Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range

Djuzhev, N. A.; Mazurkin, N. S.; Pozdnyakov, Vladislav S.; Iurov, Aleksey; Chinenkov, M. Yu.

doi:10.1134/s1063782615130060

Cited by 8 publications

(4 citation statements)

References 4 publications

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“…Among the magnetic sensing devices developed, magnetic sensors based on the AMR effect are widely used due to their high sensitivity, large temperature range, low power consumption, and low cost [10][11][12]. The AMR effect is caused by the anisotropic scattering of 4s electrons in the exchanged split 3D orbitals [13].…”

Section: Sensing Devicementioning

confidence: 99%

Design of a Novel Magnetic Induction Switch with a Permalloy Film and a Trans-Impedance Amplifier Circuit

Zhang,

Jiang,

Jiang

2023

Inventions

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At present, magnetic induction switches are widely used in industrial automation control and biological sensing systems. A core module composed of a magnetic sensing device and a signal conditioning circuit is designed and analyzed in this paper. Utilizing a permalloy film with the anisotropic magneto-resistance (AMR) effect, the novel magnetic induction switch shows its ability to correctly detect the direction of magnetic fields. Furthermore, an interfacial circuit based on a trans-impedance amplifier (TIA) is designed to measure and regulate the output signal of the sensing device. Accurate simulation results show the gain of the TIA reaches up to 51.36 dB with a bandwidth of 1.3 GHz and a power consumption of 3.65 mW. The outstanding performance of the proposed module demonstrates the possibility of solving the problems induced by high input impedance, high frequency, and parasitic effects in magnetic induction switches.

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Section: Sensing Devicementioning

confidence: 99%

Design of a Novel Magnetic Induction Switch with a Permalloy Film and a Trans-Impedance Amplifier Circuit

Zhang,

Jiang,

Jiang

2023

Inventions

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“…Samples with magnetic and non-magnetic layers of a given shape were formed by using photolithography operations. The array of usual and self-aligned structures with the same topological dimensions was manufactured [7][8][9]: the width of the magnetic strip is 10 µm, the distance between shunt strips is 6 µm, the width of the shunt strips is 6 µm. The transfer functions were obtained and the sensitivity was calculated (Fig.…”

Section: Defect and Diffusion Forum Vol 386mentioning

confidence: 99%

Magnetic Field MEMS-Sensor: Functional Characteristics Control during the Formation of Magnetosensitive Structures

Djuzhev

Iurov

Chinenkov

2018

DDF

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In this work the results of substrate temperature effects on coercivity and magnetoresistance in ferromagnetic structures are shown. It was found that with an increase of the substrate temperature from 270 to 390 °C the magnetoresistance increases from 1.2 to 2.3% and the coercive force from 1.6 to 5.3 Oe. A new topology of anisotropic magnetoresistive structures is proposed. In these structures the shape of ferromagnetic elements repeats the shape of nonmagnetic conducting shunts. Sensitivity values obtained for both types of magnetic structures are compared.

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“…AMR decreases with decreasing thickness when the film thickness is small [22]. The output of the permalloy film is nonlinear near zero field, while the convenient linear part is on either side of the zero field [23]. Therefore, researchers have conducted studies on the internal structure, fabrication process, and other aspects of the sensor to optimize the performance of AMR sensors.…”

Section: Introductionmentioning

confidence: 99%

A high-sensitive anisotropic magnetoresistive sensor based on hybrid Ta/NiFe/Ta/Al multilayer structure

Zhuo,

Liu,

Feng

et al. 2024

Meas. Sci. Technol.

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High sensitivity is crucial for anisotropic magnetoresistive (AMR) sensors in industrial applications. In this paper, a high- sensitive AMR sensor based on magnetoresistive thin films with Ta/NiFe/Ta/Al four-layer structure is proposed and fabricated. Firstly, the structural parameters were optimized by finite element analysis. Secondly, thin film samples and AMR sensors were prepared. Through the analysis and characterization of reluctance change rate, hysteresis loop, X-ray diffraction and surface morphology and structure, the process parameters were optimized. Finally, the sensor was connected to the designed external circuit, and its technical parameters were tested in a magnetic field test system. The results show that the prepared AMR sensor performs well. It has a high sensitivity of 1.27 mV/V/Oe, a low bridge offset voltage of ±1.64 mV/V, and a low temperature coefficient of sensitivity of -0.102 %/℃. The results contribute to the future development of AMR magnetic field sensor chips.

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Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range

Cited by 8 publications

References 4 publications

Design of a Novel Magnetic Induction Switch with a Permalloy Film and a Trans-Impedance Amplifier Circuit

Design of a Novel Magnetic Induction Switch with a Permalloy Film and a Trans-Impedance Amplifier Circuit

Magnetic Field MEMS-Sensor: Functional Characteristics Control during the Formation of Magnetosensitive Structures

A high-sensitive anisotropic magnetoresistive sensor based on hybrid Ta/NiFe/Ta/Al multilayer structure

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