1969
DOI: 10.1109/tmag.1969.1066642
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Magnetic oxide films

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Cited by 119 publications
(25 citation statements)
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“…At the same time, NiFe 2 O 4 was found to be a highly reproducible humidity [4] and gas [5,6] sensor material. The numerous techniques, such as ferrite plating [7,8], oxidation of metallic films [9], arc plasma method [10], chemical transport [11,12], chemica1 vapor deposition [13][14][15][16], the dip coating process [17], spray pyrolysis [18,19], and pulsed wire discharge [20] have been used for preparation of the NiFe 2 O 4 films. The main difficulty of these methods is the limit in the choice of substrate material, since it must be kept at a high temperature after deposition.…”
Section: Introductionmentioning
confidence: 99%
“…At the same time, NiFe 2 O 4 was found to be a highly reproducible humidity [4] and gas [5,6] sensor material. The numerous techniques, such as ferrite plating [7,8], oxidation of metallic films [9], arc plasma method [10], chemical transport [11,12], chemica1 vapor deposition [13][14][15][16], the dip coating process [17], spray pyrolysis [18,19], and pulsed wire discharge [20] have been used for preparation of the NiFe 2 O 4 films. The main difficulty of these methods is the limit in the choice of substrate material, since it must be kept at a high temperature after deposition.…”
Section: Introductionmentioning
confidence: 99%
“…Early work ($1960 s) investigated the use of solid metal halide precursors, but the high temperature (>700 8C) required to vaporize these precursors and the formation of corrosive hydrogen halides hampered further development. [10,11] More volatile metal acetylacetonate precursors, (Ni(acac) 2 and Fe(acac) 3 ), have also been utilized in subsequent studies, [13,26] however using traditional vaporization methods (bubbler or crucible), accurate control of vapor concentrations for the two components in order to obtain stoichiometric films is difficult, often resulting in unwanted impurity phases such as Fe 2 O 3 or NiO. [13] Precursor oligomerization (e.g.,…”
Section: Full Papermentioning
confidence: 99%
“…MgAl 2 O 4 (100) and MgO (100) substrates with cubic normal spinel (a ¼ 0.808 nm) and fcc (2a ¼ 0.842 nm) structure, respectively, are used for film growth due to their close lattice match with nickel ferrite (lattice mismatch of 3% and 1%, respectively). [10,21,22] 2. Results and Discussion…”
Section: Full Papermentioning
confidence: 99%
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“…At the same time, NiFe 2 O 4 was found to be a highly reproducible humidity [70] and gas [71,72] sensor material. Numerous techniques, such as ferrite plating [73,74], oxidation of metallic films [75], arc plasma method [76], chemical transport [77,78], chemical vapor deposition [79][80][81][82], the dip coating process [83], spray pyrolysis [84,85], and pulsed wire discharge [86], have been used for the preparation of NiFe 2 O 4 films. The main difficulty of these methods is the limit in the choice of substrate material, since it must be kept at a high temperature after deposition.…”
mentioning
confidence: 99%