†Electronic supplementary information (ESI) available: Schematic diagram of method shearing two dimensional porous graphene sheet into different kind of nanoribbons; PDOS of two-probe device of 3-Benzo-CMP, BN-3-Benzo-CMP and BN-p-3ZGNR(w=4) at 0.0 and 2.0 V bias voltage; I-V b curves of BN-p-3AGNR(w=2), BN-p-4AGNR(w=2), BN-p-5AGNR(w=2), BN-p-4ZGNR(w=4) and BN-p-5ZGNR(w=4).Abstract We investigate the electronic and electron transport properties of a series of 2D porous n-Benzo-CMPs (CMP refers to π-conjugated microporous polymers) sheets with different pore size n and their boron-nitride (BN) codoped derivatives, BN-n-Benzo-CMPs, as well as one-dimensional (1D) porous graphene nanoribbons (p-GNRs) tailored from n-Benzo-CMPs and BN-n-Benzo-CMPs using density-functional theory (DFT) and the non-equilibrium Green's function (NEGF) methods.We find that the n-Benzo-CMPs and BN-n-Benzo-CMPs (n = 3, 4, 5) sheets are all semiconductors with direct band gaps (0.57 -1.75 eV). Their band gap decreases with increasing the pore size n. In addition, the 1D armchair and zigzag P-GNRs tailored from 2D n-Benzo-CMPs and BN-n-Benzo-CMPs (n = 3, 4, 5) sheets are all semiconductor with the band gaps ranging from 0.19 to 2.0 eV. BN codoping, pore size (n), and the width of nanoribbons (w) can all be used to tune the band gap of either 2D porous graphenes or their corresponding 1D p-GNRs. Computed current-voltage (I-V b ) curves are consistent with the semiconducting properties and suggest that both BN-3-Benzo-CMP and BN-p-3ZGNR (w = 4) can be exploited for applications in low-dimensional electronics.