Magnetic field meter based on giant magnetoimpedance effect

Kuźmiński, M.; Nesteruk, K.; Lachowicz, H.K.

doi:10.1016/j.sna.2007.08.012

Cited by 28 publications

(12 citation statements)

References 34 publications

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“…This effect is promising due to its possible application in the development of the highly sensitive magnetic-field sensors [4][5][6]. And it has been widely studied in Co-based amorphous wires or ribbons with slightly negative magnetostriction, and a circumferential (in the case of a wire) or transverse anisotropy (in the case of a ribbon) is often formed by tensile stress annealing or transverse magnetic field annealing to realize a large OMI effect [7][8][9].…”

Section: Effect (Gmi);mentioning

confidence: 99%

Design and characteristic analysis of giant magnetoimpedance sensor in Fe-based nanocrystalline ribbons

Chai

Gan

2011

Proceedings of 2011 International Conference on Electronics and Optoelectronics

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Section: Effect (Gmi);mentioning

confidence: 99%

Design and characteristic analysis of giant magnetoimpedance sensor in Fe-based nanocrystalline ribbons

Chai

Gan

2011

Proceedings of 2011 International Conference on Electronics and Optoelectronics

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“…Although the prevailing magnetic sensors are Hall elements with a sensitivity of several millivolts per oersted or MR sensors, in addition GMR (Giant Magneto Resistive Effect) sensors [1][2][3], MI (Magneto-Impedance) effect sensors [4,5], and flux gate magnetic sensors [6][7][8] have also been developed for high-sensitivity applications. Major applications include closure detection in mobile phones or personal computers, motor control for home appliances, and crank angle detection for automotive engines, where a variety of sensor specifications are required.…”

Section: Introductionmentioning

confidence: 99%

“…Among them, comparatively high sensitivity is required for geomagnetic sensors or magnetic sensors used in torque sensors with a magnetostrictive ring. Although the prevailing magnetic sensors are Hall elements with a sensitivity of several millivolts per oersted or MR sensors, in addition GMR (Giant Magneto Resistive Effect) sensors [1][2][3], MI (Magneto-Impedance) effect sensors [4,5], and flux gate magnetic sensors [6][7][8] have also been developed for high-sensitivity applications. Compared to GMR or MI sensors, stacked-layer magnetic sensors with magnetostrictive and piezoelectric layers are attracting much attention for their high sensitivity (several tens to several hundreds of millivolts per oersted) and wide dynamic range, together with their improved temperature characteristics.…”

Section: Introductionmentioning

confidence: 99%

Cantilever‐Type FePd/PZT Stacked‐Layer Magnetic Sensors with High Sensitivity

Saito

Hamashima

Saito³

et al. 2013

Elect Comm in Japan

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FePd/PZT/FePd and FePd/PZT stacked-layer magnetic sensors were studied. A magnetic field was applied to the longitudinal direction of the sensor to cause longitudinal stress magnetostrictively, producing a piezoelectric output voltage in the PZT layer. The prototype sensors were 15 mm long and 6 mm wide and the thicknesses of the FePd layer and PZT layer were 10 and 330 µm, respectively. The theoretical sensitivities of the FePd/PZT/FePd sensor and the FePd/PZT sensor using a simple cantilever model were calculated to be 0.29 and 0.15 mV/A/m, respectively. The measured sensitivities agreed reasonably well with the calculated ones.

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“…It is a phenomenon that the AC impedance of materials changes sensitively with the variation of an external DC magnetic field. The GMI effect has become an attractive topic [2][3][4] because the various high performance magnetic sensors and high density magnetic recording heads developed based on this effect have extensive application potentials in the intelligent examination, biomolecule detection, autocontrol, etc. The GMI effect is mainly related to the changes in skin effect and permeability with magnetic field [2].…”

Section: Introductionmentioning

confidence: 99%

Giant magnetoimpedance effect of multilayered structure (F/SiO2)3/Ag/(SiO2/F)3 films deposited in a longitudinal magnetic field

Chen

Xian-Yi

Feng

et al. 2010

Sci. China Ser. E-Technol. Sci.

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The soft magnetic properties and giant magnetoimpedance (GMI) effect of the multilayered structure (F/SiO 2 ) 3 /Ag/(SiO 2 /F) 3 (F≡Fe 71.5 Cu 1 Cr 2.5 V 4 Si 12 B 9 ) films, which were prepared by radio frequency sputtering without and with a longitudinal magnetic field of about 72 kA/m, are studied. The results show that the GMI effect almost cannot be detected in the samples deposited without field, whereas, a longitudinal magnetic field applied during deposition process obviously optimizes the soft magnetic properties of the films, and noticeable GMI effect is obtained. The maximum values of the longitudinal and transverse GMI ratios are 45% and 44% at the frequency of 6.81 MHz, respectively. In addition, the dependence of magnetoimpedance ratio, magnetoresistance ratio, magnetoreactance ratio and effective permeability ratio on the frequency has been investigated. We found that the GMI spectrum curves in the longitudinal and transverse cases almost overlap for the field-deposited sample. The GMI effect is mainly a giant magnetoinductive effect at low frequencies. When f >9 MHz, magnetoreactance ratio changes to a negative, i.e., the property of reactance changes from inductive to capacitive.Fe-based soft magnetic alloy, as-deposited multilayered films, giant magnetoimpedance effect, effective permeability, magnetic anisotropy Citation:Chen W P, Shao X Y, Feng S S, et al. Giant magnetoimpedance effect of multilayered structure (F/SiO 2 ) 3 /Ag/(SiO 2 /F) 3 films deposited in a longitudinal magnetic field.

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Magnetic field meter based on giant magnetoimpedance effect

Cited by 28 publications

References 34 publications

Design and characteristic analysis of giant magnetoimpedance sensor in Fe-based nanocrystalline ribbons

Design and characteristic analysis of giant magnetoimpedance sensor in Fe-based nanocrystalline ribbons

Cantilever‐Type FePd/PZT Stacked‐Layer Magnetic Sensors with High Sensitivity

Giant magnetoimpedance effect of multilayered structure (F/SiO2)3/Ag/(SiO2/F)3 films deposited in a longitudinal magnetic field

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