Magnetic instability induced by Rh doping in the Kondo semiconductor CeRu<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>10</mml:mn></mml:msub></mml:math>

Guo, Hanjie; Tanida, Hiroshi; Kobayashi, Riki; Kawasaki, Ikuo; Sera, Masafumi; Nishioka, Takashi; Matsumura, Masatoshi; Watanabe, Isao; Xu, Zhu-An

doi:10.1103/physrevb.88.115206

Cited by 33 publications

(25 citation statements)

References 30 publications

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“…(2) is the Kubo-Toyabe term, which accounts for the dip seen in the µ + SR spectra near 5.5 µs even in the magnetically ordered state, indicating that the internal field seen by the muons on this site is smaller than that of the nuclear field. This suggests that the corresponding muon site can be assigned to the 4a crystallographic position [27].…”

Section: Muon Spin Relaxationmentioning

confidence: 94%

Contrasting carrier doping effects in the Kondo insulatorCeOs2Al10: The influential role ofc−fhybridization in spin-gap formation

et al. 2014

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The effects of electron (Ir) and hole (Re) doping on the hybridization gap and antiferromagnetic order have been studied by magnetization, muon spin relaxation (µ + SR), and inelastic neutron scattering on the polycrystalline samples of Ce(Os1−xIrx)2Al10 (x = 0.08 and 0.15) and CeOs1.94Re0.06Al10. µ + SR spectra clearly reveals magnetic ordering below 20 and 10 K for x = 0.08 and 0.15 samples respectively with a very weak signature of oscillations of the muon initial asymmetry at very short time scale. Our important findings are that small amount of electron doping (i) completely suppress the inelastic magnetic excitations near 11 meV down to 2K, which were observed in the undoped compound, and the response transforms into a broad quasielastic response and (ii) the internal field at the corresponding muon site is remarkably enhanced by about ten times compared with the parent compound. On the other hand with small amount of hole (3% Re) doping the intensity of the inelastic magnetic excitations near 11 meV is reduced significantly. The main origin of the observed doping effect is an extra 5d electrons being carried by Ir and a hole carried by Re compared with that the Os atom. The obtained results demonstrate a great sensitivity of the carrier doping and provides additional ways to study their anomalous magnetic properties.

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Section: Muon Spin Relaxationmentioning

confidence: 94%

Contrasting carrier doping effects in the Kondo insulatorCeOs2Al10: The influential role ofc−fhybridization in spin-gap formation

et al. 2014

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“…Furthermore, m AF is easily rotated from c to b or from c to a axis by a small magnetic field, a small amount of Ce-or Ru-site substitution and pressure, etc. [27][28][29][30][31][32][33][34][35][36][37][38][39][40]. (5) The spin gap and also charge gap appear in the AFM-ordered phase, whose origin has not yet been clarified [6,[40][41][42][43][44][45][46][47][48][49][50][51][52][53].…”

Section: Introductionmentioning

confidence: 99%

Pr- and La-doping effects on the magnetic anisotropy in the antiferromagnetic phase of Kondo semiconductorCeRu2Al10

et al. 2015

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We have studied the Pr-and La-doping effects on the magnetic anisotropy in the antiferro-magnetic (AFM) phase of CeRu 2 Al 10 . The crystalline electric field (CEF) splitting in PrRu 2 Al 10 was found to be as large as ∼800 K with a singlet ground state. In Ce 1−x Pr x Ru 2 Al 10 , the CEF level scheme of the Pr ion is not changed with x. The AFM moment (m AF ) is rotated from c to b axis in both systems at x sr c ∼ 0.03 and ∼0.07 for Ln=Pr and La, respectively. As the ionic radius of La and Pr is larger and smaller than that of Ce, respectively, these results indicate that the chemical pressure effect is not associated with the rotation of m AF , but is caused by the suppression of the c-f hybridization originating from the decrease of 4f electrons of Ce ions by Ce-site substitution. Since a small amount of Pr or La doping changes easily the magnetization easy axis of all the moments on Ce sites, the origin of the magnetic anisotropy is not the local single ion effect but the bandlike effect through the anisotropic c-f hybridization. The magnetic phase diagrams of Ce 1−x Ln x Ru 2 Al 10 indicate that above x sr c , the AFM order with m AF b continues to exist up to x c , which is ∼0.4 and ∼0.6 in Ln=Pr and Ln=La, respectively. This indicates that even in the sample with an AFM transition temperature (T 0 ) near x c , the anisotropic c-f hybridization dominates the AFM order. A large positive transverse magnetoresistance is seen below T 0 , but a very small one above T 0 . Together with the results of Hall resistivity and the observation of Shubnikov-de Haas oscillation, we propose that there exist large Fermi surfaces above T 0 and small ones below T 0 . A gap is opened by the AFM order on almost the area of the large Fermi surface, and small Fermi surfaces are constructed below T 0 , although we do not know the mechanism, which might be specific to the AFM order in Kondo semiconductors. The largest suppression of the magnetic scattering below T 0 is observed for the current I a and the smallest one for I b. This anisotropy may be associated with the anisotropic c-f hybridization, which may contribute to the anisotropic magnetic scattering of the conduction electron below T 0 .

