Abstract:The dynamic ͑ac͒ conductivity tensor of quantum wells with two populated subbands in the presence of a magnetic field perpendicular to the well layer is calculated theoretically. The microscopic theory is based on the Kubo formalism assuming a detailed consideration of elastic scattering of electrons by the random disorder potential with arbitrary correlation length. The results describe the influence of magnetic field on the linear absorption of low-frequency electromagnetic radiation, and demonstrate the exi… Show more
“…Finally a cross comparison of QPMR and classical magnetoresistance in perpendicular magnetic fields shows good mutual agreement with the quantitative theory 14,25,30 and indicates the dominant contribution of the intersubband impurity scattering to the electron transport. An analysis of the MISO amplitude shows significantly less effect of the scattering between subbands, which destroys the overall agreement with theory.…”
Section: Introductionmentioning
confidence: 68%
“…13,14 At even higher magnetic fields (hω c > kT , corresponding to B ⊥ >0.4 Tesla at T=4.2K) there are SdH oscillations (not shown). In this paper we focus on the low magnetic field (high temperature) regime:hω c ≪ kT , where SdH oscillations are absent.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 1 presents dependences of the dissipative resistance of 2D electrons on the perpendicular magnetic field, B ⊥ , taken at different angles α between the direction of the total magnetic field, B, and the normal to the 2D layer. At α=0 degree and B ⊥ <0.025 T the magnetoresistance demonstrates a small increase related to classical magnetoresistance 14,26,[29][30][31] . At a higher magnetic field the magnetoresistance slowly increases oscillating at B ⊥ >0.07 T. These oscillations are MISO.…”
Section: Methodsmentioning
confidence: 99%
“…QPMR is in some respect similar to MISO and reflects the enhancement of the intra-subband impurity scattering due to the quantization of the electron spectrum. 13,14,25 QPMR has been observed in electron systems with two populated subbands 26 and in narrow (13nm) quantum wells with a single subband populated. 27 The later is recently investigated in tilted magnetic fields.…”
Section: Introductionmentioning
confidence: 99%
“…[5][6][7][8][9][10] These magneto-inter-subband oscillations (MISO) of the resistance are due to an alignment between Landau levels from different subbands i and j with corresponding energies E i and E j . Resistance maxima occur at magnetic fields at which the gap between the bottoms of subbands, ∆ ij = E i − E j , equals a multiple of the Landau level spacing,hω c : ∆ ij = k ·hω c , where k is an integer [11][12][13][14] . At this condition electron elastic scattering on impurities is enhanced due to the possibility of electron transitions between the aligned quantum levels of i th and j th subbands.…”
Transport properties of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands placed in titled magnetic fields are studied at high temperatures. Quantum positive magnetoresistance (QPMR) and magneto-intersubbands resistance oscillations (MISO) are observed in quantizing magnetic fields, B ⊥ , applied perpendicular to the 2D layer. QPMR displays contributions from electrons with considerably different quantum lifetimes, τ (1,2) q , confirming the presence of two subbands in the studied system. MISO evolution with B ⊥ agrees with the obtained quantum scattering times only if an additional reduction of the MISO magnitude is applied at small magnetic fields. This indicates the presence of a yet unknown mechanism leading to MISO damping. Application of in-plane magnetic field produces a strong decrease of both QPMR and MISO magnitude. The reduction of QPMR is explained by spin splitting of Landau levels indicating g-factor, g ≈0.4, which is considerably less than the g-factor found in GaAs quantum well with a single subband populated. In contrast to QPMR the decrease of MISO magnitude is largely related to the in-plane magnetic field induced entanglement between quantum levels in different subbands that, in addition, increases the MISO period.
