Magnetic phase transitions, metastable states, and magnetic hysteresis in the antiferromagnetic compounds 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Fe</mml:mi><mml:msub><mml:mrow /><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub><mml:mi>TiS</mml:mi><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn><mml:mo>−</mml:mo><mml:mi>y</mml:mi></mml:mrow></mml:msub><mml:mi>Se</mml:mi><mml:msub><mml:mrow /><mml:mi>y</mml:mi></mml:msub></mml:mrow></mml:math>

Баранов, Н. В.; Selezneva, N. V.; Sherokalova, E. M.; Baglaeva, Y. A.; Овчинников, А. С.; Tereshchenko, A. A.; Gorbunov, D. I.; Волегов, А. С.; Шерстобитов, А. А.

doi:10.1103/physrevb.100.024430

Cited by 15 publications

(2 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The absence of any field‐induced enhancement in magnetization at higher field hints of a magnetization switching process between the two locally minimum energy FM configurations. AFM material with high Néel temperature tends to exhibit paramagnetic behavior at higher field (see Figure , Supporting Information), [ 40 ] which is not the case here. Rather, the bulk magnetization saturates to a modest value of 0.67 × 10 −7 A m 2 at T = 350 K, which is comparable to the uncompensated FM moment for the measured sample.…”

Section: Resultsmentioning

confidence: 86%

NiSi: A New Venue for Antiferromagnetic Spintronics

Ghosh

Guo

et al. 2023

Advanced Materials

View full text Add to dashboard Cite

Envisaging antiferromagnetic spintronics pivots on two key criteria of high transition temperature and tuning of underlying magnetic order using straightforward application of magnetic field or electric current. Here, it is shown that NiSi metal can provide suitable new platform in this quest. First, the study unveils high‐temperature antiferromagnetism in single‐crystal NiSi with Néel temperature, TN ⩾ 700 K. Antiferromagnetic order in NiSi is accompanied by non‐centrosymmetric magnetic character with small ferromagnetic component in the a–c plane. Second, it is found that NiSi manifests distinct magnetic and electronic hysteresis responses to field applications due to the disparity in two moment directions. While magnetic hysteresis is characterized by one‐step switching between ferromagnetic states of uncompensated moment, electronic behavior is ascribed to metamagnetic switching phenomena between non‐collinear spin configurations. Importantly, the switching behaviors persist to high temperature. The properties underscore the importance of NiSi in the pursuit of antiferromagnetic spintronics.

show abstract

Section: Resultsmentioning

confidence: 86%

NiSi: A New Venue for Antiferromagnetic Spintronics

Ghosh

Guo

et al. 2023

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…The magnetic hysteresis, while more common in ferromagnetic materials, is also often seen in antiferromagnetic materials. [38][39][40] Moreover, the magnetic hysteresis exhibits a relatively large coercive field (≈0.45T) and a small remnant magnetization (0.05 µ B f.u. -1 ), which is in accordance with those observed in other magnetic systems with short-range order.…”

Section: Magnetic Propertiesmentioning

confidence: 99%

High‐Throughput Screening Assisted Discovery of a Stable Layered Anti‐Ferromagnetic Semiconductor: CdFeP₂Se₆

Kothakonda

Zhu

Guan

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

Recent advances in 2D magnetism have heightened interest in layered magnetic materials due to their potential for spintronics. In particular, layered semiconducting antiferromagnets exhibit intriguing low‐dimensional semiconducting behavior with both charge and spin as carrier controls. However, synthesis of these compounds is challenging and remains rare. Here, first‐principles based high‐throughput search is conducted to screen potentially stable mixed metal phosphorous trichalcogenides (MM′P2X6, where M and M′ are transition metals and X is a chalcogenide) that have a wide range of tunable bandgaps and interesting magnetic properties. Among the potential candidates, a stable semiconducting layered magnetic material, CdFeP2Se6, that exhibits a short‐range antiferromagnetic order at TN = 21 K with an indirect bandgap of 2.23 eV is successfully synthesized . This work suggests that high‐throughput screening assisted synthesis can be an effective method for layered magnetic materials discovery.

show abstract

Microscopic information provided by transport measurements

Sousa

Ventura

Pereira

2021

Transport Phenomena in Micro- And Nanoscale Functional Materials and Devices

View full text Add to dashboard Cite

Magnetic phase transitions, metastable states, and magnetic hysteresis in the antiferromagnetic compounds Fe0.5TiS2−ySey

Cited by 15 publications

References 50 publications

NiSi: A New Venue for Antiferromagnetic Spintronics

NiSi: A New Venue for Antiferromagnetic Spintronics

High‐Throughput Screening Assisted Discovery of a Stable Layered Anti‐Ferromagnetic Semiconductor: CdFeP₂Se₆

Microscopic information provided by transport measurements

Contact Info

Product

Resources

About

Magnetic phase transitions, metastable states, and magnetic hysteresis in the antiferromagnetic compounds Fe0.5TiS2−ySey

Cited by 15 publications

References 50 publications

NiSi: A New Venue for Antiferromagnetic Spintronics

NiSi: A New Venue for Antiferromagnetic Spintronics

High‐Throughput Screening Assisted Discovery of a Stable Layered Anti‐Ferromagnetic Semiconductor: CdFeP2Se6

Microscopic information provided by transport measurements

Contact Info

Product

Resources

About

High‐Throughput Screening Assisted Discovery of a Stable Layered Anti‐Ferromagnetic Semiconductor: CdFeP₂Se₆