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“…11 Recently Guo et al 28 have investigated Ce(Ru 1−x Rh x ) 2 Al 10 (x = 0−0.08) series using muon spin relaxation and their dipolar fields calculation supports the 4c position, while for the 4a one, these authors found almost zero internal field.…”

Section: 1112mentioning

confidence: 99%

Magnetic ordering with reduced cerium moments in hole-doped CeOs2Al10

et al. 2014

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The lightly hole-doped system CeOs1.94Re0.06Al10 has been studied by muon spin relaxation and neutron diffraction measurements. A long-range antiferromagnetic ordering of the Ce-sublattice with substantially reduced value of the magnetic moment 0.18(1)µB has been found below TN = 21 K. Similar to the undoped parent compound, the magnetic ground state of CeOs1.94Re0.06Al10 preserves the anomalous direction of the ordered moments along the c-axis. The obtained result reveals the crucial difference between electron-and hole-doping effects on the magnetic ordering in CeOs2Al10. The former suppresses the anisotropic c − f hybridization and promotes localized Ce moments. On the contrary, the latter increases the hybridization and shifts the system towards delocalized non-magnetic state.PACS numbers: 75.25.-j Unusual magnetic order in the Kondo semiconductors CeOs 2 Al 10 and CeRu 2 Al 10 with an orthorhombic cage structure has attracted much attention in last few years.1-11 The order takes place at unexpectedly high temperature T N ∼ 29 K if one takes into account the large separation distance (∼ 5.2Å) between Ce ions in the structure and involvement of a very small ordered moment ∼ 0.3 -0.4µ B along the c-crystallographic direction 9,12,13 which is not the easy axis in the static susceptibility measurements above the transition temperature. In addition, a spin gap formation takes place at a temperature slightly higher T N in these materials as well as in the paramagnetic state of CeFe 2 Al 10 .7,11,14,15 The latter does not show any sign of magnetic order and the Ce ions in this compound are believed to be in the valence fluctuating regime. The mechanism providing the high ordering temperature and the gap formation has not been clarified yet. Based on optical conductivity measurements, Kimura et al.16 suggested a charge density wave as the primary instability which then induces the unusual magnetic ordering at T N . An indirect confirmation of this idea is the presence of the structural modulation with the (0, − 2 3 , 2 3 ) propagation vector revealed by electron diffraction in CeOs 2 Al 10 at 15 K.3 The critical temperature where this modulation comes in was not clarified and later X-ray and neutron diffraction measurements failed to find evidence of the symmetry lowering below and above T N . 9,11,12The reduced ordered moment found in the neutron diffraction experiments has been attributed by Strigari et al. 17,18 to the crystal field effects studied by polarizationdependent soft x-ray absorption measurements. The proposed ground state wave function provides quantitative agreement with the experimental data and has been confirmed by inelastic neutron scattering.19 The nature of the strongly anisotropic exchange parameters stabilizing the ordered state with the moments being along the caxis is however unclear so far.Very recently, a great sensitivity of CeRu 2 Al 10 and CeOs 2 Al 10 to electron-doping has been revealed. [20][21][22] In both compounds a small substitution with 4d and 5d transition metals carrying e...

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Magnetic instability induced by Rh doping in the Kondo semiconductor CeRu2Al10

Cited by 33 publications

References 30 publications

Contrasting carrier doping effects in the Kondo insulatorCeOs2Al10: The influential role ofc−fhybridization in spin-gap formation

Contrasting carrier doping effects in the Kondo insulatorCeOs2Al10: The influential role ofc−fhybridization in spin-gap formation

Pr- and La-doping effects on the magnetic anisotropy in the antiferromagnetic phase of Kondo semiconductorCeRu2Al10

Magnetic ordering with reduced cerium moments in hole-doped CeOs2Al10

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