studying novel spin textures and related quantum magnetic phases down to singleatom sensitivity, potentially to create on-demand spin Hamiltonians probing fundamental concepts in physics, [6-10] and for realizing high-performance spintronic, magneto-electric and topological devices with nanometer feature sizes. [11,12]

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Magnetic properties of CrSBr

Cited by 76 publications

References 3 publications

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Electrical and thermal generation of spin currents by magnetic bilayer graphene

Atomistic spin textures on-demand in the van der Waals layered magnet CrSBr

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