“…Finally a cross comparison of QPMR and classical magnetoresistance in perpendicular magnetic fields shows good mutual agreement with the quantitative theory 14,25,30 and indicates the dominant contribution of the intersubband impurity scattering to the electron transport. An analysis of the MISO amplitude shows significantly less effect of the scattering between subbands, which destroys the overall agreement with theory.…”
Section: Introductionmentioning
confidence: 68%
“…13,14 At even higher magnetic fields (hω c > kT , corresponding to B ⊥ >0.4 Tesla at T=4.2K) there are SdH oscillations (not shown). In this paper we focus on the low magnetic field (high temperature) regime:hω c ≪ kT , where SdH oscillations are absent.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 1 presents dependences of the dissipative resistance of 2D electrons on the perpendicular magnetic field, B ⊥ , taken at different angles α between the direction of the total magnetic field, B, and the normal to the 2D layer. At α=0 degree and B ⊥ <0.025 T the magnetoresistance demonstrates a small increase related to classical magnetoresistance 14,26,[29][30][31] . At a higher magnetic field the magnetoresistance slowly increases oscillating at B ⊥ >0.07 T. These oscillations are MISO.…”
Section: Methodsmentioning
confidence: 99%
“…QPMR is in some respect similar to MISO and reflects the enhancement of the intra-subband impurity scattering due to the quantization of the electron spectrum. 13,14,25 QPMR has been observed in electron systems with two populated subbands 26 and in narrow (13nm) quantum wells with a single subband populated. 27 The later is recently investigated in tilted magnetic fields.…”
Section: Introductionmentioning
confidence: 99%
“…[5][6][7][8][9][10] These magneto-inter-subband oscillations (MISO) of the resistance are due to an alignment between Landau levels from different subbands i and j with corresponding energies E i and E j . Resistance maxima occur at magnetic fields at which the gap between the bottoms of subbands, ∆ ij = E i − E j , equals a multiple of the Landau level spacing,hω c : ∆ ij = k ·hω c , where k is an integer [11][12][13][14] . At this condition electron elastic scattering on impurities is enhanced due to the possibility of electron transitions between the aligned quantum levels of i th and j th subbands.…”
Transport properties of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands placed in titled magnetic fields are studied at high temperatures. Quantum positive magnetoresistance (QPMR) and magneto-intersubbands resistance oscillations (MISO) are observed in quantizing magnetic fields, B ⊥ , applied perpendicular to the 2D layer. QPMR displays contributions from electrons with considerably different quantum lifetimes, τ (1,2) q , confirming the presence of two subbands in the studied system. MISO evolution with B ⊥ agrees with the obtained quantum scattering times only if an additional reduction of the MISO magnitude is applied at small magnetic fields. This indicates the presence of a yet unknown mechanism leading to MISO damping. Application of in-plane magnetic field produces a strong decrease of both QPMR and MISO magnitude. The reduction of QPMR is explained by spin splitting of Landau levels indicating g-factor, g ≈0.4, which is considerably less than the g-factor found in GaAs quantum well with a single subband populated. In contrast to QPMR the decrease of MISO magnitude is largely related to the in-plane magnetic field induced entanglement between quantum levels in different subbands that, in addition, increases the MISO period.
In addition to the photo-excited zero-resistance states and radiation-induced magnetoresistance oscillations, which can be observed in the high-quality GaAs/AlGaAs two-dimensional electron system (2DES), magnetotransport studies of this 2DES also exhibit interesting dark magnetoresistance effects. Here, a narrow negative magnetoresistance (MR) effect that appears around zero field, and spans over about À0.02 T B 0.02 T is examined. This experimental work aims to study the influence of microwave (MW) photoexcitation on this narrow negative-MR effect in high-mobility GaAs/AlGaAs 2DES. Experimental data exhibit that the observed negative magnetoresistance effect disappears with increasing MW power. For example, the change in magnetoresistance (ΔR xx ) due to the narrow negative-MR effect drops by %50% upon increasing the source power up to about 8 mW. Further analysis shows that the zero-field resistance monotonically increases with increasing the power, suggesting that electron heating due to the energy absorbed from the radiation field accounts for the observed quenching of the narrow negative-MR effect.
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