Magnetic Film Devices Using Passive Loading

Abstract

Computer solutions of a pair of differential equations based on the Landau-Lifshitz model indicate that with passive loading, magnetic film devices may be used as storage and logical elements in digital computers. Experimental models of a flipflop consisting of an R-C-L loaded film device show that successive 20-oe,0.1-μsec drive field pulses can switch the magnetization in the film alternately from one rest orientation to the other with repetition rates of the drive on the order of 106 pps. A nondestructive readout memory element consisting of an R-L loaded thin film device is shown which allows films with Hk on the order of 3 oe to be driven in the hard direction by 15-oe, 0.05-μsec field pulses without destroying the stored information,resulting in output voltages of about 25 mv per winding turn. Fabrication by evaporation techniques of a memory employing such elements is discussed.

Energy transfer properties of thin magnetic film logical elements

“…For a 10 rail wide, 1/2 mil thick conductor, the calculated value of this time constant is 37.4 nanoseconds. 4. If coupling lines are fabricated by conventional printed-circuit techniques, implying conductor thickness on the order of 1 mil, the domi nant field affecting film switching contributed by the coupling lines will be the inductive trapped-flux field.…”