Magnetic‐Field‐Induced Localization of Electrons in Fluctuation Potential Wells of Impurities

Аронзон, Б. А.; Tsidilkovskii, I. M.

doi:10.1002/pssb.2221570102

Cited by 20 publications

(17 citation statements)

References 33 publications

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“…t $ 1 in a larger B-field range, where we consequently observe Shubnikov -de Haas oscillations. The transition to the EQL, as calculated from the development of the DOS in magnetic field, is marked [4]. At this field, we observe a kneelike structure in r xy in agreement with earlier results [2,3].…”

supporting

confidence: 91%

“…The EQL regime in three-dimensional systems (3DES) has been investigated for over 40 years [1], but several observations are still not understood. The generally observed decrease of the Hall constant in the magnetic field region above the EQL transition, but well below the metal-insulator transition, has been interpreted most controversially as a consequence of a Hall insulating state [2], as a precursor to magnetic freeze-out [3], and with the help of a two-band model, where part of the electrons form droplets in large scale potential fluctuations [4]. Obviously, the proposed models contradict each other with respect to their local density of states (LDOS).…”

mentioning

confidence: 99%

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Local Density of States of a Three-Dimensional Conductor in the Extreme Quantum Limit

et al. 2001

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The electronic structure of the narrow gap semiconductor InAs is investigated by scanning tunneling spectroscopy and magnetotransport measurements in the extreme quantum limit. The well-known oscillations of the Hall coefficient are reproduced and the last, most pronounced oscillation is shown to be correlated with the appearance of corrugations in the local density of states. While the increasing part of the Hall constant corresponds to the existence of isolated patterns indicating magnetic field induced localization, the decreasing part correlates with the development of a network which most likely consists of one-dimensional channels. We conclude that the decrease of the Hall constant in the extreme quantum limit is caused by a transition from a purely three-dimensional to a partly one-dimensional transport regime.

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confidence: 91%

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confidence: 99%

Local Density of States of a Three-Dimensional Conductor in the Extreme Quantum Limit

et al. 2001

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“…This discrepancy between the measured and predicted values of B EQL can be explained within the picture of electron puddles, since the typical concentration n p of electrons within puddles in the EQL is markedly different from the volume-averaged electron concentration n . Indeed, in the EQL the typical concentration of electrons within puddles takes a value that is independent of the volume-averaged electron concentration 55 57 :…”

Section: Discussionmentioning

confidence: 99%

Spatially inhomogeneous electron state deep in the extreme quantum limit of strontium titanate

et al. 2016

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When an electronic system is subjected to a sufficiently strong magnetic field that the cyclotron energy is much larger than the Fermi energy, the system enters the extreme quantum limit (EQL) and becomes susceptible to a number of instabilities. Bringing a three-dimensional electronic system deeply into the EQL can be difficult however, since it requires a small Fermi energy, large magnetic field, and low disorder. Here we present an experimental study of the EQL in lightly-doped single crystals of strontium titanate. Our experiments probe deeply into the regime where theory has long predicted an interaction-driven charge density wave or Wigner crystal state. A number of interesting features arise in the transport in this regime, including a striking re-entrant nonlinearity in the current–voltage characteristics. We discuss these features in the context of possible correlated electron states, and present an alternative picture based on magnetic-field induced puddling of electrons.

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“…A strong magnetic field dependence of the resistivity is usually connected with the phenomenon of localization. It Seems plausible to consider two types of localization: freeze-out on shallow donors [8,12] and localization on potential fluctuations [19]. However, freeze-out itself does not disturb impact ionization [12], merely shifting the threshold electric field to compensate for an increase of the electron-donor binding energy.…”

Section: Magnetic Field Induced Localizationmentioning

confidence: 99%

Magnetic Field Induced Localization in Semiinsulating GaAs

1992

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Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium temperature in magnetic field up to 6 T. During the measurements the samples were persistently illuminated with infrared light which allowed to populate with electrons a part of shallow donor and conduction band states. Current-voltage characteristics showed an abrupt jump of the current at a threshold electric field which is interpreted as a result of impact ionization of electrons bound on shallow donors and in the tail of the bottom of the conduction band. The jump of the current decreases as the magnetic field increases and disappears for a sufficiently high magnetic field. B0. The value of B0 grows with growing light intensity. These results are explained by magnetic-field induced localization of electrons on long-range fluctuations of the electrostatic potential. The localization transition was confirmed by the current dependence on temperature measured at different magnetic fields. A peak on these curves was observed. Its position coincides with the temperature above which impact ionization is not observed. A possible mechanism explaining appearance of the peak is presented.

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Magnetic‐Field‐Induced Localization of Electrons in Fluctuation Potential Wells of Impurities

Cited by 20 publications

References 33 publications

Local Density of States of a Three-Dimensional Conductor in the Extreme Quantum Limit

Local Density of States of a Three-Dimensional Conductor in the Extreme Quantum Limit

Spatially inhomogeneous electron state deep in the extreme quantum limit of strontium titanate

Magnetic Field Induced Localization in Semiinsulating GaAs

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