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2021
DOI: 10.1016/j.apcatb.2021.120513
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Magnetic heterojunction of oxygen-deficient Ti3+-TiO2 and Ar-Fe2O3 derived from metal-organic frameworks for efficient peroxydisulfate (PDS) photo-activation

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Cited by 76 publications
(17 citation statements)
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“…To further confirm the previously reported energy-level positions, we carried out the M–S measurements (Figure S8) to determine the CB minimum and then calculate the VB maximum via subtracting the CB minimum with band gaps. As shown in Figure S8, the flat band potentials of ZnIn 2 S 4 and TiO 2 NtPs were determined to be −1.2 and −0.2 V (vs RHE), respectively, by extending the linear part of their corresponding M–S plots, which are close to the reported values. The M–S plots of both ZnIn 2 S 4 and TiO 2 NtPs show a positive slope, suggesting that they are n-type semiconductors. It is known that the CB edge of an n-type semiconductor is about 0.2 V negative than the flat band potential; ,, the CB edge of ZnIn 2 S 4 and TiO 2 NtPs were thus estimated to be −1.4 and −0.4 V (vs RHE), and their VB edges were calculated to be 1.0 and 2.9 V (vs RHE), respectively.…”
Section: Results and Discussionsupporting
confidence: 75%
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“…To further confirm the previously reported energy-level positions, we carried out the M–S measurements (Figure S8) to determine the CB minimum and then calculate the VB maximum via subtracting the CB minimum with band gaps. As shown in Figure S8, the flat band potentials of ZnIn 2 S 4 and TiO 2 NtPs were determined to be −1.2 and −0.2 V (vs RHE), respectively, by extending the linear part of their corresponding M–S plots, which are close to the reported values. The M–S plots of both ZnIn 2 S 4 and TiO 2 NtPs show a positive slope, suggesting that they are n-type semiconductors. It is known that the CB edge of an n-type semiconductor is about 0.2 V negative than the flat band potential; ,, the CB edge of ZnIn 2 S 4 and TiO 2 NtPs were thus estimated to be −1.4 and −0.4 V (vs RHE), and their VB edges were calculated to be 1.0 and 2.9 V (vs RHE), respectively.…”
Section: Results and Discussionsupporting
confidence: 75%
“…52−55 The M−S plots of both ZnIn 2 S 4 and TiO 2 NtPs show a positive slope, suggesting that they are n-type semiconductors. It is known that the CB edge of an n-type semiconductor is about 0.2 V negative than the flat band potential; 52,55,56 the CB edge of ZnIn 2 S 4 and TiO 2 NtPs were thus estimated to be −1.4 and −0.4 V (vs RHE), and their VB edges were calculated to be 1.0 and 2.9 V (vs RHE), respectively. These values are thus close to the reported ones.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 4f shows indirect band gaps of 3.27, 2.98, and 2.83 eV for TiO 2 , Cu 30 /TiO 2 , and De-Cu 30 / TiO 2 , respectively. 50,51 Apparently, the band gap of De-Cu 30 / TiO 2 is the smallest among all the samples, and the narrow band gap is essential for the absorption of visible light. This property is also consistent with the fact that its ability to remove Hg 0 by visible light is significantly better than that of the other two samples.…”
Section: Methodsmentioning
confidence: 99%
“…On the other hand, there are studies 19,28,34−36 that conclude that a type II heterojunction is created, where electrons formed under visible light in Fe 2 O 3 can be transferred to the CB of TiO 2 . 39 However, there are also reports 4, 29,37,38 in which it is accepted that although the TiO 2 @Fe 2 O 3 composite forms type I heterojunctions, it behaves favorably with respect to electron transfer. It is claimed that in CB Fed 2 Od 3 , higher levels exist to which the electrons can be transported.…”
Section: Introductionmentioning
confidence: 99%
“…Formation of a type I heterojunction, where the conduction band (CB) edge of TiO 2 is above the CB of Fe 2 O 3 and the valence band (VB) edge of TiO 2 is below that of Fe 2 O 3 , has been proposed. , However, in this case, the photoelectrons and photoholes generated in TiO 2 upon UV radiation would transfer to the conduction and valence bands of Fe 2 O 3 , respectively, with no improvement toward suppression of the charge recombination. On the other hand, there are studies ,, that conclude that a type II heterojunction is created, where electrons formed under visible light in Fe 2 O 3 can be transferred to the CB of TiO 2 . However, there are also reports ,,, in which it is accepted that although the TiO 2 @Fe 2 O 3 composite forms type I heterojunctions, it behaves favorably with respect to electron transfer.…”
Section: Introductionmentioning
confidence: 99%