Magnetic FinFET (MAGFinFET)

Pamonchom, Chanvit; Nakachai, Rattapong; Sutthinet, Chalin; Poyai, Amporn

doi:10.1109/ecti-con47248.2019.8955228

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…Current channels are induced on the sides and top of the fins, providing a lower subthreshold swing (SS) than conventional standard planar MOSFETs, eliminating problems with short channel effect [2][3][4]. This structure was applied to detect the vertical magnetic field called MAG-FinFET (Magnetic FinFET) based on MAG-FET (Magnetic FET) operation [5]. The device structure is nanometer scale and can be fabricated together with modern integrated circuit technology.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Carrier Deflection between MAG-TFET and MAG-FinFET

Boonlua

Poyai

Phetchakul

2023

MSF

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This paper is a comparison of the carrier deflection mechanism of a new magnetic sensor structure between the tunneling Field Effect Transistor (TFET) structure and the FinFET structures so-called MAG-TFET and MAG-FinFET.The device relies on carrier deflection from magnetically induced forces. The MAG-TFET current is caused by electron tunneling and drifting through the bulk under gate while the MAG-FinFET current is caused by the drift channel carrier from the inversion layer induced by gate voltages and there is also a bulk current beneath the substrate. The carrier deflection of the device is due to the current in the induced channel and current in the bulk. From the results, carrier deflection in the induced channel is better than in the bulk. The device sensitivity depends on the proportion of these two currents.

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