Magnetic Properties and Magnetoresistance of Nanocrystalline Fe-Based Films with High Electrical Resistivity.

康男, 早川; 直也, 長谷川; 彰宏, 牧野; 誠司, 三谷; 啓安, 藤森

doi:10.3379/jmsjmag.20.425

Cited by 10 publications

(7 citation statements)

References 10 publications

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“…The electromagnetic results discussed here are qualitatively the same as those reported for many oxide systems reported previously [8][9][10][11][12]. One major difference is the value of resistivity.…”

Section: -2 Magnetic and Electronic Properties Of Fe-srf 2 Filmssupporting

confidence: 79%

“…In ferromagnetic metal (FM)-insulator granular films, networks of magnetic tunnel junctions are formed. Thus, the TMR effect due to spin-dependent tunneling between neighboring FM dots has been intensively studied [8][9][10][11][12][13][14][15]. It is easy to produce such small metallic particles at granular systems.…”

Section: Introductionmentioning

confidence: 99%

“…To further develop functional ferromagnetic SET devices (SEDs) such as a three-terminal ferromagnetic single-electron transistor, exploration of insulating materials used in granular films is thought to be helpful. However, the materials reported so far are mainly oxides [8][9][10][11][12]16]. Fluorides having high resistivity due to the wider band gap and smaller dielectric constants than MgO and Al 2 O 3 are other possible candidates [20], but reports on FM-fluoride granular films have been rare [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Structural and electromagnetic characterizations of Fe–SrF₂granular films

Hosoya¹,

Arita²,

Hamada³

et al. 2006

J. Phys. D: Appl. Phys.

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Abstract.We investigate composite Fe-SrF 2 films to explore new materials showing the granular type tunneling magnetoresistance (TMR) effect. The films are composed of Fe nano-particles embedded in a SrF 2 matrix. The electromagnetic properties of the ferromagnetic metal-insulator films are confirmed, including super-paramagnetism, tunnel conduction, and TMR. We obtain a TMR of 3% at RT and 5% at 77 K. The film resistivity is much higher than that of oxide-based granular film. We also fabricate the nanostructures of granular films and aim at the application of the single-electron transistor. As a result, we observed Coulomb blockade (CB) region and CB oscillation at low temperature.

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Section: -2 Magnetic and Electronic Properties Of Fe-srf 2 Filmssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural and electromagnetic characterizations of Fe–SrF₂granular films

Hosoya¹,

Arita²,

Hamada³

et al. 2006

J. Phys. D: Appl. Phys.

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“…Several granular systems have been studied, for example CoSiO 2 , 3 FeSiO 2 , 4,5 CoAl 2 O 3 , [6][7][8] and FeHfO. 9 Among these materials there is particular interest in FeHfO not only for its magnetoresistance but also for its soft magnetic properties. [10][11][12] In this article we report on the observed TMR in reactive sputter deposited FeHfO and FeHfSiO thin films.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

Strijkers

Swagten

Rulkens

et al. 1998

Journal of Applied Physics

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We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe 47 Hf 10 O 43 and Fe 40 Hf 6 Si 6 O 48 , respectively. The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only. We propose that spin-flip scattering in the amorphous FeHf͑Si͒O matrix causes this decrease as function of temperature. A two current model for the tunnel magnetoresistance, taking into account spin-flip scattering, is presented which can describe the observed temperature dependence of the magnetoresistance.

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“…In other words, the GMR cannot appear particularly in a material with high electrical resistivity. However, a pronounced GMR can be observed in some insulating granular films [3][4][5] and is believed to be based on the mechanism of spin-dependent tunnelling, therefore, the giant magnetoresistance in this case can be also called tunnelling magnetoresistance (TMR). The GMR has a closely relationship with chemical composition [6], measuring temperature [7], annealing conditions [8] or the substrate temperature.…”

mentioning

confidence: 99%

Giant magnetoresistance and microstructure of FeCo–Al ₂ O ₃ nanogranular films

Wang

Guo

Rong

et al. 2004

phys. stat. sol. (c)

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The giant magnetoresistance (GMR) and microstructure of FeCo-Al 2 O 3 films sputtered at various substrate temperatures (T s ) were investigated. The results indicate that the GMR of as-sputtered FeCo(41 vol.%)-Al 2 O 3 granular films reaches the peak value of 6.9%, while for FeCo-Al 2 O 3 granular films sputtered at 473 K, the dependence of GMR on volume fraction (f v ) displays 6% peak value with lower content about 35 vol.% FeCo. Based on the features of GMR of FeCo-Al 2 O 3 granular films sputtered at different f v and T s , an optimum factor A(D c /L c ) is introduced to explain qualitatively the influence of spin-dependent interface scattering(D) and tunneling barrier's thickness(L) related to f v and Ts on GMR. The phase separation of hcp α-Co from bcc α-Fe (Co) was revealed by analytical electron microscopy and its effect on GMR for different f v and T s was discussed. 1 Introduction Since the discovery of the giant magnetoresistance (GMR) in granular films [1,2], this phenomenon has been extensively studied due to its potential application in information industry. The GMR effect originates from spin-dependent scattering of conducting electrons at the interfaces between the ferromagnetic granules and the non-magnetic matrix, and within the ferromagnetic granules. Therefore, the GMR effect occurred easily in a system of ferromagnetic granule -non-ferromagnetic metal matrix in which the electronic mean free path and spin diffusion length are relatively long. In other words, the GMR cannot appear particularly in a material with high electrical resistivity. However, a pronounced GMR can be observed in some insulating granular films [3][4][5] and is believed to be based on the mechanism of spin-dependent tunnelling, therefore, the giant magnetoresistance in this case can be also called tunnelling magnetoresistance (TMR). The GMR has a closely relationship with chemical composition [6], measuring temperature [7], annealing conditions [8] or the substrate temperature. In this paper, we will investigate the effect of the composition and substrate temperature accompanying with microstructure on the GMR in FeCo-Al 2 O 3 granular films.

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Magnetic Properties and Magnetoresistance of Nanocrystalline Fe-Based Films with High Electrical Resistivity.

Cited by 10 publications

References 10 publications

Structural and electromagnetic characterizations of Fe–SrF₂granular films

Structural and electromagnetic characterizations of Fe–SrF₂granular films

Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

Giant magnetoresistance and microstructure of FeCo–Al ₂ O ₃ nanogranular films

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Magnetic Properties and Magnetoresistance of Nanocrystalline Fe-Based Films with High Electrical Resistivity.

Cited by 10 publications

References 10 publications

Structural and electromagnetic characterizations of Fe–SrF2granular films

Structural and electromagnetic characterizations of Fe–SrF2granular films

Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

Giant magnetoresistance and microstructure of FeCo–Al 2 O 3 nanogranular films

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Product

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Structural and electromagnetic characterizations of Fe–SrF₂granular films

Structural and electromagnetic characterizations of Fe–SrF₂granular films

Giant magnetoresistance and microstructure of FeCo–Al ₂ O ₃ nanogranular films